29APR2003 Search Results

Contextual Info: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of page-erasable Flash memory

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

code lock circuit flow chart

Abstract: M28W320ECB M28W320ECT M28W320
Contextual Info: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

A8A21

Abstract: 8849h
Contextual Info: M28W640ECT M28W640ECB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ ACCESS TIME: 70, 85, 90,100ns

VA22

Abstract: A0-A21 M59PW1282 640000h-65FFFFh
Contextual Info: M59PW1282 128Mbit two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product FEATURES SUMMARY • MASK-ROM PIN-OUT COMPATIBLE ■ TWO 64 Mbit LightFlash™ MEMORIES STACKED IN A SINGLE PACKAGE ■ SUPPLY VOLTAGE Figure 1. Package – VCC = 2.7 to 3.6V for Read

M45PE10

Contextual Info: M45PE10 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1-Mbit of page-erasable Flash memory

Contextual Info: M45PE10 1 Mbit, page-erasable serial Flash memory with byte-alterability and 75 MHz SPI bus interface Features SPI bus compatible serial interface 75 MHz clock rate maximum 2.7 V to 3.6 V single supply voltage 1 Mbit of page-erasable Flash memory Page size: 256 bytes

GR-253-CORE

Abstract: M2006-04 M2006-11 automatic phase selector circuit diagram
Contextual Info: Integrated Circuit Systems, Inc. Preliminary Information M2006-04 VCSO BASED FREQUENCY TRANSLATOR GENERAL DESCRIPTION PIN ASSIGNMENT 9 x 9 mm SMT 27 26 25 24 23 22 21 20 19 nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC The M2006-04 is a VCSO (Voltage Controlled SAW

Contextual Info: M59PW1282 128Mbit two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE TWO 64 Mbit LightFlash™ MEMORIES STACKED IN A SINGLE PACKAGE

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ACCESS TIME – 80ns at VCC = 3.0 to 3.6V

VA22 6 pin

Abstract: AI05447 VA22 A0-A21 M27W128
Contextual Info: M27W1282 128 Mbit two 64 Mbit, x16, FlexibleROM 3V Supply, Multiple Memory Product FEATURES SUMMARY • ONE TIME PROGRAMMABLE Figure 1. Packages ■ TWO 64 Mbit FlexibleROM™ MEMORIES STACKED IN A SINGLE PACKAGE ■ SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read

M45PE10

Abstract: ST10
Contextual Info: M45PE10 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

VA22

Abstract: A0-A21 VA22 6 pin
Contextual Info: M27W1282 128 Mbit two 64 Mbit, x16, FlexibleROM 3V Supply, Multiple Memory Product FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ TWO 64 Mbit FlexibleROM™ MEMORIES STACKED IN A SINGLE PACKAGE ■ SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7 to 3.6V for Read

Contextual Info: M59PW1282 128Mbit two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product FEATURES SUMMARY • MASK-ROM PIN-OUT COMPATIBLE ■ TWO 64 Mbit LightFlash™ MEMORIES STACKED IN A SINGLE PACKAGE ■ SUPPLY VOLTAGE Figure 1. Package – VCC = 2.7 to 3.6V for Read

M45PE10

Contextual Info: M45PE10 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1 Mbit of Page-Erasable Flash memory

A0-A21

Abstract: M28W640ECB M28W640ECT TFBGA48 8849h
Contextual Info: M28W640ECT M28W640ECB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)

CR10

Abstract: M58LW032C TSOP56
Contextual Info: M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations ■ – VDDQ = 1.8 to VDD for I/O Buffers

TC0640

Abstract: TC072
Contextual Info: LITE-ON SEMICONDUCTOR TC0640H thru TC4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400

A0-A21

Abstract: M28W640ECB M28W640ECT TFBGA48
Contextual Info: M28W640ECT M28W640ECB 64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional)

Contextual Info: M45PE10 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: M69AW024B 16 Mbit 1M x16 3V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ ACCESS TIME: 60ns, 70ns ■ LOW STANDBY CURRENT: 70µA ■ DEEP POWER DOWN CURRENT: 10µA ■ LOW VCC DATA RETENTION: 2.3V COMPATIBLE WITH STANDARD LPSRAM

VDFPN8

Abstract: stmicroelectronics Serial Flash Memory Device M45PE10 ST10
Contextual Info: M45PE10 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)

sn 5551

Abstract: CR10 J-STD-020B M58LW032C TSOP56
Contextual Info: M58LW032C 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION LOC A LL RIGHTS RESERVED. 200 3 DIST 50 AF BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DESCRIPTION REV PER 0G3A— 0761 — 03 1 CONTINUOUS 2 D 2 > û ON WIRES [.0 0 00 15] - #18 0.51 MIN