280N055T Search Results

IXTV280N055T

Abstract: PLUS220SMD
Contextual Info: Preliminary Technical Information IXTV 280N055T IXTV 280N055TS TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTV 280N055T IXTV 280N055TS VDSS ID25 RDS on = 55 V = 280 A ≤ 3.2 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

280N055T

Contextual Info: Advance Technical Information Trench Gate Power MOSFET IXTF 280N055T VDSS ID25 = 55 V = 150 A Ω ≤ 3.5 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET 280N055T VDSS ID25 = 55 V = 150 A ≤ 3.5 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches