290A TRANSISTOR Search Results

IRF P-Channel FET 100v

Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
Contextual Info: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient

eg-1w

Contextual Info: Preliminary Data Sheet No. PD - 9.1664 International I R Rectifier H EXFET TRANSISTORS IRFG5210 3D COMBINATION N AND P CHANNEL 2 EACH 200 Volt, 1.60£2 (N and P channel ) H EXFET _ O D £ d\ G y iP y ¿ s is Product Summary The HEXFET technology is the key to International Rectifier’s P art N u m b e r

nte280

Abstract: nte291
Contextual Info: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280

SK3004

Abstract: SK3052 SK3036 SK3018 SK3027/130 SK3115/165 SK3025/129 SK3006 SK3027 SK3024
Contextual Info: Bipolar Transistors LIMIT CONDITIONS CHARACTERISTICS BREAKDOWN VOLTAGE RCA .Type , Device Dissi­ pation Polarity and Material Pt W — -2. . — -2 — Collector to Emitter Vmo y VCfO V Vbo V -30 -32 -25 -32 -34 -12 -25 -18 -16 -15 -5 -12 -23 " -10 -0.5 Typical Current

sk3018

Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115
Contextual Info: THOMSON/ DISTRIBUTOR DTE D | =]GEbfl73 □QG33bl 3 | . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi­ pation Collector Current Contin­

RCA SK3020

Abstract: sk3006 rca sk3004 SK3004/102A SK3012 SK3024 SK3054 SK3018 SK3083 SK3027/130
Contextual Info: J7484 3 9 6 R C A I CORP* DISTRIBUTOR D JT— -f 3*• 66C 02740 £ T U * D e ]| 740 43^ t, DOGS? IR C A CORP/ DISTRIBUTOR & 4D ä PERFORMANCE DATA 3ipolar Transistors LIMIT CONDITIONS CHARACTERISTICS BREAKDOWN VOLTAGE RCA .Type , Device Dissi­ pation Polarity

Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International

68A diode

Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International

123AP

Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Contextual Info: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge

STS11NF30L

Contextual Info: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STS11NF30L

Contextual Info: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STP70NF03L

Abstract: d46a
Contextual Info: STP70NF03L N-CHANNEL 30V - 0.008Ω - 70A TO-220 LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STB70NF03L-1

Abstract: STP70NF03L
Contextual Info: STP70NF03L STB70NF03L-1 N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L STB70NF03L-1 • ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.01 Ω < 0.01 Ω 70 A 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V

Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STB70NF03L-1

Abstract: STP70NF03L
Contextual Info: STP70NF03L STB70NF03L-1 N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L STB70NF03L-1 • ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.01 Ω < 0.01 Ω 70 A 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V

BR 0137

Abstract: STB70NF03L
Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

STB70NF03L

Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

S1470

Abstract: STB70NF03L
Contextual Info: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED

CMJB

Abstract: Siliconix JFETs Dual DG281AP DG284AP DG287BP DG287AP DG28 CMJ-B DG281BA DG281AA
Contextual Info: B Siliconix B E N E F IT S • • Low Error Sam ple and Hold Circuits ■ 100 MHz Signal Switching w ith High OFF Isolation ■ P resettab le Integrators w ith Minimum O ffset Error ■ Low Distortion Click Free Audio Switching Minimum Signal Errors o Low Charge Feedthrough 7 Picocoulombs

diode ux

Contextual Info: 16-Channel/Dual 8-Channel JFET Analog Multiplexers Overvoltage Protected MUX-16/MUX-28 ANALOG DEVICES FEATURES GENERAL D ES C R IP TIO N • • • • • • • • • • • • • The MUX-16 is a m onolithic 16-channel analog m ultiplexer which connects a single output to 1 of the 16 analog inputs