27JUL1 Search Results
27JUL1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED ALL C O P Y R IG H T - By FO R 4 6 3 2 P U B L IC A T IO N RIG HTS R E S ER VE D . - LOC D IS T CM 54 R E V I S I ON S LTR D E S C R IP T IO N REVISED PER DWN DATE KH SM 27JUL12 E C O - 12 - 0 0 7 8 0 7 |
OCR Scan |
27JUL12 L-156 | |
Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. ES C O R P O R A T IO N . REVISIONS 00 D E S C R IP T IO N R E V IS E D PER E C O - 10- 0 1 3 2 7 8 27JUL1 0 |
OCR Scan |
27JUL1 16FEB AR2000 CUS70MER | |
Contextual Info: BAS16WS-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 |
Original |
BAS16WS-V-G AEC-Q101 OD-323 18/10K 10K/box 08/3K 15K/box BAS16WS-V-G-18 BAS16WS-V-G-08 | |
Contextual Info: Features • Core • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash, |
Original |
ARM926EJ-Sâ 64-Kbyte 32-Kbyte 32-bit 24-bit 1032Aâ 27-Jul-11 | |
Contextual Info: SMD Power Inductor CDRH15D78/A Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 15.5 15.5 8.0 mm Max. • Product weight :4.0g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Qualification to AEC-Q200. |
Original |
CDRH15D78/A AEC-Q200. 500pcs high36-3266 27-Jul-11 | |
0512CDMCDS-2R2MC
Abstract: 0512CDMCDS-R47MC
|
Original |
0512CDMC/DS 4000pcs prof6-3266 27-Jul-12 0512CDMCDS-2R2MC 0512CDMCDS-R47MC | |
Contextual Info: SMD Power Inductor CDRH12D58/A Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 12.5 12.5 6.0 mm Max. • Product weight: 3.2 g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Qualification to AEC-Q200. |
Original |
CDRH12D58/A AEC-Q200. 500pcs h36-3266 27-Jul-11 | |
Contextual Info: SMD Power Inductor CDRR107 Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 11.0 11.0x 10.0 mm Max. • Product weight:2.7g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. • Qualification to AEC-Q200. |
Original |
CDRR107 AEC-Q200. 300pcs 27-Jul-11 | |
Contextual Info: 303139, 303140 Vishay Foil Resistors Models # 303139 and 303140 - Molded Surface Mount Space and Military Grade Resistors SMRxDZ with Screen/Test Flow in Compliance with EEE-INST-002, Tables 2A and 3A, Film/Foil, Level 1 and MIL-PRF-55182 FEATURES • Temperature coefficient of resistance (TCR): |
Original |
EEE-INST-002, MIL-PRF-55182 27-Apr-11 | |
HS817
Abstract: HS817B HS817G HS-817 Optocoupler with transistor HS817BG
|
Original |
HS817, HS817G, HS817B, HS817BG 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 HS817 HS817B HS817G HS-817 Optocoupler with transistor HS817BG | |
MKP capacitor
Abstract: power capacitor vishay
|
Original |
11-Mar-11 MKP capacitor power capacitor vishay | |
HS817G
Abstract: HS817 HS817B HS817BG Optocoupler with transistor
|
Original |
HS817, HS817G, HS817B, HS817BG 11-Mar-11 HS817G HS817 HS817B HS817BG Optocoupler with transistor | |
Contextual Info: PhMKDg., Triangular, LVAC www.vishay.com Vishay ESTA ESTAdry D-Type, LVAC Power Capacitors FEATURES • Self-healing technology • Over pressure tear-off fuse • Smallest available height for 50 kvar units: 210 mm + 68 mm for terminals • Excellent heat dissipation |
Original |
2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: 1N4448WS-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type designation LL4448, and the SOT-23 case |
Original |
1N4448WS-V DO-35 1N4448, LL4448, OT-23 IMBD4448-V AEC-Q101 OD-323 GS18/10K 10K/box | |
|
|||
AS1301EHT-ADJ
Abstract: AT91SAM9 SDRAM CP2122ST AS1301E dm9161aep board RFU14
|
Original |
SAM9G15-EK SAM9G25-EK SAM9G35-EK SAM9X25-EK SAM9X35-EK 1115Aâ 27-Jul-11 AS1301EHT-ADJ AT91SAM9 SDRAM CP2122ST AS1301E dm9161aep board RFU14 | |
MOSFET SMD MARKING CODEContextual Info: LH1525AT, LH1525AAB, LH1525AABTR www.vishay.com Vishay Semiconductors 1 Form A Solid-State Relay FEATURES SMD S S' • Extremely low operating current • High speed operation S 6 DC S' 5 4 • Isolation test voltage 5300 VRMS • Current limit protection |
Original |
LH1525AT, LH1525AAB, LH1525AABTR 2002/95/EC 2002/96/EC i179041-2 LH1525 2011/65/EU 2002/95/EC. MOSFET SMD MARKING CODE | |
DFSDM
Abstract: ARM926EJ-S AT91SAM 217-BA
|
Original |
ARM926EJ-STM 64-Kbyte 32-Kbyte 32-bit 24-bit 11052AS 27-Jul-11 DFSDM ARM926EJ-S AT91SAM 217-BA | |
Contextual Info: GSD2004W-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • Fast switching diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Material categorization: |
Original |
GSD2004W-V AEC-Q101 OD-123 GS18/10K 10K/box GS08/3K 15K/box GSD2004W-V-GS18 GSD2004W-V-GS08 | |
Contextual Info: BAV19W-V-G, BAV20W-V-G, BAV21W-V-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified • Material categorization: For definitions of compliance please see |
Original |
BAV19W-V-G, BAV20W-V-G, BAV21W-V-G AEC-Q101 OD-123 18/10K 10K/box 08/3K 15K/box BAV19W-V-G | |
Contextual Info: WSL3637 Vishay Dale Power Metal Strip Resistors, Low Value down to 0.001 Ω , Surface Mount, 4-Terminal FEATURES • 4-Terminal design allows for 0.5 % resistance tolerance down to 0.003 Ω • Ideal for all types of current sensing, voltage division and pulse applications including |
Original |
WSL3637 2002/95/EC 18-Jul-08 | |
bav21w-v-gs08Contextual Info: BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • These diodes are also available in other case styles including: the DO-35 case with the type |
Original |
BAV19W-V, BAV20W-V, BAV21W-V DO-35 BAV19 BAV21, BAV100 BAV103, OT-23 BAS19 bav21w-v-gs08 | |
1n4448w-vContextual Info: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the |
Original |
1N4448W-V DO-35 1N4448, LL4448, OT-23 IMBD4448 AEC-Q101 OD-123 GS18/10K 10K/box 1n4448w-v | |
Contextual Info: BAS16D-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 • AEC-Q101 qualified • Material categorization: |
Original |
BAS16D-V OT-23 BAS16 AEC-Q101 OD-123 GS18/10K 10K/box GS08/3K 15K/box BAS16D-V-GS18 | |
EIGHT MOSFET ARRAYContextual Info: COMPANY CONFIDENTIAL LX23108L- 8 Port LED Driver Datasheet Microsemi’s LX 23108LILQ is an 8Port LED Driver used to drive LED strings. The LX23108LILQ has eight internal Current Limiters with high bandwidth PWM controls used to maintain the required LED current. |
Original |
LX23108L- 23108LILQ LX23108LILQ 24132ILQ LX24132ILQ LX23108LILQs. PD24108L LX24108L EIGHT MOSFET ARRAY |