27A ZENER DIODE Search Results

Zener diode 18A

Abstract: ZENER 18A 27a zener diode diode zener t 27a
Contextual Info: SILICON DIFFUSED TYPE ZENER DIODE 2Z16A/18A/27A Unit in m m TRANSIENT SUPPRESSOR FEATURES : . Peak Reverse • Power Dissipation P R S M = 6 0 0 W / l m s e c expo. . Zener Voltage : V ^ = 1 6 — 27V . Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL

gz zener

Abstract: 39A zener diode RZ33A 6AR6 GZ33AR GZ47A GZ27AR 34 GZ gz 77 diodes 415 39a
Contextual Info: y zener diodes diodes zener THOMSON-CSF Type» Vc min 10 W / Tease GZ 6A, GZ 8A, GZ 10A, GZ 12A, GZ 15A, GZ 18A, GZ 22A, GZ 27A, GZ 33A, GZ39A, GZ 47A, GZ 56A, GZ68A, GZ 82A, GZ 10B, GZ 12B, GZ 15B, GZ 18B, R (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R)

bzv46

Abstract: BZV48C BZV48C30 BZV48C10 BZV48C39 bzv48c120 BZV48C13 BZV48C8V2 BZV48 BZV48C11
Contextual Info: ^6 FAGOR ELECTRONICS 3459325 FAGOR ELECTRONICS \ dF | 3 4 S ì 32S 0000533 2 | 98 D 00233. BZV48C8V2 FAGOR ^ BZV48C33V T'—/ / —I 5 W Zener Diodes DO-27A Plastic Dimensions in nun. (inches) s 8o §o Voltage 8.2 to 33 V. Power S.0W e •nig M -H s.! (0.374)

IN5359b

Abstract: in5353b IN5350B in5351b IN5355B 1N53638 IN5361B IN5345 1n53478 in5364B
Contextual Info: FAGOR "t ö ELECTRONICS 3459325 DDOoaa? □ |~ FAGOR E L E C T R O N IC S 98D 00237 1NS345 . 1N5364 FAGOR 9 T - H- ' S' 5 W Zener Diodes DO-27A Plastic Dimensions in mm. (inches) S § mis’ sU •H -H S ji t Voltage 8.7 to 33 V. I 1 (0.374) < 9.S ,

STW28NK60Z

Abstract: W28NK60Z
Contextual Info: STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID PW STW28NK60Z 600 V < 0.185 Ω 27 A 350 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY

W28NK60Z

Abstract: STW28NK60Z
Contextual Info: STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID PW STW28NK60Z 600 V < 0.185 Ω 27 A 350 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY

27a zener diode

Abstract: Mark 27A Hitachi DSA002788
Contextual Info: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-443A Z Rev 1 Features • HZM27FA has four devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

Zener 21V

Abstract: 27a zener diode Hitachi DSA00776 HZM27FA zener diode 2.1v
Contextual Info: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-443A Z Rev 1 September 1996 Features • • HZM27FA has four devices, and can absorb external + and -surge. MPAK Package is suitable for high density surface mounting and high speed assembly.

27a zener diode

Abstract: diode zener t 27a Hitachi DSA00776 ADE 352 HZM27WA SC-59A
Contextual Info: ADE-208-352 Z HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb Rev. 0 May.1995 Features Outline • HZM27WA has two devices, and can absorb external + and −surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HZM27FA

Contextual Info: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-443A Z Rev 1 September 1996 Features • HZM27FA has four devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HZM27WA

Abstract: SC-59A 27a zener diode ADE-208-352A
Contextual Info: HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-352A Z Rev 1 Feb. 1999 Features • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA002743

Contextual Info: HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-352A Z Rev 1 Feb. 1, 1999 Features • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Zener 21V

Abstract: zener diode 182 27a zener diode diode zener t 27a
Contextual Info: HZM27WA-Silicon Epitaxial Planar Zener Diode for Surge Absorb Features Outline s • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. g -3

diode zener t 27a

Abstract: Zener 21V 27a zener diode
Contextual Info: ADE-208-352 Z HZM27WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Rev. 0 May. 1995 Outline Features • HZM27WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

33a zener

Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

zener 4c3

Abstract: zener gdz zener gdz marking
Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

zener 6c2

Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Contextual Info: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

MA3270

Abstract: MAZK270D C7031
Contextual Info: MA111 Zener Diodes Composite Elements MAZK270D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 Parameter Symbol Rating Unit Average forward current

marking code 6C8

Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

Contextual Info: HZM27FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-443A Z R ev 1 Features • HZM27FA has four devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

GLZ56

Abstract: zener diodes 5.1a 33b 56
Contextual Info: GLZ2.0~GLZ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA. • In compliance with EU RoHS 2002/95/EC directives

zener 4c3

Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Contextual Info: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF

1N821-1N829

Abstract: 250ca 1N SERIES DIODE zener diode 1n 1NS21 zener 7.5 B 48 Zener Diodes series 1N
Contextual Info: AM ER I C A N PO WE R D E V I C E S S'JE » • 07373.3S O O O D G S b 777 * A P » T V / - 1N821-1N829 1N821A-1N829A americani S E M IC O N D U C T O R S power devices, inc. 500 mW temperature compensated zener reference diodes MECHANICAL CHARACTERISTICS

Z02W27V

Abstract: zener ph 015
Contextual Info: SEM ICONDUCTOR Z02W2.0V-36V TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CO N ST A N T V O L T A G E REG U LATIO N A PPLICATIO N. RE FE RE N CE V O L T A G E A PPLICATION. FEA T U RE S L B L DIM • Small Package : SOT-23 • Normal Voltage Tolerance About ±2.5% .