28JAN1 Search Results

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Contextual Info: T H IS LOG 827 VERWENDET WAR PO LZ NR. 7 30 ZEICHNUNG NEU REVISED PER FÜR C O N TRO LLED DO C UM ENT. DATE DWN APVD ERSTELLT ECO-09-023313 AEG KK HMR 120CT09 ECR-1 0 - 0 2 5 7 7 4 28JAN1 B E S T E LL-N R . P O ^ 5 .0 8 7 .6 2 A D E S C R IP T IO N - L ± 0 .3

Contextual Info: Paper Sensor KPS1003C- □ Description The KPS1003C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation

CEA-XX-250UN-120

Abstract: CEA-XX-250UN-350
Contextual Info: 250UN Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-250UN-120 CEA-XX-250UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 actual size DESCRIPTION General-purpose gage with narrow geometry. Exposed

Contextual Info: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated

Contextual Info: AT91SAM ARM-based Embedded MPU SAM9263 Description The AT91SAM9263 32-bit microcontroller, based on the ARM926EJ-S processor, is architectured on a 9-layer matrix, allowing a maximum internal bandwidth of nine 32-bit buses. It also features two independent external memory buses, EBI0 and EBI1, capable of interfacing with a wide range of memory devices and an IDE hard disk. Two external buses prevent

Contextual Info: VS-6CWQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common

Contextual Info: MMBD7000-V-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Material categorization:

Contextual Info: MMBD7000-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode, especially suited for automatic insertion • AEC-Q101 qualified 1 • Material categorization:

TSOP85438AP5

Abstract: TSOP8 TSOP85238AP5 TSOP85256AP5 TSOP85 TSOP85236 TSOP852 TSOP85230AP5 TSOP85233AP5 TSOP85236AP5
Contextual Info: TSOP852.AP5, TSOP854.AP5 Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detectors and preamplifier in one package • Internal filter for PCM frequency • Supply voltage: 2.5 V to 5.5 V

Contextual Info: RMKD CNP Vishay Sfernice Hermetic, Dual-In-Line Packaged Resistor Networks FEATURES Actual Size The superstable RMKD nickel-chromium integrated networks are available in a range of standard designs which bring a completely new “state-of-the-art” to precision

VSMG2020X01

Abstract: VSMG2000 VSMG2000X01 VEMD2000X01 VSMG2020
Contextual Info: VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 • • • • • • • • • • • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8

Contextual Info: 015DJ Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-015DJ-120 EP-08-015DJ-120 SA-XX-015DJ-120 SK-XX-015DJ-120 120 ± 0.3%

Contextual Info: 125BT Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-125BT-120 ED-DY-125BT-350 WA-XX-125BT-120 WK-XX-125BT-350 EP-08-125BT-120

WK-XX-250BG-350

Contextual Info: 250BG Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 120 ± 0.15% 350 ± 0.3% 120 ± 0.3% 350 ± 0.3% 100 ± 0.15% 120 ± 0.15% 120 ± 0.3%

CEA-XX-125UN-350

Contextual Info: 125UN Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-125UN-120 CEA-XX-125UN-350 120 ± 0.3% 350 ± 0.3% P2 P2 actual size DESCRIPTION General-purpose gage with narrow geometry. Exposed

Contextual Info: 125LW Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION OPTIONS AVAILABLE RESISTANCE OHMS See Note 1 L2A-XX-125LW-120 L2A-XX-125LW-350 C2A-XX-125LW-120 C2A-XX-125LW-350 120 ± 0.6% 350 ± 0.6%

C2A-XX-250LW-350

Abstract: L2A-XX-250LW-350
Contextual Info: 250LW Micro-Measurements General Purpose Strain Gages - Linear Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1 120 ± 0.6% 350 ± 0.6% 120 ± 0.6% 350 ± 0.6% L2A-XX-250LW-120 L2A-XX-250LW-350 C2A-XX-250LW-120 C2A-XX-250LW-350

Contextual Info: VS-6CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop 2 Common cathode 1 3 Anode Anode D-PAK TO-252AA

Contextual Info: SPICE Device Model SUM110N04-2m1P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Typical Performance Characteristics www.vishay.com Vishay Sprague TH5 Tantalum Capacitors ELECTRICAL PERFORMANCE CHARACTERISTICS ITEM PERFORMANCE CHARACTERISTICS Category temperature range -55 °C to +200 °C Category voltage Category voltage is the same within entire temperature range and is equal to rated voltage

Contextual Info: SPICE Device Model SUM110P08-11L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

VS-2EGH02HM3

Contextual Info: VS-2EGH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • Specific for output and snubber operation • Low forward voltage drop

Contextual Info: V8PAN50-M3 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement TMBS SMPATM • Trench MOS Schottky technology • Low power losses, high efficiency

SMBJ64A

Abstract: SMBJ12A
Contextual Info: VISHAY GENERAL SEMICONDUCTOR www.vishay.com Transient Voltage Suppressors Application Note Using the Power vs. Time Curve By Bruce Hartwig Senior Automotive Applications Engineer How can the maximum transient power and current capability for silicon Transient Voltage Suppressors TVS be