27M1 Search Results

photomultiplier

Abstract: dynode vk10k photomultiplier 8 stage Scans-0017376
Contextual Info: 2 7M 12 A EDISWAN 27MI2A NINE STAGE PHOTOMULTIPLIER G ENERAL The 27M12A is an improved version of the 27M12, having improved vibration performance. It is a nine stage photo­ multiplier for use in Aircraft, being especially resistant to shock and vibration. It has a blue sensitive caesium antimony

photomultiplier

Abstract: photomultiplier 8 stage JT INDUSTRIES Scans-0017376
Contextual Info: 27M13 EDISWAN 27MI3 SEVEN STAGE PHOTO-MULTIPLIER G EN ERA L The 27M13 is a seven stage Photo-multiplier having a blue sensitive cathode and twin anodes. Its sensitivity in typical operation is 2.5 amps/lumen. The cathode surface is of •<Caesium Antimony.

27M12

Abstract: dynode 27MI2 Scans-0017376
Contextual Info: 27 M12 E DISWAN 27MI2 NINE STAGE PHOTO-ELECTRIC MULTIPLIER G EN ER A L The 27M12 is a nine stage photo multiplier cell for use in aircraft, being especially resistant to shock and vibration. It has a blue sensitive caesium antimony coated cathode and is fitted with flying leads.

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS  TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: TJ8S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ8S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Contextual Info: TK90S06N1L MOSFETs Silicon N-channel MOS U-MOS-H TK90S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK60S06K3L MOSFET シリコンNチャネルMOS形 U-MOS  TK60S06K3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 6.4 mΩ (標準) (VGS = 10 V)

Contextual Info: TJ50S06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ50S06M3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 10.3 mΩ (標準) (VGS = -10 V)

Contextual Info: TJ20S04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ20S04M3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 17 mΩ (標準) (VGS = -10 V)

Contextual Info: TK8S06K3L MOSFET シリコンNチャネルMOS形 U-MOS  TK8S06K3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 43 mΩ (標準) (VGS = 10 V)

Contextual Info: TK15S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK15S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 13.7 mΩ (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

eaton el 198

Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Contextual Info: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com

MB 10F

Contextual Info: Mil Standard to Delevan Conversion Chart MS 14046 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 LT10K 128 129 130 131 132 133 134 135 136 137 MS 1537 18130 LT4K -30K 17 090 -32K 18 091 -34K 19 092 -36K 20 093 -38K 21 094 -40K 22 095 -42K 23 096 -44K 24 097 -47K 25 098 -51K 26

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: TK80S06K3L MOSFETs Silicon N-channel MOS U-MOS  TK80S06K3L 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TJ10S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ10S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) (2)

Contextual Info: TJ80S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ80S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V)

Contextual Info: TK40S10K3Z MOSFETs Silicon N-channel MOS U-MOS  TK40S10K3Z 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V)

Contextual Info: TJ30S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ30S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V)

Contextual Info: TJ60S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ60S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V)

Contextual Info: TK40S10K3Z MOSFETs Silicon N-channel MOS U-MOS TK40S10K3Z 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK8S06K3L MOSFETs Silicon N-channel MOS U-MOS TK8S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V)

Contextual Info: TJ50S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ50S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ.) (VGS = -10 V)