271113 Search Results

power transistor tsd 4m

Abstract: 12 x 12 fbga thermal resistance
Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM

CY7C1071DV33

Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 83.3 MHz ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power

M430F1232

Abstract: rtd pt-100 amplifier circuit bel 187 transistor npn pnp transistor data sheet bel 188 pt100 temperature sensor schematic msp430 pt100 temperature sensor schematic bel 187 NPN TRANSISTOR 43a Hall Effect Magnetic Sensors circuit diagram of wireless door lock system amplifier 5.1 surrounding system circuit diagram
Contextual Info: TEAM LRN Analog and Digital Circuits for Electronic Control System Applications TEAM LRN Analog and Digital Circuits for Electronic Control System Applications Using the TI MSP430 Microcontroller by Jerry Luecke AMSTERDAM • BOSTON • HEIDELBERG • LONDON

m51257

Abstract: M51257L M5125 271113 M51257-L
Contextual Info: INTEL CORP UP/PRPHLS 2DE 4fl2bl75 OOfilTST 0 • intel '. T ^ Z 3 '0 b M51257/M51257L HIGH SPEED 256K x 1-BIT CM OS STATIC RAM Standard Military Drawings #5962-88725and5962-88544* ■ Battery Back-Up Operation — 2V Data Retention (M51257L Versions) ■ Single 5V (±10% ) Power Supply

Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA Functional Description The CY7C1079DV33 is a high performance CMOS Static RAM

nzm4 -XR

Abstract: NZM10 NZMN3-AE400 nzm3 -XR NZMN3-AE630 moeller VDE 0660 nzm1 60947-3 NZMN4-AE630 moeller circuit breaker nzm3 NZMH3-AE400 moeller IZM 324 - 2000
Contextual Info: Product Range Catalogue | 2006 Switching, protection, communication – the new NZM1-4 circuit-breaker series up to 1600 A Reliable and safely controlling, switching and managing power. In industry, in buildings and in machine construction. Innovative protection concepts.

Condor GNT

Abstract: GPFC110-15G SW100-05C GLC50-3.3G GPFC160-24 GLC75D TS9996-ND Wm2101 CISPR22 VDE0871
Contextual Info: Switch Mode DC Power Supplies The standard version power supply for data processing and control applications. General Features: • Cost Effective Power Source • 2 Year Warranty - 100% burn-in, test and inspection Safety Specifications: • For safety ratings and certifications, please

Contextual Info: CY7C1079DV33 32-Mbit 4 M x 8 Static RAM 32-Mbit (4 M × 8) Static RAM Functional Description Features • High Speed ❐ tAA = 12 ns ■ Low Active Power ❐ ICC = 250 mA at 12 ns ■ Low CMOS Standby Power ❐ ISB2 = 50 mA The CY7C1079DV33 is a high performance CMOS Static RAM

CY7C1071DV33

Abstract: DSA0016916 CY7C1071DV33-12BAX
Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM 32-Mbit (2 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA

CY7C1071DV33-12BAX

Contextual Info: CY7C1071DV33 32-Mbit 2M x 16 Static RAM Features • High speed ❐ tAA = 12 ns Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention

CY7C1071DV33

Abstract: AN1064
Contextual Info: CY7C1071DV33 32-Mbit 2 M x 16 Static RAM Features • High speed ❐ tAA = 12 ns Low active power ❐ ICC = 250 mA at 12 ns ■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention