27A MARKING CODE Search Results

035H

Abstract: IRFPE30 IGBT tail time
Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: D 951-86 ir igbt
Contextual Info: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30
Contextual Info: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

035H

Abstract: IRFPE30
Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30
Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

f1010

Abstract: 555 triangular wave B-989
Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

035H

Abstract: IRFPE30 diode Marking code WT
Contextual Info: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

DIODE 27A

Abstract: marking 27A DIODE 035H IRFPE30 IRG4PC50UDPBF 55A TO-247AC t1624
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRF6715MPbF

Abstract: IRF6715MTR1PBF IRF6715MTRPBF
Contextual Info: PD - 96117A IRF6715MPbF IRF6715MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V

marking code 27a

Abstract: IRF6715MPbF IRF6715MTR1PBF IRF6715MTRPBF
Contextual Info: PD - 96117B IRF6715MPbF IRF6715MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible 

Contextual Info: PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible 

96117C

Abstract: IRF6715MTR1PBF IRF6715MTRPBF
Contextual Info: PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V l Dual Sided Cooling Compatible 

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

035H

Abstract: IRFPE30 IRG4PC40
Contextual Info: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

A110D

Abstract: IRFP27N60KPBF transformer 480v to 60v
Contextual Info: PD - 95479 SMPS MOSFET IRFP27N60KPbF Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple

IRG4PC50wpbf

Abstract: 035H IRFPE30
Contextual Info: PD - 94858 IRG4PC50WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

Contextual Info: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)

035H

Abstract: IRFPE30
Contextual Info: PD - 94911 IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF

IRG4PC50

Abstract: IRG4PC50UPBF 035H
Contextual Info: PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than