28F001 Search Results

28F001

Abstract: intel 28F001BXT
Contextual Info: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

28F001BXT

Abstract: 28F001BX-B 28F001BX-T 28F001BX intel 28F001BXT intel BIOS 32 Pin PLCC
Contextual Info: INTEL PRODUCTS INTEL Blocked Flash Memory 28F001BX-B/28F001BX-T • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports modular code development and updates Simplifies code updates Extends battery life Improved wait-state performance Secures boot code High-integration blocked

intel DOC

Abstract: 28F001BX 290406-00
Contextual Info: 28F001BX SPECIFICATION UPDATE Release Date: April, 1997 Order Number: 297836-001 The 28F001BX may contain design defects or errors known as errata. Characterized errata that may cause the 28F001BX’s behavior to deviate from published specifications are documented in

P28F001BXT150

Abstract: P28F001BX-T150 I28F001B MCS196 29040
Contextual Info: in te i 5 VOLT BOOT BLOCK FLASH MEMORY 28F001BX x8 • High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns, 150 ns Maximum Access Time — 5.0 V ±10% Vcc

P28F001

Abstract: 29040 N28F001BX-T150 28F001BX-B 28F001BX-T
Contextual Info: intJ 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V +10% Vcc

N28F001BX-B120

Abstract: 28F001BX-B 28F001BX-T TN28F001BX-T150 28F001BN-B 28F001BN-T 28F001BX 80960CA MCS-196 MCS-51
Contextual Info: 1-MBIT 128K x 8 BOOT BLOCK FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block Y High-Performance Read 70 75 ns 90 ns 120 ns 150 ns

P28F001

Abstract: 28f001bxt150 28F001BX-B 28F001BX-T
Contextual Info: in te i 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 28F001BX- T/28F001BX-B/28F001BN- T/28F001BN-B • High-lntegration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns, 150 ns Maximum Access

intel bios recovery

Abstract: 28F001BX 28F002BC
Contextual Info: INTEL PRODUCTS INTEL Boot Block Flash Memory for PC BIOS 28F001BX, 28F002BC and 28F004BV • ■ ■ ■ ■ Integrated block architecture – Hardware-lockable boot block – Small sector parameter blocks – Large main blocks Byte-wide operation 3.3V and 5V read options

intel 28F001BXT

Abstract: SmartDie 29040 28F001BX-T AP-341 Designing an Updatable BIOS
Contextual Info: intei. 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification m High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot

N28F001BX-T150

Abstract: 28F001BX-B N28F001BX 120 intel 80c188 users manual
Contextual Info: in te i 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Archltecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

80960KX

Abstract: 28F001 28F001BX-B 28F001BX-T
Contextual Info: intei 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 120 ns Maximum Access Time — 5.0V ±1 0% Vcc

29783

Abstract: 290406-00 28F001BX intel DOC Intel Flash markings
Contextual Info: 5 VOLT BOOT BLOCK FLASH MEMORY 28F001BX x8 SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297836-002 The 28F001BX may contain design defects or errors known as errata. Characterized errata that may cause the 28F001BX’s behavior to deviate from published specifications are documented in

XT150

Abstract: xt90
Contextual Info: in tj 28F001BX-T/28F001BX-B 1M 128K X 8 CMOS FLASH MEMORY High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block High-Performance Read — 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time

Contextual Info: in te i • 28F001BX-T/B 1M 128K x 8 CMOS FLASH MEMORY SmartDie Product Specification • High Integration Blocked Architecture — One 8 KByte Boot Block with Lock Out — Two 4 KByte Parameter Blocks — One 112 KByte Main Block — T = Top Boot, B = Bottom Boot

Contextual Info: in tj, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V ±10% Vcc

MCS-196

Abstract: 28F001BX-B 28F001BX-T 28F001BN-B 28F001BX 80960CA MCS-51 intel 80286 circuits intel BIOS 32 Pin PLCC N28F001BX-T150
Contextual Info: E 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B n n n n n High-Integration Blocked Architecture  One 8 KB Boot Block w/Lock Out  Two 4 KB Parameter Blocks  One 112 KB Main Block Simplified Program and Erase

intel 80c188 users manual

Abstract: MCS-196 microprocessor 80286 internal architecture N28F001BX-B120 N28F001BX-B150 28F001BX 28F001BX-B 28F001BX-T 80960CA MCS-51
Contextual Info: E 5 VOLT BOOT BLOCK FLASH MEMORY 28F001BX x8 n n n n n High-Integration Blocked Architecture  One 8 KB Boot Block w/Lock Out  Two 4 KB Parameter Blocks  One 112 KB Main Block Simplified Program and Erase  Automated Algorithms via On-Chip Write State Machine (WSM)

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: in te i 1-MBIT 128K X 8 BOOT BLOCK FLASH MEMORY 2 8 F 0 0 1 B X -T /2 8 F 0 0 1 B X -B /2 8 F 0 0 1 B N -T /2 8 F 0 0 1 B N -B • High-Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block

Contextual Info: PRELIMINARY in te l 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read — 80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption — 20 mA Typical Read Current x8-Only Input/Output Architecture — Space-Constrained 8-bit

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

Contextual Info: Preliminary 28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 |xA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year

Contextual Info: B ' i c i L _ Y s ~ r Preliminary 28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year

82371FB

Abstract: 28F002BC 82437fx 36A4
Contextual Info: E n n n n n n PRELIMINARY 28F002BC 2-MBIT 256K X 8 BOOT BLOCK FLASH MEMORY High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time Low Power Consumption  20 mA Typical Read Current x8-Only Input/Output Architecture  Space-Constrained 8-bit