26J1 Search Results

Contextual Info: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)

Contextual Info: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)

Contextual Info: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS

Contextual Info: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)

Contextual Info: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O

Contextual Info: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

TPC8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)

tpc8406

Abstract: TPC8406-H
Contextual Info: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel/N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

Contextual Info: TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type π−MOSVI/U−MOSII TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications l l l l Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.)

Contextual Info: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)

LAL04 taiyo yuden

Abstract: LAL04 LAL04TB MS620J laL03 LHF15BB f0630 LAL05 945M0 20M20
Contextual Info: アキシャルリードインダクタ AXIAL LEADED INDUCTORS OPERATING TEMP K25VJ105C（製品自己発熱を含む） fIncluding self-generated heatg 特長 FEATURES Y自動挿入に対し極めて高い信頼性を有するインダクタ Y自動化高速ラインによる生産の為量産性に優れかつ高品質

Contextual Info: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance

TPC8115

Contextual Info: TPC8115 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV TPC8115 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型, 薄型で実装面積が小さい。 •

TPC8041

Contextual Info: TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS IV TPC8041 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)

tpc8040

Abstract: TPC8040-H
Contextual Info: TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8040-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package •

TPC8050-H

Contextual Info: TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8050-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching

TPC8207

Abstract: A1930
Contextual Info: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPC8110

Contextual Info: TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.)

TPC8107 application circuit

Abstract: TPC8107 TPC8107 "pin compatible"
Contextual Info: TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)

TPC8404

Contextual Info: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)

Contextual Info: TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8048-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching

tpc8026

Abstract: SPF54
Contextual Info: TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS IV TPC8026 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)