29APR02 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 3 RELEASED POR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - ALL RIGHTS RESERVED. REVISION' LOG DIST AF 50 LTR B DESCRIPTION DATE REVISED PER O G 6 3 - 0 0 3 1 - 0 2 DWN A PVD F KR 29APR02 1, O P O C IC IC A T IO N S '

Si2303ADS

Abstract: Si2303DS
Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

ARRAY resistor

Abstract: 6432 resistor CRCA12E CRCC1206 31044
Contextual Info: CRCA12E & S Vishay Dale Thick Film Array, Resistor / Capacitor FEATURES • Single component reduces board space and component counts • Choice of dielectric characteristics X7R or Y5U • Wrap around termination • Thick film R/C element • Inner electrode protection

fC adapter DRAWING

Abstract: 95REF
Contextual Info: 4 THIS DRAWI NG i£ L 3 15 U N P U B L I S H E D . COPYRIGHT RELEASED 19 BY AMP I NC OR P O R A T E D . FOR P U B L I C A T I O N ALL RIGHTS , 2 LOC 19 RESERVED. CE DIST 16 LTR G •mH : r e v i s i o n DESCRIPTION REVISED PER DWN DATE 0A00-0400-02 APVD J WD SB

SUM110N04-03

Contextual Info: SUM110N04-03 New Product Vishay Siliconix N-Channel 40-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0028 @ VGS = 10 V 110 a

si2302ds

Abstract: Si2302ADS Si2302DS 2A
Contextual Info: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: TOS 020016, TOS 030033 Vishay Draloric Barrel-Style Capacitors - Class 1 and 2 Ceramic TOS 020016 7.5 KVDC TOS 030033 15 KVDC Ø 30 1.187 DIA 7.0 (0.25) 9.5 (0.375) Ø 20 (0.79 DIA) 33 (1.312) 22.6 max. (0.890 max.) 16 (0.630) 48 max. (1.89 max.) 10 - 32 UNF Thread

bzx85

Abstract: BZX85 Series 88323 BZX85-B36 BZX85 1.3W ZENER B18 zener b27 BZX85C9 B20 zener diode glass BZX85-B120
Contextual Info: BZX85 Series Vishay Semiconductors formerly General Semiconductor Zener Diodes min. 1.102 28.0 max. .161 (4.1) min. 1.102 (28.0) DO-204AL (DO-41 Glass) VZ Range 3.6 to 200V Power Dissipation 1.3W e g a t l o V d e d e n g e t n Ex Ra Features max. ∅ 0.102 (2.6)

N5600

Contextual Info: TOS 020016, TOS 030033 Vishay Draloric Barrel-Style Capacitors - Class 1 and 2 Ceramic TOS 020016 7.5 KVDC TOS 030033 15 KVDC Ø 30 1.187 DIA 7.0 (0.25) 9.5 (0.375) Ø 20 (0.79 DIA) 33 (1.312) 22.6 max. (0.890 max.) 16 (0.630) 48 max. (1.89 max.) 10 - 32 UNF Thread

BZY97

Abstract: BZY97C200 GE C150 c3v9 C82 diode BZY97-C200 BZY97-C3V9 C100 10MSA C120
Contextual Info: BZY97-C3V9 thru BZY97-C200 Vishay Semiconductors formerly General Semiconductor Zener Diodes DO-204AM 1.0 25.4 MIN. VZ Range 3.9 to 200V Power Dissipation 1.5W d e d n nge e t x E e Ra g a t l Vo Features 0.110 (2.79) 0.050 (1.27) DIA. 0.205 (5.20) 0.125 (3.18)

N5600

Abstract: 15KV TOS030033
Contextual Info: TOS 020016, TOS 030033 Vishay Draloric Barrel-Style Capacitors - Class 1 and 2 Ceramic 7.5KVDC TOS 030033 15KVDC Ø 30 1.187 DIA 7.0 (0.25) 9.5 (0.375) Ø 20 (0.79 DIA) 10 - 32 UNF Thread 6.35 (0.25) depth 33 (1.312) 22.6 max. (0.890 max.) 16 (0.630) 6 - 32 UNC Thread

Si2303ADS

Abstract: Si2303DS
Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (3A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

si2301ads

Contextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Z71 sot23

Abstract: Z75 MARKING Zener Diode C3 5 z58 diode General Semiconductor b22 sod-123 Zener Diode BZx84 BZX84-C15 vishay BZX84-C5V6 BZX84-Y10
Contextual Info: BZX84 Series Vishay Semiconductors formerly General Semiconductor Zener Diodes Vz Range 2.4 to 75V Power Dissipation 300mW TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 0.031 (0.8) Dimensions in inches

Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT AMP 1471—9 REV 31MAR2ÛÛÛ RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. - - 1 2 REVISIONS LOC DIST AF 50 P LTR DESCRIPTION B DATE REVISED PER G G 6 3 -0 0 3 1 - 0 2 DWN APVD

125260

Abstract: TDFZ 125236
Contextual Info: TDFZ 125. Vishay Draloric Pot Capacitors with R 16 High Q Ceramic 18KVp TDFZ 125260 2 0.08 70 (2.756) M8 Thread* M8 Thread* ø 125 (4.92 DIA) 1 (0.04) ø 85 (3.346 DIA) ø 85 (3.346 DIA) ø 50.8 ± 0.5 (2.0 ± 0.02 DIA) ø 125 (4.92 DIA) ø 125 (4.92 DIA)

PWM 003

Abstract: CPU08 HC08 M68HC08 M68HC908 MC68HC908QT4 MC68HC908QY1 MC68HC908QY2 MC68HC908QY4 transistor bra 94
Contextual Info: Freescale Semiconductor Application Note AN2475/D 3/2003 Freescale Semiconductor, Inc. Generating a PWM Signal Modulated by an Analog Input Using the MC68HC908QY4 Microcontroller By: Alfredo Olmos Andre Vilas Boas Marcus Serra Espindola Brazil Semiconductor Technology Center

marking v6 zener diode

Abstract: b22 sod-123 General Semiconductor diode marking 49 marking code V6 DIODE zener diode c30 zener SOD123 V1 characteristics zener b51 diode zener B16 DZ23-B22 V17 marking code
Contextual Info: DZ23 Series Vishay Semiconductors formerly General Semiconductor Dual Common-Cathode Zener Diodes VZ Range 2.7 to 51V Power Dissipation 300mW TO-236AB SOT-23 .122 (3.1) .110 (2.8) Mounting Pad Layout .016 (0.4) Top View 0.031 (0.8) .056 (1.43) .052 (1.33)

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS LOC CG RESERVED. D I ST REV I S IONS LTR DESCRIPTION EC 0 3 4 0 - 0 0 1 9 - 0 0 REV; I 49 . 9 [ 5 . 9 DWN DATE EC 0 3 4 0 - 0 0 4 0 - 0 2 APVD 08MAY2000

Ceramic RF Power and HV Capacitors

Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

908QY4

Abstract: dc motor speed control hall pwm analog schematic schematic diagram motor control using pwm module simple home alarm circuit diagram MC68HC908QT2 BLDC microcontroller hall bldc schematic hall effect for bldc spindle motor speed hall effect sensor datasheet 1N5231
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2687/D Rev. 0, 3/2004 Freescale Semiconductor, Inc. BLDC Fan Control using the MC68HC908QT2 By T.C. Lun Applications Engineering Microcontroller Division Hong Kong This application note describes the use of the MC68HC908QT2 microcontroller

Contextual Info: LP3986 Dual Micropower 150 mA Ultra Low-Dropout CMOS Voltage Regulators in micro SMD Package General Description Features The LP3986 is a 150 mA dual low dropout regulator designed for portable and wireless applications with demanding performance and board space requirements.

908QY4

Abstract: Nitron 1N5231 HC08 MC68HC908QT2 MON08 PROG08SZ 9E "hall effect" 908QT2 1k trimpot
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2687/D Rev. 0, 3/2004 Freescale Semiconductor, Inc. BLDC Fan Control using the MC68HC908QT2 By T.C. Lun Applications Engineering Microcontroller Division Hong Kong This application note describes the use of the MC68HC908QT2 microcontroller

TDFZ 125236

Contextual Info: TDFZ 125. Vishay Draloric Pot Capacitors with R 16 High Q Ceramic 18KVp TDFZ 125260 2 0.08 70 (2.756) ø 125 (4.92 DIA) 1 (0.04) ø 85 (3.346 DIA) ø 85 (3.346 DIA) ø 50.8 ± 0.5 (2.0 ± 0.02 DIA) ø 85 (3.346 DIA) 22 ± 1 (0.866 ± 0.04) 236 ± 5 (9.291 ± 0.197)