28A ZENER DIODE Search Results

Contextual Info: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct

E30NK90Z

Abstract: JESD97 STE30NK90Z
Contextual Info: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized iSOTOP Description

CT-1014

Contextual Info: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

Y30NK90Z

Abstract: JESD97 STY30NK90Z
Contextual Info: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

DSA0025971

Abstract: 28A zener diode e30nk90z STE30NK90Z schematic diagram welding device
Contextual Info: STE30NK90Z N-CHANNEL 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STE30NK90Z • ■ ■ ■ Figure 1: Package VDSS RDS on ID Pw 900 V < 0.26 Ω 28 A 500 W TYPICAL RDS(on) = 0.21 Ω EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

28A zener diode

Abstract: STY34NK80Z schematic diagram welding device STY3
Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STY34NK80Z

Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SML02PZ04NJ PACKAGE ILLUSTRATION Hermetically Sealed Zener Diode for High Rel Applications. FEATURES: • • • • SCREENING OPTIONS AVAILABLE HIGH SURGE CURRENT RATING HERMETIC CERAMIC PACKAGE STANDARD TOLERANCE VALUES +/5% SMD05 PIN 1 – Anode PIN OUTS

Contextual Info: SML02PZ04NJ PACKAGE ILLUSTRATION Hermetically Sealed Zener Diode for High Rel Applications. FEATURES: • • • • SCREENING OPTIONS AVAILABLE HIGH SURGE CURRENT RATING HERMETIC CERAMIC PACKAGE STANDARD TOLERANCE VALUES +/5% SMD05 PIN 1 – Anode PIN OUTS

33A zener diode

Abstract: zener diode 46a
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

zener diode 46a

Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Contextual Info: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component

d761

Contextual Info: CD4728A • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru CD4764A • ELECTRICALLY EQUIVALENT TO 1N4728A THRU 1N4764A • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

39A zener diode

Abstract: SMAJ ZENER DIODE SMAJ4730A
Contextual Info: MCC SMAJ4728A THRU SMAJ4764A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100
Volts Low Zener Impedance

Contextual Info: Zener Diodes Surface Mount 1W SML4728A - SMZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free For use in stabilizing and clipping

Contextual Info: Zener Diodes Surface Mount 1W SMA4728A - SZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component For use in stabilizing and clipping

51a zener

Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Contextual Info: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

Contextual Info: STW29NK50ZD N-CHANNEL 500V - 0.12Ω - 29A TO-247 Fast Diode SuperMESH MOSFET TARGET DATA TYPE STW29NK50ZD VDSS RDS on ID Pw 500 V < 0.16 Ω 29 A 378 W TYPICAL RDS(on) = 0.12 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCE

Contextual Info: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Contextual Info: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

GBAN-PVI-1

Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
Contextual Info: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

266CT125-3E2A

Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
Contextual Info: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit

W29NK50Z

Contextual Info: STW29NK50ZD N-CHANNEL 500V - 0.12Ω - 29A TO-247 SuperFREDMesh MOSFET TARGET DATA TYPE STW29NK50ZD VDSS RDS on ID Pw 500 V < 0.16 Ω 29 A 378 W TYPICAL RDS(on) = 0.12 Ω HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCE