28F010 Search Results

Contextual Info: CRTRLYST S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 Fax: (408) 980-8209 28F010/28F010I 1 Megabit (128K x 8) CMOS FLASH MEMORY DESCRIPTION FEATURES The C 28F010/28F0101 is a high speed 128K x 8-bit electrically erasable and reprogrammable

TN28F010

Abstract: 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

D28F010-120P1C4

Abstract: D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010 28F010
Contextual Info: INTEL CORP M EM OR Y / L O G I C 15E D I MflSbl7b QObllOl 0 I ir'iraSMUWULfM^lrtU 28F010 T'H6-I5'Z7 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Program m ing Algorithm — 10 jus Typical Byte-Program

28F010

Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP

BIOS 32 Pin PLCC

Abstract: circuit diagram of flash bios A1048 circuit diagram of plcc NM27C010 NM28F010
Contextual Info: 28F010 S g National Æ M Semiconductor ADVANCE INFORMATION 28F010 1-Mbit 131,072-Word x 8-Bit CMOS FLASH General Description Features T h e N M 28F010 is a 1,048,576-bit FLASH E lectrically Eras­ able and Program m able non-volatile M em ory device. The

intel 28F256

Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020

29020

Contextual Info: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

Contextual Info: in te l 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 |as Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical

Contextual Info: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes

PPH 2222 36

Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

29020

Contextual Info: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity

transistor t 2190

Abstract: intel 2114 SmartDie 28F010
Contextual Info: inte] 28F010 1024K 128K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 1 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10ns Typical Byte Program — 2 Second Chip Program 100K Erase/Program Cycles Typical

29F020

Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program

a6628

Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
Contextual Info: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020

PLD intel

Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program

intel 28F010

Abstract: N28F010-120 28F010 80C186 E28F010
Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for

Fujitsu MBM28F010

Contextual Info: September 1992 Edition 1.0 . DATASHEET M B M 28F010-12/-15/-20 1-MBIT CMOS FLASH MEMORY DESCRIPTION The 28F010 is a 1-Mbit flash memory incorporating fast eras« and byte-programming functions. As in conventional EPROMs, a stuck gate transistor is used for the memory celL The CMOS structure of the peripheral

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program

Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

qml-38535

Contextual Info: AMD i l DISTRIBUTION STATEMENT A . Approved for public release; distribution is unliaited. SM D Drawing Num ber 5962-90899 G eneric Part N um ber 28F010 4-663 n AM D 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part nuaber documentation systea see 6 .6 herein . Two

Contextual Info: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase

Contextual Info: CATALYST SEMICONDUCTOR 45E » • ITbEbTS G0G14b4 5 BKST T 'H 'I S - 2 7 I C R T R L Y 5 T ¡ S E M I C O N D U C T O R 2231 CALLE D E LUNA, SANTA CLARA, CA 95Û54 Telephone: 408 748-7700 Fax: (408) 980-8209 28F010/28F010I 1 Mégabit (128K x 8) CMOS FLASH MEMORY

29F020

Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface

28F010

Abstract: A7TA
Contextual Info: Philips Components-Signetics 28F010 Document No. ECN No. Date of Issue A ugust 1 9 9 0 S ta tu s O b je c tiv e Specification 1024K-bit FLASH memory 128K x 8 M e m o ry Prod ucts FEATURES GENERAL DESCRIPTION • 1 2 8 K -b y te w ritab le n o n -vo latile