2sk2564
Abstract: F8F60VX2 29mJ
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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NTE67
Contextual Info: NTE67 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
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F8F60VX2
Abstract: 2sk2564
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2sk2564f8f60vx2fto-22000-200v+1290mj
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2SK2564
Abstract: F8F60VX2 N channel 600v 8a mosfet 60
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2sk2564f8f60vx2fto-22000-200v+3290mjn channel 600v 8amosfet 60
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3N0404
Abstract: infineon smd package
Contextual Info: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1
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ipb80n04s3-04ipi80n04s3-04ipp80n04s3-04pg-to263-3-2+4pg-to262-3-1pg-to220-3-13n0404infineon smd package
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