27.0 ECS Search Results

PAE1

Abstract: ECM010 2110 - 2170mhz power module
Contextual Info: PRELIMINARY DATA SHEET ECM010 WCDMA 3.5V POWER AMPLIFIER MODULE Features Features WCDMA Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 27.0 dBm WCDMA Power 40% WCDMA Efficiency Power-down Capability Quiescent Current Control Better Efficiency at Low Power

ECS-VXO-95

Contextual Info: ECS-VXO-93/VXO-95 SERIES SMD VCXO'S The ECS-VXO-93 3.3V and ECS-VXO-95 (5.0V) are miniature VCXO'S voltage controlled crystal oscillators with tri-state in a ceramic SMD package. The low profile package is ideal for today's advanced portable PC and instrumentation

ECS-VXO-73/VXO-75

Abstract: ECS-VXO
Contextual Info: ECS-VXO-73/VXO-75 SERIES SMD VCXO'S The ECS-VXO-73 3.3V and ECS-VXO-75 (5.0V) are miniature VCXO'S voltage controlled crystal oscillators with tri-state in a ceramic SMD package. The low profile package is ideal for todays advanced portable PC and instrumentation applications.

Contextual Info: ECS-VXO-73/VXO-75 SERIES SMD VCXO'S The ECS-VXO-73 3.3V and ECS-VXO-75 (5.0V) are miniature VCXO'S voltage controlled crystal oscillators with tri-state in a ceramic SMD package. The low profile package is ideal for todays advanced portable PC and instrumentation applications.

MIL-STD-1553 dbit

Abstract: dbit 70 4s DBIT 49/Microspire dbit 70 4s DBIT 70 7P400 smd code marking LP Microspire dbit 70 4s
Contextual Info: 21 MIL-STD 1553 Interface Transformers - DBIT x 3 S • • • • ECSS-Q-70-02 Open-circuit impedance greater than 3 kΩ 4 kΩ typical value from 75 KHz to 1 MHz Frequency range 75 KHz to 1 MHz Operating temperature range : - 55 °C to + 125 °C Weight : 3 to 3.5 grams

escc 3201

Abstract: dbit 70 4s DBIT Microspire SMD Microspire Microspire dbit 70 4s Microspire transformer MIL-STD-1553 dbit P400 S400
Contextual Info: 21 MIL-STD 1553 Interface Transformers - DBIT x 3 S ECSS-Q-ST-70-02C Applied standards : ESCC 3201 generic specification for space products • Open-circuit impedance greater than 3 kΩ 4 kΩ typical value from 75 KHz to 1 MHz • Frequency range 75 KHz to 1 MHz

QFN20

Abstract: RF3865 RF3865PCK-410 RF3865PCK-411 linear amplifier P1dB 36dBm
Contextual Info: RF3865 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features „ „ „ WiMAX LNA or Linear Driver CDMA, PCS, ECS, UMTS LNA WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC NC 1 15 NC NC 2 14 NC 13 RF OUT RF IN 3 NC 4 12 NC AC GND1 5

RF3866PCK-411

Abstract: QFN20 RF3866 RF3866PCK-410
Contextual Info: RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features „ „ „ First Stage WiMAX LNA/Linear Driver CDMA, PCS, ECS, UMTS LNA WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC NC 1 15 NC NC 2 14 NC 13 RF OUT RF IN 3 NC 4 12 NC

eccobond 276

Abstract: 660-014 GLENAIR ITS g41 06 sp 16
Contextual Info: MIL-DTL-38999 Cylindrical Connectors Hermetics, Filters, Environmentals, FeedThrus, Lanyards, Sav-Cons and More! United States  United Kingdom  Germany  France  Nordic  Italy 1st Edition • September, 2008  Spain  Japan 1000 Hour Grey

RTS522

Contextual Info: 50 Ohm Coaxial Cable P/N 532101 Conductor Shield 1 Dielectric Outer Jacket Shield 2 Marker Tape CONSTRUCTION DETAILS PHYSICAL CHARACTERISTICS Conductor: 22 AWG stranded silver-plated copper Dielectric: High temperature fluoropolymer Shield 1: Aluminum tape

CTS-122

Abstract: CHR122 CSS122
Contextual Info: 50 Ohm Coaxial Cable P/N 421201 Conductor Shield 1 Dielectric Outer Jacket Shield 2 Marker Tape CONSTRUCTION DETAILS PHYSICAL CHARACTERISTICS Conductor: 12 AWG stranded silver-plated copper Dielectric: High temperature fluoropolymer Shield 1: Aluminum tape

MPCI 233

Abstract: smd code 842 k67 marking SMD INDUCTOR Marking Code smd marking code 710 code 842 8 PIN SMD H01 escc 3201008 code 842 8 PIN SMD Microspire msci
Contextual Info: 30 • With or without tab terminations • Terminations with tin-lead coating • Q factor ≥ 30 at 1 MHz • SRF ≥ 8 MHz • ∆ L/L ± 1000 ppm / °C • Materials meet UL94-V0 rating • Weight : 0.12 gram 1.5 1.25 1.0 0.85 0.70 0.62 0.55 0.49 0.44

Microspire msci

Abstract: code 842 8 PIN SMD smd marking code 710 marking code WW SMD k67 marking Microspire smd code 842 233K67 marking k42 code 842 8 PIN SMD H01
Contextual Info: 30 • With or without tab terminations • Terminations with tin-lead coating • Q factor ≥ 30 at 1 MHz • SRF ≥ 8 MHz • ∆ L/L ± 1000 ppm / °C • Materials meet UL94-V0 rating • Weight : 0.12 gram 1.5 1.25 1.0 0.85 0.70 0.62 0.55 0.49 0.44

EC3H06B

Abstract: TA248
Contextual Info: Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions unit:mm 2183 [EC3H06B] 0.15 0.15 0.05 1 2 0.05 3 0.5 1.0 0.4 0.05 0.25 0.35 0.2 0.25 • Low noise : NF=0.9dB typ f=1GHz .

16 pin 4x4 amplifier gsm

Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
Contextual Info: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE

EC3H06B

Abstract: 0/a95 831 0198
Contextual Info: 注文コード No. N 6 5 2 4 EC3H06B 三洋半導体データシート N EC3H06B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅 , 発振用 ・低雑音である：NF=0.9dB typ（f=1GHz）

ECP050D-500

Contextual Info: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters

GRM1555C1H5R6CZ01E

Abstract: en18 ECST1AZ475R GRM155R71E103KA01 QFN-16 TAJA106M006R FR4 Prepreg ATT QFN-16 sky65006 TDK common mode choke notes
Contextual Info: data sheet SKY65006-348LF: 2.4–2.5 GHz WLAN/Zigbee Power Amplifier Features Block Diagram 2.4–2.5 GHz operation WLAN/Zigbee® applications l Advanced GaAs HBT process l Integrated output power detector and F2 filter l Low voltage positive bias supply 3.3 V

Contextual Info: DATA SHEET SKY65006-348LF: 2.4–2.5 GHz WLAN/Zigbee Power Amplifier Features Block Diagram ฀2.4–2.5฀GHz฀operation ฀WLAN/Zigbee®฀applications l฀Advanced฀GaAs฀HBT฀process l฀Integrated฀output฀power฀detector฀and฀F2฀filter

16l soic8

Abstract: qfn16 thermal resistance
Contextual Info: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters

Contextual Info: Ordering number : ENN6573 NPN Epitaxial Planar Silicon Transistor EC3H01B ISABlYOi VHF Band Low-Noise Amplifer and OSC Applications Features Package Dimensions • L ow noise : N F = 1 .8 d B typ f= 1 5 0 M H z . unit : mm • H igh g a in : | S 2 1 e 12= 16d B typ (f= l5 0 M H z ).

74368

Abstract: 7436 ic data sheet circuit diagram of 7436 ic ENN7436 SBFP540B 74367 9853 1331 br 8550 NPN
Contextual Info: Ordering number : ENN7436 SBFP540B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • • • Low noise : NF=0.9dB typ f=1.8GHz . High cut-off frequency : fT=20GHz typ (VCE=1V).

403-130

Abstract: IC 7436 cbc 547 CBC 557 CBC 307 circuit diagram of 7436 ic BR 8550 transistor br 8550 NPN IC 7436 datasheet TRANSISTOR cBC 415
Contextual Info: Ordering number : ENN7436 SBFP540B NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • • Low noise : NF=0.9dB typ f=1.8GHz . unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V).

sanyo 1042

Abstract: 313-105 EC3H01B TA248 sanyo 982
Contextual Info: Ordering number : ENN6573 EC3H01B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications Features • • • Low noise : NF=1.8dB typ f=150MHz . High gain : S21e2=16dB typ (f=150MHz).