278000 EPROM Search Results

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

AT49BV6416

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

SA97

Abstract: AT49BV642D AT49BV642DT AT49BV642D-70TU
Contextual Info: Features • • • • • • • • • • • • • • • • • Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Architecture – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout

SA97

Abstract: AT49BV640D AT49BV640DT SA1117
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

AT49BV640D

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

SA93

Abstract: SA97 AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

0004h

Abstract: SA124 SA97 AT49BV642D AT49BV642DT
Contextual Info: Features • • • • • • • • • • • • • • • • • Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Architecture – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout

AT49BV640T

Abstract: 21FFFF
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

SA97

Abstract: AT49BV6416C AT49BV6416CT
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

3B8000

Abstract: SA97 sa92
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV642DT

Abstract: AT49BV642D-70TU AT49BV642DT-70TU AT49BV642D
Contextual Info: Features • • • • • • • • • • • • • • • • • Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Architecture – One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout

SA128

Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

AT49BV640D

Abstract: AT49BV640DT SA1117
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

SA97

Abstract: AT49BV6416 AT49BV6416T AT49BV642D AT49BV642
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV6416

Abstract: AT49BV6416T
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT49BV6416-70TU

Abstract: SA97 AT49BV6416 AT49BV6416T SA112
Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

pa00555

Contextual Info: Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.6V Read/Write • High Performance • • • • • • • • • • • • • – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout

AT52BC6402A

Abstract: AT52BC6402AT 3B8000
Contextual Info: Stack Module Features • • • • 64-Mbit Flash + 16-Mbit PSRAM Power Supply of 2.7V to 3.1V Data I/O x16 66-ball CBGA Package: 8 x 11x 1.0 mm 64-Mbit Flash Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.1V Read/Write • High Performance

AT52BC6402A

Abstract: AT52BC6402AT 66C6 sa103 transistor
Contextual Info: Stack Module Features • • • • 64-Mbit Flash + 16-Mbit PSRAM Power Supply of 2.7V to 3.1V Data I/O x16 66-ball CBGA Package: 8 x 11x 1.0 mm 64-Mbit Flash Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.1V Read/Write • High Performance

AT52BR6408A

Contextual Info: Stack Module Features • • • • 64-Mbit Flash + 8-Mbit SRAM Power Supply of 2.7V to 3.1V Data I/O x16 66-ball CBGA Package 64-Mbit Flash Features • 64-megabit 4M x 16 Flash Memory • 2.7V - 3.1V Read/Write • High Performance • • • • •

V850E/IA1

Abstract: sim800 cosmo 3023 GHS multi CCV850 Building Applications RX-OSEK850 DF7051 V800 v850 3357 274096 osek standard v850 rx850
Contextual Info: V800 Series Development Environment V800 Series V800Series 32-Bit RISC Microcontrollers V800 Series Development Environment The V800 Series development environment encompasses a range of tools designed to enable smoother, faster, and more precise development

Contextual Info: Am29LV642D Data Sheet For new designs, S29GL128N supersedes Am29LV642D and is the factory-recommended migration path for this device. Please refer to the S29GL128N datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced

25022

Abstract: S29GL128N S29GL-N
Contextual Info: Am29LV642D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29GL128N supersedes Am29LV642D. Please refer to the S29GL-N family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes