28C64A Search Results

Contextual Info: GENERAL INSTRUMENT PREUOMilDNIÂIRlY D 1 N IF O M Â T D O IM 28C64A 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • High Performance CMOS Technology for Low Power Dissipation — 100 /uA Standby — 30 mA Active ■ Fast 1-ms Byte Write Time

2BC64

Contextual Info: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active

Contextual Info: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms

Contextual Info: 28C64A M icro ch ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100|iA Standby • Fast Byte Write Time— 200|js or 1ms • Data Retention >10 years

200B

Abstract: 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25
Contextual Info: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13

Contextual Info: 28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal

Contextual Info: Military 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns Maximum • C M O S Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms

Contextual Info: 28C64A PR O D UC T PREVIEW 64 High Speed CMOS K Electrically Erasable PROM October 1989 Block Diagram Features • ■ ■ ■ High Speed: 90, 120, 150 ns Access Times ROW ADDRESS LATCHES Commercial and Military Temperature Ranges CMOS Technology Low Power

Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3

Contextual Info: 3890002 GENL mCROCHIP $ TECHNOLOGY I NS T R / INC GENERAL INSTRUMENT 83D MICROCHIP A3 D 28C64A 03412 bl03SGl 0GD341S D T-M q-i3~27 1 I P B i y H D I i M I R V O lN lF Û IR tl T D Û IN l 64K (8K x 8 CMOS ElectricaUy Erasable PROM FEATURES • High Performance CMOS Technology for Low

28C64A

Abstract: A12C HA11
Contextual Info: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

ltdf

Abstract: 28C64A 28C64A-20 28C64A-25
Contextual Info: í « GENERAL INSTRUM ENT 28C64A PREURflDMARY ÖMFORRjflÄTOONI 64K 8K X8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Top View w RDY/BUSY C •1 tNCk a 12 rL. 2 A7t= AeC AsC A4 c A3 C 3 4 5 6 7 A2 C 8 Al C 9 A(j C 10 OUTPUT ENABLE !-=—-

26c64

Abstract: 26C64A *26C64
Contextual Info: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles

28C64AP

Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Contextual Info: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

28C64A-15

Abstract: 28C64A ic 8870 ttl
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years

Contextual Info: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years

Contextual Info: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

28C64A

Abstract: A12C
Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years

KM28C64A20

Abstract: KM28C64A-20
Contextual Info: 28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal

Contextual Info: t>3E D • bl03201 D0D7540 Mflñ IMCHP MICROCHIP TECHNOLOGY INC 28C64A Q M icrochip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100mA Standby

Contextual Info: M ic r o c h ip 28C64A 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write