272WB Search Results

TRANSISTOR CW 7805

Abstract: AN3789 SAC305 laser soldering CELSTRAN CW 7805 MRF6V2300N pa66 fr PA66-GF60 sac305 thermal conductive 270WB
Contextual Info: Freescale Semiconductor Application Note AN3789 Rev. 0, 3/2009 Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Rowan, Lu Li, Quan Li, Eddie Mares, and Leonard Pelletier INTRODUCTION This application note provides Freescale Semiconductor

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

ATC100B102JT50XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

95Sn5Sb

Abstract: HP 3478A Copper Alloy C151 bts 2140 AN1907 C101 C102 C151 SAC305 ausi die attach
Contextual Info: Freescale Semiconductor Application Note AN1907 Rev. 3, 5/2009 Solder Reflow Attach Method for High Power RF Devices in Over - Molded Plastic Packages By: Keith Nelson, Quan Li, Lu Li, and Mahesh Shah INTRODUCTION TERMINOLOGY DEFINITIONS The purpose of this application note is to provide

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

TO272WB-16

Abstract: TAA2
Contextual Info: DATUM PLANE H DETAIL ”Y” r I i c1- J Jí Í 1 \i 1 ÍÍ ] / \ l / A i A2 t * T — E2 — Y FREESCALE SEMICONDUCTOR, INC. ALL RIGHTS RESERVED. TITLE: MECHANICAL OUTLINE TO—272WB—16 GULL PLASTIC SPECIAL * SEATING PLANE PRINT VERSION NOT TO SCALE

ATC200B103KT50XT

Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

PPS GF60

Abstract: bts 2140 1b data sheet CELSTRAN cw 7805 MRF6V2300 AN3789 TRANSISTOR CW 7805 pa66 - fr pcb bts 2140 pa66 fr
Contextual Info: Freescale Semiconductor Application Note AN3789 Rev. 0, 3/2009 Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Rowan, Lu Li, Quan Li, Eddie Mares, and Leonard Pelletier INTRODUCTION This application note provides Freescale Semiconductor