26JAN04 Search Results

Contextual Info: 4 T H IS DRAWING 3 IS U N P U B LIS H E D . RELEASED FOR PUBLICATIO N ALL COPYRIGHT RIGHTS LOC RESERVED. D IS T 00 GP BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DE SC R IPTIO N REVISED PER EC 0 5 1 3 - 0 4 1 6 - 0 3 APVD BM JG 26JAN04 MATERIAL: 1. Housing: PBT , 15 % G.F polyester, Black.

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G 3H — 0 0 2 9 — 0 4 DATE DWN APVD 26JAN04 JR MS D D © & STAMPED □N UNDERSIDE

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G3H— 0 0 2 8 — 04 DATE DWN APVD 26JAN04 JR MS D D +.025 .945 i +.025 1.165 — ±.010

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DWN DATE REV PER 0G3H— 0 0 2 9 — 04 26JAN04 APVD JR MS D D CDLDR CDDED PINK B B ACTIVE L-10007

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G3H— 0 0 2 9 — 04 DATE DWN APVD 26JAN04 JR MS D D +.025 i ±.025 1.105 — — 1.050

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 2 8 — 0 4 DWN 26JAN04 APVD JR MS D D B B ACTIVE 1381-09-90 STANDARD

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR B DESCRIPTION DWN DATE REV PER 0G 3H — 0 0 3 0 — 0 4 26JAN04 APVD JR MS D D B B □ BSEILETE 10503-11-90

D405

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150M

Abstract: HD-22
Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT E RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. REVISIONS GP 0 ELECTRONICS CORPORATION. 00 P LTR c DESCRIPTION REVISED PER EC OS13 - 0 4 1 6 - 0 3 DATE DWN APVD 26JAN04 BM JG MATERIAL: 39.20+0.38 Housing: PBT , 15 % G.F polyester, Black.

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DWN DATE REV PER 0G 3H — 0 0 2 7 — 0 4 26JAN04 APVD JR MS D D B B ACTIVE 10381-09-90 STANDARD

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G3H— 0 0 3 0 — 04 DATE DWN APVD 26JAN04 JR MS D D + .0 2 5 I— 1.025 H +.010 +.010

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 2 8 — 04 DWN 26JAN04 APVD JR MS D D I • I I ■ I .135 DIA. MAX

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G3H— 0 0 2 9 — 04 DATE DWN APVD 26JAN04 JR MS D D ±.005 ,336 -H DIA, ±.015 .500

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Contextual Info: TH I S DRAW ING I S U N P U B L I S H E D . COPYRIGHT 2004 R E L E A S E D FOR P U B L I C A T I O N BY TYCO ELECTRONICS CORPORATION ALL RIGHTS 2 004 LOC RE V I S I ONS D I ST RESERVED. LTR RELEASED REVISED REVISED fE ffi 01 DWN DATE DESCRIPTION FJAÜ-0067-04

Contextual Info: TH I S D R A WI N G IS UNPUBLISHED. C O P YR I G HT 2 0 0 4 RELEASED BY TYCO ELECTRONICS CORPORATION F OR ALL 2004 PUBLICATION R I GHTS LOC R E V I S I ONS D I ST RESERVED. LTR DE S C R I P T I O N m RELEASED ADD - 2 REVISED 01 DWN DATE FJAO-0067-04 APVD

SUB85N03-04P

Abstract: SUP85N03-04P S-40101 S40101
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested

SUB85N03-04P

Abstract: SUP85N03-04P S4010 s40101
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested

1674311-2

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. COPYRIGHT 2004 RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL 2 004 PUBLICATION RIGHTS L OC REV I S IONS D I ST RESERVED. LTR DESCRIPTION fE ffi R E L E A S E D 01 DWN DATE FJAO-0067-04 E C R - 0 5 - ü l 161 ADD - 2 '6JAN04

Contextual Info: Freescale Semiconductor Users Manual MPC5200 Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2005. All rights reserved. MPC5200UG

atmel errata at91rm9200

Abstract: 58a07 6015G AT91RM9200 PA21 AT91RM9200 SDRAM PC638
Contextual Info: Errata • DC Characteristics – Static Current: Static Current Change 43 • AC Characteristics – PLL Frequency Limitation (42) • UHP – No Pulldown on Port 2 Using 208-lead PQFP Package (41) • MultiMedia Card Interface – Data Endianess is Inverted from MCI to MMC or SD Card (40)

SOT23 marking VA

Abstract: mlx90242ese 90242 4 pin SMD hall sensor 90242ESO-BC03 smd code F hall effect analog hall smd 4 pin TC680
Contextual Info: MLX90242 Linear Hall Effect Sensor Features and Benefits • • • • • Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Small Plastic Packages TSOT, 4-SIP-VA, TO-92 RoHS compliant TSOT package

s40101

Abstract: SUB85N03-04P SUP85N03-04P
Contextual Info: SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 85a 0.007 @ VGS = 4.5 V 85a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D TO-263 (D2PAK) 100% Rg Tested