28MAR07 Search Results

Contextual Info: 107-68038 Packaging Specification 28Mar07 Rev F AMP 1mm STD EDGE 124 DUAL POS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of AMP 1mm STD EDGE 124 DUAL POS. 订定 AMP 1mm STD EDGE 124 DUAL POS 产品之包装规格及包装方式。

RCA0603

Abstract: RCA1206 RCA0402 smd transistor marking ey RESISTOR 1206 AEC-Q SMD resistors 1218 RCA2010 smd transistor marking code EY RCA1218 RCA2512
Contextual Info: RCA.-P e3 Vishay Automotive Grade Lead Pb -free Thick Film, Rectangular, Semi-Precision Chip Resistors FEATURES • Automotive Grade = qualified according to AEC-Q 200 • High volume product suitable for automotive applications • Low temperature coefficient (± 50 ppm/K) and tight

AN609

Abstract: Si3424DV
Contextual Info: Si3424DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise: @ 10kHz offset:

CGB7001-BD

Abstract: CGB7001-BD-000V DM6030HK TS3332LD .0168 3.5 1600
Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier March 2007 - Rev 28-Mar-07 CGB7001-BD Chip Layout Features Low Operating Voltage: 5V 28.0 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 20.5 dB Gain @ 850 MHz 14.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Construction

Contextual Info: Hermetic Technology/Construction Vishay Angstrohm Vishay Angstrohm Hermetically-Sealed Metal Film Resistors PRODUCT TECHNOLOGY Hermetic enclosure Hermeticity is the solution Following helixing, the hermetic seal is established by fusing the clear glass sleeve to kovar bellows-type discs in a dry

Contextual Info: Hermetic Technology/Construction Vishay Angstrohm Vishay Angstrohm 密封金属膜电阻 产品技术 预调节和测试 密封是解决之道 • 潮湿是导致电阻出现故障的主要因素之一，可引起开路，使 电阻超出容差范围。 Vishay Angstrohm 密封电阻具备防潮

AN609

Abstract: Si1913DH
Contextual Info: Si1913DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

40168

Abstract: AN609 Si1022R
Contextual Info: Si1022R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1563EDH
Contextual Info: Si1563EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise: @ 10kHz offset:

4802

Abstract: 456128 3844 5793 AN609
Contextual Info: Si3401ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1913EDH
Contextual Info: Si1913EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

mosfet 4800

Abstract: si3440 4800 mosfet AN609 Si3440DV
Contextual Info: Si3440DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

CTL4468-002

Abstract: lbff 1408150-1
Contextual Info: 501-672 Qualification Test Report 30Jan08 Rev A Series MMCX 50 Ohm Micro-Miniature Connectors 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Series MMCX 50 ohm micro-miniature connectors to determine their conformance to the requirements of Product Specification 108-2084 Revision A.

Contextual Info: New Product MSP3V3 Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Very low profile - typical height of 0.65 mm MicroSMP • Ideal for automated placement • Oxide planar chip junction • Unidirectional polarity only

AN609

Abstract: Si1912EDH 123.26
Contextual Info: Si1912EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR MINIQFN-6L Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage 85/85 165 27,720 85 °C, 85 % RH 0.00 BOND INT 80 40,000 200 °C + N2 0.00 HAST 165 16,500 130 °C, 85 % RH

Contextual Info: Z302 BV 20327 Vishay Draloric Axial Cemented, Fusible, Wirewound Resistors FEATURES • Can operate as both a normal resistor and as a fuse • Fuses when overloaded by more than 100 times the rated power • Ceramic core • Non flammable cement coating • Mainly designed to customer requirements

Leaded Fixed Film Resistors

Abstract: variable resistor spw 068 vishay rCR REPLACEMENT HVR68 Marking a1 rju Resistance nk4 560k 5% rlr05 wk2 680k RESISTOR 2322 156 VISHAY BC Component
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed film resistors vishay vSe-db0007-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Leaded Fixed Wirewound Resistors

Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier March 2007 - Rev 28-Mar-07 CGB7001-BD Chip Layout Features Low Operating Voltage: 5V 28.0 dBm Output IP3 @ 850 MHz 3.3 dB Noise Figure @ 850 MHz 20.5 dB Gain @ 850 MHz 14.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature

Z302SWI

Abstract: fusible resistor fuse resistor
Contextual Info: Z302 BV 20327 Vishay Draloric Axial Cemented, Fusible, Wirewound Resistors FEATURES • Can operate as both a normal resistor and as a fuse • Fuses when overloaded by more than 100 times the rated power • Ceramic core • Non flammable cement coating • Mainly designed to customer requirements

AN609

Abstract: Si3458DV
Contextual Info: Si3458DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].