28MAY2008 Search Results

STGB19NC60K

Abstract: STGB19NC60KT4 STGP19NC60K GB19NC60K
Contextual Info: STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling

Contextual Info: 5 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED ALL C O P Y R IG H T - BY T O O E LE C T R O N IC S FO R 4 3 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. AA C O R P O R A TIO N . 00 D E S C R IP T IO N R1 REV PER E C R —0 8 —0 1 3 4 8 6

GP19NC60H

Abstract: GW19NC60H STGP19NC60H STGW19NC60H
Contextual Info: STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ High input impedance (voltage driven) Applications ■ High frequency motor control ■ SMPS and PFC in both hard switch and resonant topologies 2 3 3 1 TO-247

M41T81

Abstract: AN1012 M41T81S bmb2 smd M41T813 ABE smd
Contextual Info: M41T81 Serial access real-time clock with alarm Not For New Design Features • For new designs use M41T81S ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 8 32 KHz crystal oscillator integrating load

Contextual Info: TUSB3410, TUSB3410I USB to Serial Port Controller Data Manual May 2008 Connectivity Interface Solutions SLLS519G IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: M41T81 Serial access real-time clock with alarm Datasheet - production data Description 8 1 SO8 8-pin SOIC Features • For all new designs use M41T81S  Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century

NAND16GW3D2A

Abstract: C5761 2112B
Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage

Contextual Info: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY

GP19NC60KD

Abstract: GF19NC60KD GF19NC60 GB19NC60KD STGF19NC60KD
Contextual Info: STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs

A115-A

Abstract: C101 LV595A SN54LV595A SN74LV595A
Contextual Info: SN54LV595A, SN74LV595A 8ĆBIT SHIFT REGISTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS414N − APRIL 1998 − REVISED APRIL 2005 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 15 2 3 14 4 13 5 12 6 11 7 10 8 9 QD QE

Contextual Info: 2 T H I S DRAWING I S UNPUBLI SHED. COPYRI GHT 20 RELEASED FOR PUB L I C A T I O N 20 LOC BY TYCO ELECTRONI CS CORPORATI ON. ALL R 1GHTS RESERVED. REV 1SIONS DI ST 00 GP P LTR C C1 D AMP" T RADEMARK, PART NUMBER, DESCRI PTI ON REV PER ECR-07-012702 REVISED

16G nand

Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

STM8S205

Abstract: STM8S203 pm0051 4806h 42me pm0044 stm8s203k3 STM8S205xx qfn 5x5 thermal resistance STM8S203F3
Contextual Info: STM8S203xx STM8S205xx Performance line, STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, LINUART, USART, SPI, I²C Preliminary Data Features Core • Max fCPU: up to 16 MHz Advanced STM8 core with Harvard architecture and 3-stage pipeline

MS 7529

Abstract: block diagram for RF transmitter AND RECEIVER doc AN1012 M41T81 M41T81S AN-1572 bmb2 smd
Contextual Info: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,

Contextual Info: TLC372 LinCMOS DUAL DIFFERENTIAL COMPARATORS SLCS114E − NOVEMBER 1983 − REVISED JULY 2008 D D D D D D D D 1OUT 1IN − 1IN + GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN − 2IN + TLC372M . . . FK PACKAGE TOP VIEW NC 1IN − NC 1IN + NC 4 3 2 1 20 19 18 5 17

Contextual Info: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,

ISO7231

Abstract: ISO7230 ISO7230A ISO7230ADW ISO7230ADWR ISO7231A ISO7231ADW
Contextual Info: ISO7230A ISO7231A www.ti.com . SLLS906 – MAY 2008 One Megabit per Second Triple Digital Isolators

NAND16GW3D2A

Abstract: NAND32GW3D4A
Contextual Info: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage

GP19NC60H

Abstract: GW19NC60H STGP19NC60H STGW19NC60H
Contextual Info: STGB19NC60H, STGP19NC60H STGW19NC60H 19 A - 600 V - very fast IGBT Features • Low on-voltage drop VCE(sat ■ High frequency operation Applications 2 3 1 TO-247 ■ High frequency motor drives ■ SMPS and PFC in both hard switch and resonant topologies

NAND16GW3D2A

Abstract: NAND32GW3D4A NAND08GW3D2A
Contextual Info: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area

glucose meter application note

Abstract: TPD2E001DZDR TPD2E001 TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Contextual Info: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY

TPD2E001

Abstract: TPD2E001DRLR TPD2E001DRSR TPD2E001DRYR TPD2E001DZDR TPD2E001YFPR TPD3E001 TPD4E001 TPD6E001
Contextual Info: TPD2E001 www.ti.com. SLLS684E – JULY 2006 – REVISED JUNE 2008 LOW-CAPACITANCE 2-CHANNEL ±15-kV ESD-PROTECTION ARRAY

STM8S205C6

Abstract: COSMIC STM8S205 STM8S20
Contextual Info: STM8S203xx STM8S205xx Performance line, STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, LINUART, USART, SPI, I²C Preliminary Data Features Core • Max fCPU: up to 16 MHz Advanced STM8 core with Harvard architecture and 3-stage pipeline

Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage