2764 EEPROM Search Results

PROXIMITY SENSING USING HMC1501

Abstract: HMC1501 lvdt sensor differential magnetoresistive sensor low cost vibration sensor magnetic sensor circuit diagram Throttle Position Sensor magnetic position sensor Designing With Magnetoresistive Sensors linear sensor array encoder
Contextual Info: A2.4 LINEAR POSITION SENSING USING MAGNETORESISTIVE SENSORS By Bratland, Tamara Product Line Manager, Magnetic Sensors Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota, 55441 United States of America Phone: 763-954-2992, fax: 763-954-2764

d774

Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Contextual Info: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

2864 eeprom

Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
Contextual Info: DS1225Y DALLAS DS1225Y SEMICONDUCTOR 6 4 K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 - 1 A12 1 • Data is automatically protected during power loss A7 • Directly replaces 8K x 8 volatile static RAM or EEPROM

atmel 93c66

Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Contextual Info: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования

2864 eeprom

Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
Contextual Info: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

2864 eeprom

Abstract: 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G
Contextual Info: D S 1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC 1 Al2 • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or

DS1225Y

Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
Contextual Info: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles

DS1225Y

Contextual Info: DS 1225Y DALLAS SEMICONDUCTOR D S1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data is automatically protected during power loss • Directly replaces 8 K x 8 volatile static RAM or EEPROM 1 28 § VCC A12 I 2 27 § WE A7 I 3 26 g NC A6 I « 25 B A8

DS1220AB-85

Abstract: DS1220AD-85 DS1225 DS1225AB DS1225AB-70 DS1225AD ICC01 2764 EPROM EEPROM 2864 ram DS1225
Contextual Info: DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles

Contextual Info: DS12250/E DALLAS DS1225D/E 64K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 8K EEPROM x 8 volatile static RAM or • Low-power CMOS

Contextual Info: DS1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SR A M PIN ASSIGNMENT • Data retention in the absence of V c c • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC I 1 2* 1

stag orbit 32 device list

Abstract: orbit 32 Stag Programmer Orbit battery connector
Contextual Info: Operating Manual for the Orbit 32 Portable Programmer Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Hertfordshire, AL7 1LT, UK Tel +44 1707 332148 Fax +44 1707 371 503 Email: sales@stag.co.uk www.stag.co.uk 803 1142 Issue 3 CIS 2367 Contents

DS1225Y

Contextual Info: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM

IC 2864 eeprom

Abstract: DS1225Y
Contextual Info: D S 1225Y DALLAS SEMICONDUCTOR F E AT URE S D S 12 2 5 Y 64K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM

Contextual Info: NEC NEC Electronics Inc. pPD28C256 32,768 X 8-Bit CMOS EEPROM Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated with an ad­ vanced CMOS process for high performance and low

dallas ds1225y

Abstract: dallas ds 1225y EEPROM 2864 DS1225Y DS1225Y-150 2764 EEPROM DS1225 DS1225Y-170 DS1225Y-200 EEPROM 2864 CMOS
Contextual Info: DS 1225Y DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 8K x 8 volatile static RAM or EEPROM

Nippon capacitors

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Order this document by HC705C5TSAD/D Rev. 1 MC68HC705C5 Addendum to MC68HC705C5 8-Bit Microcontroller Unit Technical Summary This addendum supplements the M C 68H C 705C 5 Technical Summ ary with additional information

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC I NC * 25 1 AS 24 1 A9 • Over 10 years of data retention • Standard 28-pin JEDEC pinout • Available in 150ns, 170ns, or 200ns read access

DS1225Y-200

Abstract: DS1225Y-200IND DS1225Y DS1225Y-150IND DS1225Y-150 DS1225Y-170 ds1225
Contextual Info: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2864 eeprom

Abstract: 2764 eprom DS1225Y Ram 2864 DS1225Y-150 DS1225Y-170 DS1225Y-200 2764 eprom PINOUT 2864 ram
Contextual Info: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

DS1225Y

Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
Contextual Info: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM