26MAR04 Search Results

Contextual Info: 4 T H I S DRAWING C R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . COPYRIGHT 19 2 3 ,19 LOC A LL R IG H T S R ES E R V E D . BY AMP INCORPORATED. D IST CE 16 BAYONET 2 DATE DWN APVD 26MAR04 KG SB DESCRIPTION LTR REVISED 2 . 5mm : revision

Contextual Info: BAS81 / 82 / 83 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 94 9371

BPW24

Abstract: BPW2 8439
Contextual Info: BPW24R VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device

Contextual Info: BPV22NF L VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV22NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BPW20RF

Contextual Info: BPW20RF VISHAY Vishay Semiconductors Silicon PN Photodiode Description BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Contextual Info: BPV21F L VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm).

81519

Abstract: v BPW21R BPW2
Contextual Info: BPW21R VISHAY Vishay Semiconductors Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short

Contextual Info: BPV22F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

SF0070BA03031S

Contextual Info: 70 MHz Low Loss Filter 9 MHz Bandwidth Part Number SF0070BA03031S Micro Networks., 324 Clark Street, Worcester, MA 01606, USA tel: 508-852-5400, fax:508-852-8456, www.micronetworks.com TYPICAL PERFORMANCE Horizontal: 4.0 MHz/div Vertical from top : Magnitude

Contextual Info: BPV23NF L VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

Contextual Info: BPV20F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .

CQY36

Contextual Info: BPW16N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily