26JUL2013 Search Results

ECR-13-000767

Contextual Info: M11 5 NEUES MATERIAL PHOSPHOR UND HALOGEN FREI AUSSEHEN:WEISS 6 MATERIAL ZYTEL E 103 HSL 7 MATERIAL PA 6 UL 94 V2 8 BULK PACKAGING IN PLASTIC BAG & CORRUGATED SHIPPING BOX PN 973058-3 9 10 ECR-13-000767 26JUL2013 MGT GWT 750° (WITHOUT FLAME) ACC.IEC 60335-1 EDITION 06/2001

Contextual Info: F3 ECR-12-005162 19MAR2012 MGT F4 ECR-12-018237 26JUL2013 MGT OBSOLETE WHITE PA 6.6 UL94 V-2 NATURAL 4

Contextual Info: M24C64-A125 Automotive 64-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - production data Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 64 Kbit (8 Kbytes) of EEPROM

Contextual Info: M24C64-A125 Automotive 64-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - production data Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 64 Kbit (8 Kbytes) of EEPROM

Contextual Info: STGB30V60F, STGP30V60F 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series TAB • Tail-less switching off • Low saturation voltage: VCE sat = 1.85 V (typ.)

962932-1

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2011 6 5 4 3 2 2011 RELEASED FOR PUBLICATION LOC Tyco Electronics AMP GmbH - VERSION A A7 B Ausführung mit reduzierter Steckkraft Drahtcrimp CH # 0.05 Schnitt B-B E # 0.3 K # 0.3 (G) # 0.3 H # 0.3 VERSION B VERSION A

Contextual Info: STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE sat = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution

Contextual Info: M24C64-A125 Automotive 64-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - production data Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 64 Kbit (8 Kbytes) of EEPROM

SMG2305P

Abstract: MosFET
Contextual Info: SMG2305P -4.5A , -20V , RDS ON 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to

SSM3055L

Abstract: MosFET
Contextual Info: SSM3055L 2.8A , 60V , RDS ON 100 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-223 The SSM3055L utilized advanced processing techniques to achieve the lowest possible on-resistance,

Contextual Info: STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off TAB • VCE sat = 1.85 V (typ.) @ IC = 30 A • Tight parameters distribution

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION 6 5 4 2 19 LOC ALL RIGHTS RESERVED. 19 SECTION PART NUMBER #284478-1 FOR REF. AS SHOWN SECTION 3 A-A I 6 B-B X =5x N.POS-1 26.9 1 REVISIONS DIST - P LTR 5 REF. REF. 0.3 A DATE DWN APVD