27JUL07 Search Results

500x3

Abstract: MR500
Contextual Info: 107-68690 Packaging Specification 27Jul07 Rev E EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE 1. PURPOSE 目的 Define the packaging specifiction and packaging method of EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE. 订定 EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE 产品之包装规格及包装方式。

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S - 2 - R E V IS IO N S RESERVED. 50 LTR G3 D E S C R IP T IO N REV PER DATE 27JUL07

XU1009-BD

Abstract: RF Transistor Selection 26TX0555 26TX
Contextual Info: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain

ups lm339

Abstract: MPT3055E CAT525WI-T1 md2001
Contextual Info: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION „ Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications „ Independent reference inputs

SA2M

Abstract: SA2J-E3/61T JESD22-B102D J-STD-002B
Contextual Info: New Product SA2B thru SA2M Vishay General Semiconductor Surface Mount Glass-Passivated Recitifiers FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

1N6478

Abstract: 1N6484 DO-213AB JESD22-B102D J-STD-002B
Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop

DO214BA

Abstract: DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

BYS459-1500

Abstract: BYS459B-1500 BYS459F-1500 JESD22-B102D J-STD-002B
Contextual Info: BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time • Low switching loss, high efficiency • Low forward voltage drop

JESD22-B102D

Abstract: J-STD-002B 89012
Contextual Info: New Product M30L40C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation

2cjqh

Abstract: 20CJQ060PBF 5M MARKING CODE SCHOTTKY DIODE 40HFL40S02 EIA-541 IRFP460
Contextual Info: 20CJQ060PbF Vishay High Power Products Schottky Rectifier FEATURES • Small foot print, surface mountable Available Base common 4 • Low profile RoHS* • Very low forward voltage drop COMPLIANT • High frequency operation SOT-223 2 Common cathode Anode

MBRF20H150CT

Abstract: JESD22-B102D J-STD-002B MBR20H150CT
Contextual Info: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

DTV32

Abstract: DTV32B DTV32F JESD22-B102D J-STD-002B
Contextual Info: New Product DTV32, DTV32F & DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability • Very fast reverse recovery time • Fast forward recovery time

JESD22-B102D

Abstract: J-STD-002B MBR10H150CT MBRF10H150CT SB10H150CT-1
Contextual Info: MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

DTV56

Abstract: DTV56B DTV56F JESD22-B102D J-STD-002B DTV56-E3
Contextual Info: DTV56, DTV56F & DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability • Very fast reverse recovery time • Fast forward recovery time 2 2 1 1 DTV56

1kl38

Abstract: GD52 diode 8631 G37 IC MCP6031COMP AN1297 ORCAD PSPICE BOOK GD16 MCP6031 transistor k 316M
Contextual Info: AN1297 Microchip’s Op Amp SPICE Macro Models Author: Yang Zhen Microchip Technology Inc. Ron Wunderlich (Innovative Ideas and Design) INTRODUCTION The SPICE macro models for Microchip’s operational amplifiers (op amps) aid in the design and analysis of

MBRF20H200CT

Abstract: JESD22-B102D J-STD-002B MBR20H200CT SB20H200CT-1
Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

1.4037

Abstract: AN609 Si7844DP 131135
Contextual Info: Si7844DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MOSFET 4166

Abstract: 7447 7447 data sheet 69249 R 7447 details 4166 8449 DATA SHEET 7447 data sheet of 7447 datasheet 7447
Contextual Info: Si7846DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74264

Abstract: 38.0038 AN609 Si7848DP
Contextual Info: Si7848DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION ̈ Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications ̈ Independent reference inputs

Contextual Info: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION „ Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications „ Independent reference inputs

BYG24D

Abstract: BYG24J JESD22-B102D J-STD-002B 175KW BYG24G
Contextual Info: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time

BYG21M

Abstract: BYG21K JESD22-B102D J-STD-002B BYG21KH
Contextual Info: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time

BYM10-1000

Abstract: BYM10-50 DO-213AB GL41A GL41Y BYM 260
Contextual Info: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement