29MAY06 Search Results

Contextual Info: 1 L PART NUMBER I 29MAY06 ISBYl RZ I ECR-06-012830 M AX MIN 0 .9 5 0 6568388-1 1 .0 5 0 6568388-2 2 .0 5 0 1 .9 5 0 6568388-3 3 .0 5 0 2 .9 5 0 6568388-5 5 .0 8 0 4 .9 2 0 1-6568388-0 1 0.1 5 0 9 .8 5 0 W H ITE REVERSE M AR K F IB ER N O T TO PATH F IB E R

Sn97Ag3

Abstract: rv0603
Contextual Info: Vishay Sfernice CECC 40401-010 Qualified Thin Film Resistor Chip FEATURES • Nickel barrier for high temperature operating conditions Pb-free Available RoHS* COMPLIANT • Very low noise < 35 dB and voltage coefficient 0.1 ppm/V • Non-inductive • Laser trimmed down to 0.1 %

Si7100DN

Contextual Info: Si7100DN Vishay Siliconix New Product N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ) 40 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

Contextual Info: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

SI7100DN

Contextual Info: Si7100DN New Product Vishay Siliconix N-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.0035 at VGS = 4.5 V 35 0.0045 at VGS = 2.5 V 35 VDS (V) 8 Qg (Typ) 40 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

Contextual Info: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

T63XB

Contextual Info: T63 Vishay Sfernice 1/4" Multi-Turn Sealed Container Cermet Trimmers FEATURES • 0.25 Watt at 85 °C RoHS • Industrial Grade COMPLIANT • Tests according to CECC 41 000 • Multi-turn operation Due to their square shape and small size 6.8 x 6.8 x 5 mm , the

Contextual Info: VJ BX Vishay Vitramon Multilayer Ceramic Chip Capacitors FEATURES • Designed for excellent T/VCC • Temperature Voltage Coefficient T/VCC does not exceed - 25 % at rated voltage RoHS COMPLIANT • Excellent aging characteristics GENERAL SPECIFICATIONS

Contextual Info: SUR50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

Contextual Info: WSLP120 6 Key Benefits • 1-Watt power capability in very small 1206 package • Saves space by enabling use of a 1206 size package to replace 1-Watt 1508 35 % space savings , 2010 (61 % space savings) and 2512 (75 % space savings) size parts • Very low resistance values of 2 mΩ to 50 mΩ

suu50n03-7m3p

Contextual Info: SUU50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

Contextual Info: 1N4933 thru 1N4937 Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds DO-204AL DO-41

R5F21256SNFP-52P

Abstract: seiko 320 240 R5F21256SNFP
Contextual Info: R8C/24,25 29-May-06 Evaluation of Subsystem Clock Oscillation Circuit [R5F21256SNFP-52P] QFP 10x10 0.65mm pitch Measurement conditions : 3.3V Model Vcc=2.2 to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF

C40r

Abstract: SUB40N06-25L SUB40N06-25L-E3 SUP40N06-25L SUP40N06-25L-E3 SUB40N0625L *40n06-25
Contextual Info: SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 40 0.025 at VGS = 4.5 V 40 • TrenchFET Power MOSFETs • Maximum Junction Temperature:

Contextual Info: CHP, HCHP Vishay Sfernice High Stability Resistor Chips Thick Film Technology FEATURES • Robust terminations • Large ohmic value range 0.1 Ω to 100 MΩ Pb-free Available • Tight tolerance to 0.5 % RoHS* • CHP: standard passivated version for industrial,

Contextual Info: T63 Vishay Sfernice 1/4" Multi-Turn Sealed Container Cermet Trimmers FEATURES • 0.25 Watt at 85 °C RoHS • Industrial grade COMPLIANT • Tests according to CECC 41 000 • Multi-turn operation Due to their square shape and small size 6.8 x 6.8 x 5 mm , the

Multi-Effects Audio Processor

Abstract: SAM3303 ATSAM3703 delay reverb diagram schematic "pitch shifter" "pitch shifter" ic remix motor start capacitors SAM97XX 10band graphic equalizer Equalizer delay reverb
Contextual Info: Features • • • • • • • • • • • • • • • • • Three DSPs and 24-bit Audio Router On-chip 32 kHz to 96 kHz Sampling Rate Enhanced P16 Processor with C Compiler New 48-bit Double-precision DSP Instructions Built-in 16K x 16 Flash Memory

Contextual Info: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop d* e t n e Pat * Glass Encapsulation technique is covered by

1632CG

Abstract: M30260F6T-48P
Contextual Info: M16C/26T 29-May-06 Evaluation of Subsystem Clock Oscillation Circuit [M30260F6T-48P] LQFP 7x7 0.5mm pitch Measurement conditions :3.3V Model Vcc=3.0V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF

SUB40N06-25L

Abstract: SUB40N06-25L-E3 SUP40N06-25L SUP40N06-25L-E3 609-25
Contextual Info: SUP/SUB40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 40 0.025 at VGS = 4.5 V 40 • TrenchFET Power MOSFETs • Maximum Junction Temperature:

Contextual Info: SUU50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

SI4620DY

Contextual Info: Si4620DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 7.4 0.052 at VGS = 4.5 V 6.1 Qg (Typ) 4.2 nC SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage

Potentiometers and Trimmers

Abstract: PE25 Sfernice pm82A P11T potentiometer sfernice T19P sfernice Vishay Sfernice pE25 P10XX 504 pm84b vishay P11 SAP PART NUMBERING GUIDELINES pe30pe 5k
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book potentiometers and trimmers vishay vse-db0018-0609 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Si7112DN

Abstract: Si7112DN-T1 Si7112DN-T1-E3
Contextual Info: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 17.8 0.0082 at VGS = 4.5 V 17.0 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile