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    28N170 Search Results

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    onsemi NTH4L028N170M1

    SIC MOSFET 1700 V 28 MOHM M1 SER
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    DigiKey NTH4L028N170M1 Tube 918 1
    • 1 $39.60
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    Avnet Americas () NTH4L028N170M1 Bulk 1
    • 1 $35.35
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    NTH4L028N170M1 Tube 75 Weeks 450
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    Mouser Electronics NTH4L028N170M1 767
    • 1 $38.45
    • 10 $28.48
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    Newark () NTH4L028N170M1 Bulk 662 1
    • 1 $49.43
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    NTH4L028N170M1 Bulk 348 1
    • 1 $40.35
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    Rochester Electronics NTH4L028N170M1 5 1
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    TME NTH4L028N170M1 1
    • 1 $58.09
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    Avnet Asia NTH4L028N170M1 18 75 Weeks 450
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    Avnet Silica NTH4L028N170M1 53 Weeks 30
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    EBV Elektronik NTH4L028N170M1 300 53 Weeks 30
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    Flip Electronics NTH4L028N170M1 900
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    onsemi NTBG028N170M1

    SIC MOSFET 1700 V 28 MOHM M1 SER
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    DigiKey () NTBG028N170M1 Digi-Reel 1
    • 1 $40.16
    • 10 $30.61
    • 100 $30.61
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    NTBG028N170M1 Cut Tape 1
    • 1 $40.16
    • 10 $30.61
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    NTBG028N170M1 Tape & Reel 800
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    Avnet Americas NTBG028N170M1 Tape & Reel 48 Weeks 800
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    • 1000 $25.65
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    Mouser Electronics NTBG028N170M1
    • 1 $40.42
    • 10 $32.86
    • 100 $30.92
    • 1000 $28.99
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    Newark () NTBG028N170M1 Tape & Reel 10
    • 1 $50.48
    • 10 $50.48
    • 100 $40.29
    • 1000 $37.82
    • 10000 $36.18
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    NTBG028N170M1 Cut Tape 1
    • 1 $50.48
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    • 100 $40.29
    • 1000 $37.82
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    NTBG028N170M1 Bulk 800
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    TME NTBG028N170M1 800
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    Avnet Asia NTBG028N170M1 48 Weeks 800
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    Avnet Silica NTBG028N170M1 31 Weeks 800
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    EBV Elektronik NTBG028N170M1 32 Weeks 800
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    onsemi NTCTR028N170M1

    SIC MOS TNR 28MOHM 1700V M1 WAFE
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    DigiKey NTCTR028N170M1 Tape & Reel 500
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    Avnet Americas NTCTR028N170M1 Tape & Reel 500
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    • 1000 $19.13
    • 10000 $18.84
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    Richardson RFPD NTCTR028N170M1 500
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    IXYS Corporation IXBH28N170A

    IGBTs 30Amps 1700V
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    Mouser Electronics IXBH28N170A
    • 1 $23.34
    • 10 $18.69
    • 100 $18.69
    • 1000 $15.29
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    28N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXBH28N170

    Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 60 A VCE sat = 3.5 V IXBH 28N170 IXBT 28N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		28N170 28N170 O-268 O-247 728B1 123B1 065B1 IXBH28N170 PDF

    TO-268

    Abstract: BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint
    Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 28N170A IXBT 28N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		28N170A O-268 O-247) 728B1 123B1 728B1 065B1 TO-268 BiMOSFET transistor TO-247 Outline Dimensions ad smd transistor smd diode 819 IXBT28N170A IXBH28N170A transistor ad 162 TRANSISTOR 610 smd TO-268 footprint PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF