2902 TRANSISTOR Search Results

Contextual Info: ^vnl-dontLusto 20 STERN AVE. SPRINGRELO, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2902 (212) 227-6008 FAX (973) 376-8980 2N4915 (SILICON) NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4M8. MAXIMUM RATINGS Symbol

2N3855A

Contextual Info: TELEPHONE: 973 376-2902 (212| 227-600B FAX: (973) 376-0060 20 STERN AVE. 3PHINGF1S-D, NEW JERSEY 07081 U.SA 2N3855A, Silicon Transistor absolute maximum ratings: (25°C) (unless otherwise specified) Vollagei Collector to Emitter v .'iO VullS Emitter to Base

MAX1551

Abstract: MAX1555EZK-T MAX1555 MAX1551-MAX1555 POK LED MAX1551EZK MAX1551EZK-T MAX1555EZK MAX1555EZ
Contextual Info: 19-2902; Rev 0; 7/03 SOT23 Dual-Input USB/AC Adapter 1-Cell Li+ Battery Chargers Features ♦ Charge from USB or AC Adapter ♦ Automatic Switchover when AC Adapter is Plugged In ♦ On-Chip Thermal Limiting Simplifies Board Design ♦ Charge Status Indicator

AU2902

Abstract: AU2902N AU2902D
Contextual Info: Philips Semiconductors Product specification Low power quad operational amplifier DESCRIPTION AU2902 PIN CONFIGURATION The AU 2902 consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages.

Contextual Info: DEMĆPCM2900/2902 EVM User’s Guide March 2007 Audio Converter Products, Digital Audio SLEU024A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

LM324 DIL

Abstract: LM324N circuit DIAGRAM LM324NPD LM324DDD ic lm324N LM324N LM124D LM324N schematic LM324n power dissipation lm324 DUAL SUPPLY application
Contextual Info: LM 12 4 / L M 2 2 4 / L M 3 2 4 , LM 124A/LM 224A/LM 324A, LM 2902 L o w P ow er Q uad O p eratio nal A m p lifie rs D lfte lr S O IL FEATURES G EN ER AL DESCRIPTION • Internaily frequency compensated for unity gain • Large dc voltage gain 100dB • Wide bandwidth unity gain

UJT 2N2646

Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor
Contextual Info: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT

DIAC 1n5758

Abstract: 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760
Contextual Info: Trigger Devices Trigger devices come under a variety o f d iffe re n t classifications, w ith somewhat d iffe rin g characteristics — U n ijun ctio n Transistors U nidirectional Switches B idirectional Switches Bilateral Triggers PUT D IA C SBS SUS UJT 4 -Layer Diodes

st 2902

Abstract: LM 324 N with 16 pin LM324N 324AL 324AN IC LM 324 lm 324 ic LM324 ic 2902Q 2902D
Contextual Info: LM124, LM124A, LM224, LM224A LM324, LM324A, LM2902, LM2902Q QUADRUPLE OPERATIONAL AMPLIFIERS D 1 9 9 0 , SEPTEMBER 1 9 7 5 -R E V IS E D JULY 1991 • LM 12 4 , L M 1 2 4 A . . . J OR W PACKAGE ALL OTHERS . . . D, DB, J. N. OR PW PACKAGE Wide Range of Supply Voltages:

2N7000

Abstract: ADI1318 CM-300 2n7000 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNiC~~., DATA ““ ~~ . . , .“., . I ‘, ., . “’2N7000 Advance lqformation Power Field Effect Transistor’ ‘ N-Channel Enhancement Mode Siiicon GateTMOS , . . . are designed for high voltage, high speed power switching applacations such as switching regulators, converters, solenoid and”

UJT 2N2646

Abstract: 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits
Contextual Info: g .— , a . Wide Range of Sensitivities S lC S lQ D 3 L 2 W D © @ •■■ ,nPu t C haracteristics fo r M o st A pplications . Industry Standards, w ith a va riety of C ustom S pecifications available. UNIJUNCTION TRANSISTORS - UJT) Device

NT 407 F TRANSISTOR

Abstract: nt 407 f TRANSISTOR 2FE MPS2714
Contextual Info: M P S 2 7 1 4 SILICON NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . designed for use in low-level switching applications. • Low Output Capacitance C ob = 2.5 p F (Typ) @ V C B = 10 Vd c • Fast Switching Time @ I q * 30 m A d c ts * 12 ns (Typ)

MPS3693

Abstract: MPS3694 MPS-3694
Contextual Info: MPS3693 silicon MPS3694 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTORS .designed for ose in RF amplifier applications and AM/FM receivers. Collector-Emitter Sustaining Voltage — VCEO(sus) = 45 Vdc (Min) @ lc = 10 mAdc Current-Gain—Bandwidth Product —

MPSD02

Abstract: MPSD52 MPS-D02 MPS-D52 mps-002
Contextual Info: MPS-D02 NPN SILICON MPS-D52 PNP COM PLEMENTARY SILICON A N N U LA R COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS . . . designed for use in high voltage amplifier and driver applications. • Collector-Emitter Breakdown Voltage — • BVCEO = Vdc (Min) @ lc = 1 0 mAdc

yn 1018

Abstract: MPF820 RS-50S Scans-00100834
Contextual Info: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.

2902N

Abstract: 0324E CA0324E LM324N 2902m IC LM 324 LM324 app notes CA224 CA324 LM2902M
Contextual Info: A R R CA124, CA224, CA324, LM324, LM2902 I S S E M I C O N D U C T O R Quad, 1MHz, Operational Amplifiers for Commercial, Industrial, and Military Applications November 1996 Features Description • Operation from Single or Dual Supplies The CA124, CA224, CA324, LM324, and LM2902 consist of

MPSD05

Abstract: mpsd55 MPS-D05 MPS-D55 IC 13700
Contextual Info: MPS-D05 NPN MPS-D55 PNP SILICON COMPLEM ENTARY SILICON A NN U LA R TRANSISTORS COMPLEMENTARY SILICON TRANSISTORS . . . designed for use in general purpose amplifier applications. • Excellent LED Digit Driver • DC Current Gain Specified - 50 mAdc to 500 mAdc

MPS3704

Abstract: transistor mps3704 2N3706 MPS3705 MPS3706 0482 transistor 2N3705 2N3704 transistors mps3704 2N3704 circuit
Contextual Info: MPS3704 Silicon MPS3705 MPS3706 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTOR . designed f o r use in lo w -c u rre n t, large-signal a m p lifie r a p p lic a tio n s . • Devices S im ila r E le c tric a lly to 2 N 3 7 0 4 , 2 N 3 7 0 5 , 2 N 3 7 0 6

transistor Comparison Tables

Abstract: pin configuration npn transistor BC557 BC647 BC548 or BC558B TRANSISTOR To92 transistor motorola BC647B BC319 BC182 BC547 pin configuration NPN transistor BC548B pin configuration NPN transistor BC548
Contextual Info: Plastic-Encapsulated Small-Signal Transistors CASE 29-02 CASE 29-03 TO-92 M o to ro la ’s sm all-sig na l TO-92 p la stic tra n s is to rs encom ­ pass hundreds of d evices w ith a w id e v a rie ty of ch a ra cte ristics fo r gen eral purpose, a m p lifie r and s w itc h ­

baw 92

Abstract: MPS2369 PP116
Contextual Info: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product

2N3711

Abstract: 2N3707 2N3710 2N3709 MPS3707 MPS3709 MPS3711 MPS3710 S3710 IC 5330 k
Contextual Info: MPS3707 silicon MPS3709 MPS3710 MPS3711 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTORS . designed for use in low -current am plifier applications. Devices S im ila r Electrically to 2 N 3 7 0 7 , 2 N 3 7 0 9 , 2 N 3 7 1 0 , 2N3711 M A X IM U M R A T IN G S

MPS-L51

Abstract: transistor BF 2030
Contextual Info: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage

955 100 12 LAO

Abstract: MPS6571 MPS-6571
Contextual Info: MPS6571 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . designed for pream plifiers in a u d io am plifier applications. • C olle cto r-E m itte r B re a kd ow n V oltage - • L o w N o ise Figure — N F = 1.2 d B (T yp) @ le = 1 00 ß A d c

S100 NPN Transistor

Abstract: S100 transistor MPS6546 S100 TO-92
Contextual Info: MPS6546 silicon NPN SILICON V H F M IXER TRANSISTOR NPN SILICON A N N U LA R V H F M IXER TRANSISTOR . . designed for use in V H F mixer applications. Collector Emitter Breakdown Voltage B V c e O = 25 V dc (Min) @ lc = 1.0 m Adc High Current Gain—Bandwidth Product