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280N085 Abstract: 98747 HiperFET Power MOSFETS IXFN SOT227 Contextual Info: Advanced Technical Information IXFN 280N085 VDSS HiPerFETTM Power MOSFETs Single Die MOSFET ID25 RDS on trr ≤ 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C	Original	280n085 98747 hiperfet power mosfets ixfn sot227	PDF

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280N085

Abstract: 98747 HiperFET Power MOSFETS IXFN SOT227
Contextual Info: Advanced Technical Information IXFN 280N085 VDSS HiPerFETTM Power MOSFETs Single Die MOSFET ID25 RDS on trr ≤ 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C

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280n085 98747 hiperfet power mosfets ixfn sot227

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