283 DIODE Search Results
283 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
283 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BA282
Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
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q62702-a428fha07001do-35q62702-a429+7 | |
TPS6116x
Abstract: HPA283 MBR0540T1 SLUA271 TPS61160 TPS61161 TPS61165 W5SM-JXJZ
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slvu224ctps61165evm-283tps61165tps6116x+6 | |
cm 8600 cContextual Info: 40E D EB □ □ □ 0 cn 4 1 I-3SENI FASCO INDS/ SENISYS CLD71 CLD72 CLD71BB Silicon Planar CLD72BB Photovoltiac Diodes "["-•-ll-'ol Product Data — H .283 0IA . l-«- — .283 DIA. GENERAL DESCRIPTION — The CLD Series of Photo diodes is specifically designed to optimize Photovoltaic |
OCR Scan |
cld71cld72cld71bbcld72bb+3 | |
OMRON RELAY Cross Reference
Abstract: DC solid state relay relay cross reference Omron G3MC-201PL Solid State Relay phototriac catalogue OMRON RELAY G2R Cross Reference ac ssr G3MC-201PL G3MC-201P P6BF-4BND
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k060-e2-05k913-e2-01omron relay cross referencedc solid state relay+8 | |
A3gq
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ200
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003dia00dia079dia100805j+9 | |
HPA283
Abstract: MBR0540T1 PTC36SAAN SLUA271 TPS61160 TPS61161 TPS61165 TPS6116x JP2S USB-TO-GPIO
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slvu224tps61165evm-283tps61165hpa283+8 | |
GQ-RELAYS
Abstract: AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H AGQ20003
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003dia00dia079diagq-relays+8 | |
Matsushita polarized relay 7 pin
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H 2830-12
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matsushita polarized relay 7 pinagq20003agq20006agq20009+6 | |
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Contextual Info: GQ AGQ TESTING ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY GQ RELAYS (AGQ) FEATURES 7.20±0.3 .283±.012 10.60±0.3 .417±.012 5.20±0.2 .205±.008 10.60±0.3 .417±.012 7.20±0.3 .283±.012 Max.5.40 .213 mm inch • Compact flat body saves space With a small footprint of 10.6 mm (L) x |
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00dia079dia | |
AGQ2001H
Abstract: AGQ20024 AGQ2004H AGQ2101H AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ200r03 DSA00124.txt
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agq2001hagq20024agq2004hagq2101h+6 | |
Matsushita polarized relay
Abstract: AGQ20003 AGQ20006 AGQ20009 AGQ20012 AGQ2001H AGQ20024 AGQ2004H AGQ2101H matsushita power relay
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003dia00dia079diamatsushita polarized relay+9 | |
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Contextual Info: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009 |
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bas281od-80bas282bas283+1 | |
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Contextual Info: BZW30-283 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage350 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage283 I(PPM) Max.(A)Pk.Pulse Current6.0 |
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bzw30-283voltage350voltage283voltage500+1 | |
BAS282
Abstract: BAS282-GS08 BAS283 BAS281 BAS281-GS08 schottky DO-213
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bas281od-80d-7402503-mar-04+5 | |
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85500 transistor
Abstract: BAS281 BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80
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bas2812002/95/ec2002/96/ec18-jul-08+5 | |
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Contextual Info: 389 Robust Photoelectric Sensor RX SERIES FIBER SENSORS Related Information Amplifier Built-in •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide. P.283~ |
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pt-rx500pt-rx1000cx-400ex-10+4 | |
BAS281
Abstract: BAS281-GS18 85500 transistor BAS281-GS08 BAS282 BAS283
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bas2812002/95/ec2002/96/ec08-apr-05+5 | |
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Contextual Info: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 283 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2v/C25V = H-5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error. |
OCR Scan |
1sv283c2v/c25v0014g | |
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Contextual Info: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV 283 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error. |
OCR Scan |
1sv283c2v/c25v0014g | |
RX-LS200Contextual Info: 383 Adjustable Range Reflective Photoelectric Sensor RX-LS200 FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide.P.283~ |
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rx-ls200ex-10ex-20ex-30+6 | |
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Contextual Info: 403 U-shaped Photoelectric Sensor RT-610 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~ |
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rt-610rt-610-10/10r/50cx-400ex-10+6 | |
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Contextual Info: 361 Adjustable Range Reflective Photoelectric Sensor EQ-30 SERIES FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~ |
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eq-30cx-400ex-10ex-20+5 | |
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Contextual Info: 347 Threaded Miniature Photoelectric Sensor EX-30 SERIES Ver.2 FIBER SENSORS Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier Built-in ■■Sensor selection guide. P.283~ |
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ex-30ex-33ex-31rx-ls200+1 | |
27c diode toshiba
Abstract: 1SV283 847E C25V 6685E
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OCR Scan |
1sv283c2y/c25v0014g27c diode toshiba+3 | |