28MBIT Search Results

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Intel StrataFlash Memory j3

Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

RC28f320j3d

Contextual Info: Intel Embedded Flash Memory J3 v. D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features „ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) „

28F256J3

Abstract: RC28F256J3C-125 AP-732 Micron MLC RC28F128J3C-150 28F256K18 28F640J3 965 intel leaded Intel J3 memory PC28F640J3
Contextual Info: Intel StrataFlash Memory J3 256-Mbit (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads — 30 ns Asynchronous Page mode Reads

FBGA63

Abstract: 29LW320 28F320 7286X amd Block Lock Bit Reset 2Mx16 8x32K Am29DL322
Contextual Info: Macronix International Co., Ltd. Taipei Office: 19F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW320T/B instead of Intel 28F320B3/C3 and AMD

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V

SA3001

Abstract: MB84VD2208XEA SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance

28f128j3d75

Abstract: 28f320j3d75 28F640J3D75 JS28F128J3D-75 28F128J3D-75 JS28F320J3D-75 28F128J3d 28F640J3D 28F320J3D-75 28f256j3d
Contextual Info: Numonyx Embedded Flash Memory J3 v D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features „ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks)

SA70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA-85/90/MB84VD2229XEA-85/90 MB84VD2228XEE-85/90/MB84VD2229XEE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V

MARKING SA70

Abstract: SA70 SA-1500
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50206-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEG-90/MB84VD2219XEG-90 MB84VD2218XEH-90/MB84VD2219XEH-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V

Contextual Info: Intel Embedded Flash Memory J3 v. D 32, 64, 128, and 256 Mbit (Monolithic) Datasheet Product Features „ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) „

SA70

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50203-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218X-10/MB84VD2219X-10 MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES

scr 220v

Abstract: pc 8178 128M-BIT DC24V PT100Cu50 RS485-USB 128-MBIT
Contextual Info: NWP-CSR 系列彩色无纸记录仪 CSR 系列彩色无纸记录仪采用 5.7 英寸 TFT 或 STN 彩 色液晶屏作为显示器，采用大容量 FLASH（最大 28Mbit） 作为存储介质，结构小巧紧凑，性价比高。数据可以保存到 USB 存储棒，也可以通过通讯方式传送到上位机，通过 PC

SA70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA-90/MB84VD2229XEA-90 MB84VD2228XEE-90/MB84VD2229XEE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V

28F640J3

Abstract: E28F640J3A-120 Intel StrataFlash Memory j3 28F256K18 28F128J3 28F160S3 28F256J3 28F320J3 28F320J5 28F320S3
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page-Mode Reads

DS05-50205-1E

Abstract: MB84VD2208XEA SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50205-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

28F256J3

Abstract: 28F128J3 TE28F640J3C120 253418 297833 28F160S3 28F320J3 28F320J5 28F320S3 28F640J3
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125ns Initial Access Speed (256Mbit density only) — 25 ns Asynchronous Page-Mode Reads

2SA541

Abstract: SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XEC-90/MB84VD2219X EC -90 MB84VD2218XEE-go/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

Contextual Info: E2D0026-39-23 O K I Semiconductor P rev io u s version : M ay. 1997 M SM 6688/6688L ADPCM Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6688/6688L is a "solid-state recorder" IC developed using the ADPCM method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and a dedicated register

10100XXX

Contextual Info: ISSI IS71VPCF16XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 16 Mbit Simultaneous Operation Flash PRELIMINARY Memory and 4 Mbit Static RAM INFORMATION MAY 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: