26NOV2009 Search Results

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC GP R 1G H T S R E S E RV E D. REV 1S I O N S DIST 00 P LTR DESCRIPTION DATE 26NOV2009 REV PER E C R - 0 9 - 0 2 5 9 2 0

Contextual Info: Alle Rechte vorbehalten/ M l rights reserved 2 A 3 4 5 6 31.09 max. • 1i - o0. o s PCB Layout, component side thickness 1.6 mm min. _ 2,76 Ma t i n g f a c e a c c o r d i n g t o CECC 7 5 3 0 1 - 8 0 2 Nut t h r e a d — Max . Temper at ur e 09551663812.741

Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 20,1 16,6 31 max . A 1,2 5,52 | 0 .05 02,1 -0.05 n S ! J 1 CM ro IL 3,85 2,89. 16, 5 PCB Layout, component side (thickness 1.6 mm min. _ Mating face acccording to CECC 75301-802 1— !- O O.IO All contacts

Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 20,1 16, 6 31 max. A 1,2 5,52 | 0.05 Pv H to CM to 0 2 , 1 - 0.05 3,85 2,89 16,6 Mating face acccording to CECC 75301-802 PCB Layout, component side thickness 1.6 mm min. m. 1— r> O 20 0.10 All contacts

STP78N75F4

Abstract: STD78N75F4 MJ 5015
Contextual Info: STD78N75F4 STP78N75F4 N-channel 75 V, 0.0092 Ω, 78 A TO-220, DPAK STripFET DeepGATE™ Power MOSFET Features • Type VDSS RDS on max ID STD78N75F4 75 V < 0.011 Ω 70 A STP78N75F4 75 V < 0.011 Ω 78 A 3 N-channel enhancement mode ■ 100% avalanched rated

Numonyx M25P128

Abstract: M25P128 so16 M25P128 VDFPN8
Contextual Info: M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features „ 128-Mbit flash memory „ 2.7 to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 54 MHz clock rate maximum for 65 nm devices VDFPN8 (ME) 8 x 6 mm (MLP8)

Contextual Info: Alle Hechte Vorbehalten/ HU rights tesim i Alle Hechte Vorbehalten/ Ml rights resemi 4 F i r s t 10 p c s A Se e TB 09 55 166 x 81 x f o l i o 1/ 2 for connector dimensions an d PCB l a y o u t P a c k a g i n g in a c c o r d a n c e w i t h EIA 481-2-A 09551663812.7

UM0856

Abstract: PWM generation STM8s stm8s pwm pwm example sTM8s stm8s STM8S-DISCOVERY rev counter UM0834 pwm schematic UM0817
Contextual Info: UM0856 User manual Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral TIM2 to generate 3 PWM signals. Reference documents • STM8S-DISCOVERY evaluation board user manual (UM0817).

14NM50N

Abstract: STD14NM50N TL 139 H 48-1-A G 0275B0 STF14NM50N Part Marking TO-220 STMicroelectronics STB14NM50N STP14NM50N 14NM50N MOSFET
Contextual Info: STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.246 Ω, 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Preliminary data Features VDSS @ TJmax Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N RDS on max ID 3 1 3 DPAK 550 V

SCS400SDF

Abstract: Small Signal Schottky
Contextual Info: SCS400SDF VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS400SDF is high frequency rectification for switching power supply.

SCS401SDF

Abstract: Small Signal Schottky
Contextual Info: SCS401SDF VOLTAGE 30 V, 0.2 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS401SDF is high frequency rectification for switching power supply.

Contextual Info: Alle Rechte vorbehalten/ M l rights reserved 2 A 3 4 5 6 CM 31,09 max. CO oo in m m 3,85 2,55 oo 16,6 PCB Layout, component side thickness 1.6 mm min. 2,76 Mat i ng f ace a c c o r d i n g t o CECC 75301-802 Unremovabl e screwlocks — to -1- dT—

D12NF

Abstract: D12N STD12NF06 STD12NF06T4 STD12NF06T4-1 STD12NF06T4T4 d12nf06
Contextual Info: STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET II Power MOSFET Features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06T4 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK Applications

Contextual Info: STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages Datasheet - production data Features Order codes 2 STI14NM50N TO-220FP TAB RDS on max ID 550 V 0.32 Ω 12 A STF14NM50N

bq27500

Abstract: bq27500-V130 NTC 10K 3435 table ntc 103at
Contextual Info: bq27500-V130 System-Side Impedance Track Fuel Gauge www.ti.com SLUS914 – OCTOBER 2009 1 INTRODUCTION 1.1 FEATURES 1.2 • • • • • • • • • • • • Battery Fuel Gauge for 1-Series Li-Ion Applications Resides on System Main Board – Works With Embedded or Removable

Contextual Info: Alle Rechte vorbehalten/ M l rights reserved 2 3 4 5 6 31 max. CM A CO 02,1 oo in /r m m - 0.05 l 3,85 X o E oo 2,55 16,6 PCB Layout, component side thickness 1.6 mm min, Unremovable screwlocks 2,76 Mating face a cccording t o CECC 7 5 3 0 1 - 8 0 2 13,75 max.

Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 1 ,0 9 max. - A 3 -t=»- csj co 4 5 6 x o E oo H— l i _1_ H— 1r □ [D □ ro y=L j= y Mat i ng f ace a c c o r d i n g t o CECC 75301-802 2,76 PCB L a y o u t , component s i d e t h i c k n e s s 1. 6 mm mi n.

P14NM50

Abstract: 14NM50N MOSFET 14NM50N 14nm5 STD14NM50N
Contextual Info: STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages Datasheet − production data Features TAB VDSS @ TJmax Type STB14NM50N STD14NM50N

SCS411SDF

Abstract: Small Signal Schottky
Contextual Info: SCS411SDF VOLTAGE 40 V, 0.5 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS411SDF is designed for low power rectification. 3 3 C B Top View

SCS421SDF

Abstract: Small Signal Schottky
Contextual Info: SCS421SDF VOLTAGE 40 V, 0.1 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS421SDF is designed for low power rectification. 3 3 C B Top View

SCS402SDF

Abstract: Small Signal Schottky
Contextual Info: SCS402SDF VOLTAGE 30 V, 0.3 A Small Signal Schottky Barrier Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION A L The SCS402SDF is high frequency rectification for switching power supply.

M25P128 VDFPN8

Abstract: M25P128 MLP8 m25p128 PACKAGE 8x6mm VDFPN8 package M25P128
Contextual Info: M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features • 128-Mbit flash memory ■ 2.7 to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 54 MHz clock rate maximum for 65 nm devices ■ VPP = 9 V for fast program/erase mode

Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 31 max. A Pv H to CM to 3,85 2,89 16,6 Mating face acccording to CECC 75301-802 PCB Layout, component side thickness 1.6 mm min. IQ l £ 7 O. IO 2$ 7,2 All contacts and grounds 4-40 UNC unremovable screwlock

ST10F296

Abstract: EmbAlgo TTCAN st10f296 boot ST10 C_CAN st10 Bootstrap
Contextual Info: ST10F296E Errata sheet 16-bit MCU with 832 Kbyte Flash and 68 Kbyte RAM memories Introduction This errata sheet describes all the functional and electrical problems known in the ABG and ACG silicon version of the ST10F296E. The major revision of the device can be read in the IDCHIP register @F07Ch which is set