29APR1 Search Results
29APR1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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WE 3831Contextual Info: P U B L IC A T IO N RIGHTS 2006 LOC RESERVED. D I ST REV A around c IO N S D ESC RIPTIO N LTR A4 I S DATE 29APR11 REVISED PER ECO-11-005294 DWN APV D RK HMR 1. 5 c 12 1 1 73.4 927 374-7 L O 3 927 3740 L O 3 927 3740 ZD ZD 3 L L 927 3740 3 v O 3 YELLOW 1 1 |
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eco-11-00529429apr1112jul198309aug1983+3 | |
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Contextual Info: THIS DRAWING IS UNPUBLISHED. C O R Y RI G H T RELEASED FOR ALL BY PUBLICATION RIGHTS 20 LOC REV I S IONS D IST FT RESERVED. LTR B1 DESCRIPTION DATE REVISED PER ECO-11-005294 29APR11 DWN APVD RK HMR - POLAR I ZAT I ON KEY S L OT - CAV I TY FOR M2 . 5 F I X I NG SCREW |
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eco-11-00529494-vo29apr11-284539-i | |
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Contextual Info: THIS DRAWING C O P Y R I G HT IS UNPUBLISHED. RELEASED AL L BY FOR PUBLICATION RIGHTS LOC D I ST REV I S I O N S FT RESERVED. LTR DE SC R I P T I O N E1 R E V IS E D P E R E C O -1 1-005027 D WN DATE 29APR11 RK APVD HMR LATCH I DENT I E I E R B-BREAKAWAY LATCH V E R S I O N ONLY |
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eco-11-005027 | |
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Contextual Info: SiHD6N62E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.9 34 Qgs (nC) 4 Qgd (nC) 8 Configuration |
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sihd6n62e2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SiHP21N65EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET using E Series Technology • Reduced Trr, Qrr, and Irrm • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) |
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sihp21n65efo-220ab2002/95/ec2011/65/eu+2 | |
VESD05A1B-02V-GS08Contextual Info: VESD05A1B-02V Vishay Semiconductors ESD-Protection Diode in SOD-523 Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 > 20 kV contact discharge > 30 kV air discharge • Typ. capacitance 12 pF VR = 2.5 V; f = 1 MHz • Leakage current < 0.1 µA (VR = 5 V) |
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vesd05a1b-02vod-5232002/95/ec2002/96/ec+2 | |
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Contextual Info: TLHK4200 Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19222 DESCRIPTION This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package. The small |
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tlhk42002002/95/ec2002/96/ec2011/65/eu+1 | |
USB B-FEMALE
Abstract: SMD GG
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ul94-v0e323964614/629-b08-nov-11+4 | |
WERI 629105136821
Abstract: USB SMT
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ul94-v0e32396405-apr-1229-apr-11+2 | |
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Contextual Info: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: LCP COLOR: IVORY ACTUATOR MATERIAL: LCP COLOR: BLACK CONTACT MATERIAL: PHOSPOR BRONZE CONTACT PLATING: 100µ’’ TIN OVER 50µ’’ NI QUALITY CLASS: 25 MATING CYCLES* A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -25°C UP TO 85°C |
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ul94-v0100mohm250vac/mn20mohm+1 | |
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Contextual Info: SiS822DNT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sis822dntan6094429u9523u+6 | |
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Contextual Info: SiHG73N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Input Capacitance (Ciss) 0.039 • Reduced Switching and Conduction Losses |
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sihg73n60eo-247ac2002/95/ec2011/65/eu+2 | |
LNK305GN
Abstract: LNK624PG LNK364PN TOP201YN TOP256PN LNK457DG TFS758HG TOP256YN lnk305pn top249yn
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lnk305gnlnk624pglnk364pntop201yn+6 | |
BEYSCHLAG
Abstract: 28801 BEH052230634001 VSH vishay D-25746
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29-apr-10d-25746beyschlag28801+2 | |
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Sn90-Pb10
Abstract: Sn90Pb10
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sn90pb102002/95/ec3181k4247k+2 | |
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Contextual Info: TLCY610. www.vishay.com Vishay Semiconductors Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Utilizing ultrabright AllnGaP AS • High luminous intensity • High operating tempreature: Tj (chip junction |
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tlcy610jesd22-a114-btlcy612002/95/ec+3 | |
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Contextual Info: TLHB5800 www.vishay.com Vishay Semiconductors High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • GaN on SiC technology • Standard • Ø 5 mm T-1¾ package • Small mechanical tolerances • Small viewing angle • Very high intensity |
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tlhb58002002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: TLHE510., TLHG510., TLHK510. www.vishay.com Vishay Semiconductors High Intensity LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Choice of three colors • TLH.5100 for cost effective design • Medium viewing angle • Material categorization: |
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tlhe510tlhg510tlhk5102002/95/ec+3 | |
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Contextual Info: TLHB5400 www.vishay.com Vishay Semiconductors High Efficiency Blue LED, Ø 5 mm Tinted Diffused Package FEATURES • GaN on SiC technology • Standard Ø 5 mm T-1¾ package • Small mechanical tolerances • Wide viewing angle • Very high intensity • Luminous intensity categorized |
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tlhb54002002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL By C O P Y R IG H T P U B L IC A T IO N R IG H TS - - LOG REVIS IO N S D IS T RESERVED. - LTR IN IT IA L NOTE: PACKAGING ACC. TO TE SPEC. 1 0 7 - 1 8 0 3 2 BUNDLE EVERY 2 5 ASSEM BLIES WITH A RUBBER |
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28apr129apr1 | |
TLHK4200
Abstract: TLHK4200-AS12Z
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tlhk420011-mar-11tlhk4200-as12z | |
USB B-FEMALE
Abstract: GG SMD smd A4
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ul94-v0e323964614/629-b18-jun-12+6 | |
E323964Contextual Info: 1 2 3 4 5 MATERIAL: HOUSING MATERIAL: LCP COLOR: IVORY ACTUATOR MATERIAL: LCP COLOR: BLACK CONTACT MATERIAL: PHOSPOR BRONZE CONTACT PLATING: 100µ TIN OVER 50µ NI QUALITY CLASS: 25 MATING CYCLES A ENVIRONNEMENTAL: OPERATING TEMPERATURE: -25°C UP TO 85°C |
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ul94-v0100mohm250vac/mn20mohm+1 | |
108-18716
Abstract: 539635-1 1718558-1 CuNiSi 963530-1 1241374-1 114-18386 1241436
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eco-11-00515029apr11108-18716539635-1+6 | |