28N50Q Search Results
28N50Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR |
Original |
28n50qo-247728b1123b1+1 | |
28n50Contextual Info: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
28n50qo-247728b1123b1+2 | |
28N50Contextual Info: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR |
Original |
28n50qo-247728b1123b1+2 | |
28N50Q
Abstract: SiS 486 28n50
|
Original |
28n50qo-247o-268728b1+4 | |
28N50Contextual Info: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
28n50qo-247o-268728b1+1 | |
|
Contextual Info: Advanced Technical Information IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR |
Original |
28n50qo-247728b1123b1+1 | |
|
Contextual Info: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
Original |
28n50qo-247o-268728b1 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
|
Original |
ms-01310-pin5m-1994mo-229+10 |