2815 RC Search Results

LM310

Abstract: lm210 voltage follower D2815 LM110 LM102 LM210
Contextual Info: TYPES LM110, LM210, AND LM310 VOLTAGE FOLLOWERS LINEAR INTEGRATED CIRCUITS D 2815. O CTOBER 1983 . JG D U A L -IN -L IN E P AC KA G E L M 1 10 . Input Current . . . 10 n A M ax . . JG OR P D U A L-IN -LIN E PAC KAG E LM 210. LM 310 Sm all-Signal Bandwidth . . . 20 M H z

2815EC

Abstract: 2812 EC SFC2805EC 2824 ec 2818 ec SFC2812EC SFC2815RC 2805ec SF.C 2805 EC sfc 2812
Contextual Info: Linear integrated circuits - Voltage regulators continued C ircu its intégrés linéaires - R égulateurs de tension t oper Case B o îtie r Type Type In p u t range Gamme entrée (1) <V> (suiteJ O u tp u t range Gamme sortie Line regulation Régulât, entrée

ST-12

Abstract: Scans-0017396
Contextual Info: RCA-3 I POWER AMPLIFIER The 31 is a power-amplifier tube of the three-electrode type for bat­ tery-operated radio receivers where economy o f filament-current drain is important. CHARACTERISTICS F i l a m e n t V o l t a g e D . C . .

2SC2802

Abstract: 2808 transistor n2818
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: User's Guide SNVA130A – January 2006 – Revised April 2013 AN-1411 LM3075 Evaluation Board 1 Introduction The LM3075 is a current mode synchronous buck controller. Use of synchronous rectification and pulseskipping operation at light load achieves high efficiency over a wide load range. Current mode control

APT20M11JLL

Abstract: 2815 rc
Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M11JFLL

Contextual Info: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

AD7191

Abstract: AD7191BRUZ
Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

ad7191

Abstract: tare ADR421 AD7191BRUZ
Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eighteen 128Mx4

lt 8232

Abstract: lt 6229 lt 7209 lt 8219 lt 6029 CSR13H106K LT 7242 lt 8224 lt 8217 LT 8215
Contextual Info: I C S R 13 M IL -C -3 9 0 0 3 /0 1 MallorY Solid Tantalum Capacitors GENERAL SPECIFICATIONS H erm etically Sealed G raded Failure Rates O perating Tem perature: -55°C to +125°C (W ith proper derating) Voltage Range: 6 to 1 0 0 W V D C @ 85°C Reverse Voltage (non-continuous):

c01 ic memory tv

Abstract: OD034
Contextual Info: FUJITSU MICROELECTRONICS 7fl D E | 37417^2 0003402 7 3 7 4 9 7 6 2 FUJIT SU M I C R O E L E C T R ON I C S F U JIT S U 78Ç 03402 T-46-23-12 MB 8128-10 MB 8128-15 M 0 S % 1 6 3 8 4 -:b IT : ? X S T A T I C 4R A Ñ D 0 M r# ACCESS ~ M EMORY^ 16384-BIT STATIC RANDOM ACCESS MEMORY WITH

k206

Abstract: 2J105K J155K 2sc 1203 ru 94vo
Contextual Info: specifically designedfor snubbera high currentapplications » HIGH CURRENT CARRYING CAPABILITY • THREE STANDARO CONFIGURATIONS ■ THREE MOUNTING METHODS ■ LOW ESR AND ESL ■ COMPACT DESIGN The 5MP2 SERIES is unque because of the combination o f p h ysica l and e le c tric a l c a p a b ilitie s it o ffe rs.

e1414

Abstract: siemens master drive circuit diagram Siemens pulse sequence
Contextual Info: SIEMENS Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface SDA 2526 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 256 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

Contextual Info: SIEMENS SDE 2526 MOS 1C Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus Interface with Extended Temperature Range Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E PROM • 256 X 8-bit organization • + 5 V supply voltage

pec 808

Contextual Info: ANALOG DEVICES 14-Bit 128 kSPS Complete Sampling ADC AD779* FEATURES AC and DC Characterized and Specified K, B, T Grades 128k Conversions per Second 1 MHz Full Power Bandwidth 500 kHz Full Linear Bandwidth 80 dB S/N+D (K, B, T Grades) Twos Complement Data Format (Bipolar Mode)

Contextual Info: ANALOG Dual Ultralow Vos Matched Operational Amplifier QP-207 DEVICES FEATURES • • • • • • • • Low Vo s .100/iV Max Offset Voltage M a tc h . 90^V Max

MCF52235

Abstract: DIS100 English grammar MCF522xx 007C MCF52231
Contextual Info: Freescale Semiconductor Reference Manual Addendum MCF52235RMAD Rev. 4, 01/2007 MCF52235 Reference Manual Errata by: Microcontroller Division This errata document describes corrections to the MCF52235 Reference Manual, order number MCF52235RM. For convenience, the addenda items are grouped by revision. Please check our website at

k7815

Abstract: K7630
Contextual Info: These units can be manufactured and tested to MIL-T-27/358. Contact factory for price and delivery information and appropriate parts numbers MIL-T-271358-01 thru MIL-T-271358-123 . PICO PA ST N UM BER SPECIFICATIONS • MIL.T-27:.

MCF5235

Abstract: MCF5235RM MCF5235RMAD 160QFP
Contextual Info: Freescale Semiconductor Reference Manual Addendum MCF5235RMAD Rev. 2.2, 05/2007 MCF5235 Reference Manual Errata by: Microcontroller Division This errata document describes corrections to the MCF5235 Reference Manual, order number MCF5235RM. For convenience, the addenda items are

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

CSR 6030

Abstract: MD 7144 md 8243 CSR 8311 ISO 8015 tolerance CSR 3012
Contextual Info: I CSR13 MIL-C-39003/01 Solid Tantalum Capacitors M a llo r Y GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates DC Leakage: At +25°C - See Table Limit. At +85°C - 10 x Table Limit. At +125°C - 12.5 x Table Limit. Capacitance Change Maximum:

Contextual Info: SG572288FG8RWUU August 7, 2007 Ordering Information Part Numbers Description Module Speed SG572288FG8RWDB 128Mx72 1GB , DDR2, 244-pin Mini-DIMM, Registered, ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0 SG572288FG8RWDG