2663 TRANSISTOR Search Results

MAX4790EUS

Abstract: specifications of ic 1408 aeac MAX4793
Contextual Info: 19-2663; Rev 1; 8/03 200mA/250mA/300mA Current-Limit Switches Features ♦ Guaranteed Current Limit: 200mA, 250mA, 300mA ♦ Thermal-Shutdown Protection ♦ Reverse Current Protection Applications ♦ ♦ ♦ ♦ 0.2Ω On-Resistance 14ms Guaranteed Blanking Time

MAX4793

Contextual Info: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

MAX4793

Abstract: MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791 MAX4792
Contextual Info: 19-2663; Rev 0; 10/02 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate

MAX47915

Abstract: MAX4793 aeac IC ax 2008 IC ax 2008 circuit diagram MAX4789EUS-T MAX4785 MAX4788 MAX4789 MAX4790
Contextual Info: 19-2663; Rev 3; 10/08 200mA/250mA/300mA Current-Limit Switches The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate

MAX4793

Abstract: AX sot23-5 MAX4790EUS specifications of ic 1408 MAX4785 MAX4788 MAX4789 MAX4789EUS-T MAX4790 MAX4791
Contextual Info: 19-2663; Rev 2; 2/05 200mA/250mA/300mA Current-Limit Switches Features The MAX4789–MAX4794 family of switches feature internal current limiting to prevent damage to host devices due to faulty load conditions. These analog switches have a low 0.2Ω on-resistance and operate

IC AL 6001

Abstract: rjz ce 6002 transistor PTC6003
Contextual Info: 6115950 MICROSEMI 02E CORP/POWER □5 00448 D D e | ^ 1 1 5 ^ 5 0 o p p c m ita 1 f PTC PTC PTC PTC TECH N O LO GY Power Technology Components 6000 6001 6002 6003 FAST-SWITCHING HIGH POWER DARLINGTON TRANSISTORS 15 AMPERES 500 VOLTS Ö -o * 0 384| JÔ50 -{2663! MAX“

SMD T26

Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
Contextual Info: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40

Contextual Info: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Power MOSFET B-pack E-pack STO-220 N-Channel, Enhancement type Absolute Maximum Ratings Tch V dss V gss Id Pt max [ ”C ] [V ] [V ] [A] [w ] [O ] [pF] [pF] [ns] [ns] 2SK1861 150 +20 4 10

Contextual Info: Surface-Mount Devices Power Transistors w E-pack Bipolar transistors A bsolute M axim um Ratings Type No. 2SA 1795 1796 1876 1877 VcBO VcEO V ebo Ic [V] [V] [V] [A] -6 0 -4 0 -5 -7 -8 0 -8 0 60 40 2SC 4668 -1 -5 -1 .5 100 80 4979 Tj sus (min) [W] [°C] P C ]

2SC460

Contextual Info: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E IA J Absolute Maximum Ratings Electrical C haracteristics V cbo VCEO V ebo Ic Ib Pt T stg [V] [V] [V] [A ] [A ] [W] [•c] [•c] Vceo s u s (min) [V] -5 — 7 -1.5 -55 -40 -3 -1 -5 7 -1.5

e-pack

Abstract: 2SK1861 2SK1195 F05B23VR
Contextual Info: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6403 is designed for 1.8 GHz Personal Communications Network PCN base station applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

9d0n90n

Abstract: KHB 9d0n90n khb9d0n90n khb9d0n90na 2663 transistor 9d0n90 54NC khb9d0n90 transistor marking 020
Contextual Info: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

LB1287

Abstract: 2663 transistor booc power transistors LB1288
Contextual Info: 266E Ordering number : EN , Monolithic Digital 1C LB1287.1288 N0.266E Darlington Transistor Array These ICs have circuit configuration of 5-unit Darlington transistor array consisting of NPN transistors and are capable of causing small input current to provide large current drive. They can be advantageously incorporated in equip­

2663 transistor

Abstract: mpsa70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon MPSA70 COLLECTOR 3 1 EMITTER CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ T/\ = 25°C

17611

Abstract: 2sc2652 138D 2SA1020 2SA1133
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

KHB9D0N90N1

Abstract: khb9d0n90n khb9d0n90 2663 transistor
Contextual Info: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB 9d0n90n

Abstract: 9d0n90n KHB9D0N90N KHB9D0N90NA 54nc
Contextual Info: SEMICONDUCTOR KHB9D0N90NA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

khb9d0n90n

Abstract: khb9d0n90
Contextual Info: SEMICONDUCTOR KHB9D0N90N1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A N O B Q K R H I C J F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Designed for broadband commercial and industrial applications at frequen­ cies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Temic U2403B S e m i c o n d u c t o r s Charge Timer Description The U2403B is a monolithic, integrated-bipolar circuit which can be used in applications for time-controlled, constant-current charge. Selection of charge current versus timing is carried out by using the external circuit

RF5189

Abstract: qfn 32 land pattern IPC-SM-782 qfn 3X3 20 pins land pattern 16 pins qfn 3x3 footprint
Contextual Info: RF5189 3V, 2.45GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • 2.5GHz ISM Band Applications • Portable Battery-Powered Equipment • Wireless LAN Systems • Spread-Spectrum and MMDS Systems