28PINTSOP Search Results

7u23

Contextual Info: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.

ARD08

Abstract: KM62256CL-LU
Contextual Info: Preliminary CMOS SRAM KM62256CL-LU 32Kx8 Bit Extended Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7 -5.5 V • Fast Access Time - 3.0V Operation : 100ns Max. - 3.3V Operation : 70ns (Max.) - 5.0V Operation : 55ns (Max.)

Contextual Info: Preliminary CMOS SRAM KM62256CLE-LU 32Kx8 Bit Extended Voltage & Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7-5.5V • Extended Temperature Range : -25 to 85°C • Fast Access Time - 3.0V Operation : 120ns Max.

KMM332F213CS-L

Contextual Info: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic RAM high density memory module. The Samsung

2864b

Abstract: S-2860B S-2864B s286xb 2860B
Contextual Info: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.

Contextual Info: KMM332F203CS-L KMM332F213CS-L DRAM MODULE KMM332F203CS-L & KMM332F213CS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3CS is a 2Mx32bits Dynamic Part Identification

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

TAA 981

Abstract: MSM5117400
Contextual Info: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.

Contextual Info: SONY CXK58257BTM/BYM - 7 0 L L X /1 0 L L X 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM is 262.144 bits high speed C M O S static RAM organized as 3 2,768 CXK58257BTM CXK58257BYM 28 pin TSOP Plastic 28 pin TSOP (Plastic)

PR 8501

Abstract: PARALLEL E2PROM 2860B S-2860B S-2864B
Contextual Info: Rev.1.1 S-2860B/2864B CMOS 64k-bit PARALLEL E2PROM The S-2860B and the S-2864B are low power 8Kx8-bit parallel 2 E PROMs. The S-2860B features wide operating voltage range, and the S-2864B features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.

Contextual Info: Contents Features .1 Pin Assignment .1 Block Operation Mode .2

km48v2104bs

Contextual Info: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2Mx32bits Dynamic Part Identification

S-281XA

Abstract: PARALLEL E2PROM
Contextual Info: Rev.1.1 CMOS 16K-bit PARALLEL E2PROM S-2812A/2817A The S-2812A and the S-2817A are low power 2Kx8-bit parallel 2 E PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.