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    TT electronics / BI Technologies P260P-S1BS3CA10K

    Res Conductive Plastic POT 10K Ohm 10% 0.5W(1/2W) 1(Elec)/1(Mech)Turn 6.35mm (31.2 X 12.7 X 13.3mm) Pin Panel Mount/Through Hole
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    Master Electronics P260P-S1BS3CA10K
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    • 100 $21.06
    • 1000 $7.53
    • 10000 $7.38
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    ADLINK Technology Inc 4GB DDR4 2133 260P SO-DIMM

    - Bulk (Alt: 4GB DDR4 2133 260P SO-DIMM)
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    Avnet Americas 4GB DDR4 2133 260P SO-DIMM Bulk 13 Weeks 1
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    Phoenix Contact 1933260 (PST 1 3/10-5 0)

    PIN STRIP, PST 1.3/10-5.0. 10 POSITION, COMBICON PST 1.3, BLACK
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    RS 1933260 (PST 1 3/10-5 0) Bulk 25 3 Weeks 1
    • 1 $0.60
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    Pilz International 312260 (PSSU E F AI I)

    ELECTRONIC MODULE ANALOGUE INPUTS AND OUTPUTS, 1 INPUT (0 - 25 MA), PASSIVE.
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    RS 312260 (PSSU E F AI I) Bulk 2 4 Weeks 1
    • 1 $488.12
    • 10 $463.71
    • 100 $463.71
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    nVent ERIFLEX 551260 (PS1000X250X3MM)

    PROTECTION SCREEN, TOP MOUNT, 9.843IN X 39.37IN
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    RS 551260 (PS1000X250X3MM) Bulk 2 1
    • 1 $51.75
    • 10 $43.21
    • 100 $39.85
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    260PS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HEL07

    Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR XEL07
    Contextual Info: Micrel, Inc. SY10EL07 SY100EL07 SY10EL07 2-INPUT XOR/XNOR FEATURES SY100EL07 DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


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    sy10el07sy100el07260pssy10/100el07+8m9999-031006hel07e107sy100el07zcsy100el07zctrsy10el07zcsy10el07zctrxel07 PDF

    Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.


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    sy10el07sy100el07260ps00el07+1t02ir PDF

    Contextual Info: ' - Y ' ij E L 0 7 SYNERGY I NPUT X OR XrJOF-' ! Y I ill.lE t.0 7 VilC O N D U C JO R B S Ü 1 FEATURES • ■ ■ ■ ■ 260ps propagation delay High bandwidth output transitions Internal 75KÎ2 input pull-down resistors ESD protection of 2000V Available in S-pin SOIC package


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    260pssy10/100el07sy10el07zcsy10el07zctr+2sy100el07zcsy100el07zctr PDF

    TC170G35

    Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
    Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


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    tc170g5vtc170g260pstc160g+6tc170g35tab 173 aptc170g45edison time delaycmos gate arrays toshibaxbrl16 PDF

    MICREL marking

    Abstract: XEL07
    Contextual Info: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


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    sy10el07sy100el07260pssy10/100el07+2micrel markingxel07 PDF

    E107

    Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR EL07
    Contextual Info: 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


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    sy10el07sy100el07260pssy10/100el07+6sy10el07zctrsy100el07zcsy100el07zctre107sy10el07zcel07 PDF

    018U

    Abstract: SY58016L SY58017U SY58018U SY58018UMI SY58018UMITR SY58019U SY58025U
    Contextual Info: 5Gbps DIFFERENTIAL LVPECL 2:1 MUX WITH INTERNAL TERMINATION Micrel Precision Edge SY58018U Precision Edge™ SY58018U FEATURES • Guaranteed AC performance over temperature and voltage: • > 5Gbps data throughput • > 4GHz fMAX clock • < 260ps propagation delay


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    sy58018u260ps110ps800mv+816-pin018usy58016lsy58017usy58018umisy58018umitrsy58019usy58025u PDF

    TC170G35

    Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


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    tc170g260pstc160gt0t7247+2is09000tc170g35 PDF

    AZ100EL07

    Abstract: AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07
    Contextual Info: DATA SHEET AZ10EL07 AZ100EL07 ARIZONA MICROTEK, INC. 2-Input XOR/XNOR FEATURES • • • • • 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


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    az10el07az100el07260psmc10el07+5mc100el07az10el/100el07az100el07daz10el07de107 PDF

    Contextual Info: «0» SYNERGY PRELIMINARY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay The SY10EL/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


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    sy10el07sy100el07260pssy10el/100el07+2100elr0g13fll PDF

    E107

    Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR
    Contextual Info: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107


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    sy10el07sy100el07260pssy10/100el07+5sy10el07zctrsy100el07zcsy100el07zctre107sy10el07zc PDF

    Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.


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    sy10el07sy100el07260ps00el07+1t02ir PDF

    LP 3405

    Abstract: AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
    Contextual Info: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


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    az10el07az100el07260psmc10el07+8mc100el07az10el07daz100el07daz10el07taz100el07tazm10el07lp 3405aztel07 PDF

    AZ100EL07

    Abstract: AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
    Contextual Info: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07


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    az10el07az100el07260psmc10el07+7mc100el07az10el07daz100el07daz10el07taz100el07tazm10el07aztel07 PDF

    Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR S E M IC O N D U C T O R FEATURES DESCRIPTION • 260ps propagation delay T he S Y 1 0/1 0 0 E L 0 7 are 2 -in p u t X O R /X N O R gates. T hese devices are fu n ction a lly eq u iva le nt to the E107 d e vice s, w ith h ig h e r p e rfo rm a n ce ca p a b ilitie s .


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    sy10el07sy100el07260pstyp14+2100eltyp280 PDF

    Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES • 260ps propagation delay The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With


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    sy10el07sy100el07260pssy10/100el07+1100el PDF

    AZ10EL07DR2

    Abstract: AZ10EL07T MC100EL07 MC10EL07 AZ100EL07 AZ100EL07D AZ100EL07DR1 AZ100EL07DR2 AZ10EL07 AZ10EL07D
    Contextual Info: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY PACKAGE SOIC 8 SOIC 8 T&R SOIC 8 T&R SOIC 8 SOIC 8 T&R SOIC 8 T&R TSSOP 8 TSSOP 8 T&R TSSOP 8 T&R TSSOP 8 TSSOP 8 T&R TSSOP 8 T&R 260ps Propagation Delay


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    az10el07az100el07260psmc10el07+8mc100el07az10el07daz10el07dr1az10el07dr2az100el07daz100el07dr1az10el07taz100el07dr2 PDF

    2-input-XOR

    Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR
    Contextual Info: « SYNERGY 2-INPUT XOR/XNOR S E M IC O N D U C T O R FEATURES DESCRIPTION • 260ps propagation delay T he S Y 1 0/1 0 0 E L 0 7 are 2 -inp u t X O R /X N O R gates. These devices are fu n ction a lly equivalent to the E107 devices, w ith h ig h e r p e rfo rm a n ce ca p a b ilitie s.


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    sy10el07sy100el07260pssy10/100el07+8100eltd0132-input-xore107sy100el07zcsy100el07zctrsy10el07zcsy10el07zctr PDF

    LM120 model SPICE

    Abstract: crystal Oscillator AGC MOTOROLA ECL DS26C32 SO space qualified synthesizer mil national semiconductor cmos databook LP2953* spice 0.35 micron amps MODEL PARAMETERS SPICE CLC409 CLC520
    Contextual Info: VOLUME NO. 12 1997 Wireless Secure Communications M ilitary tactical and satellite networks and radios are tasked with handling ever greater amounts of data and voice traffic – often over existing channels. As advanced modulation techniques, coding, compression, and encryption techniques are developed,


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    lm120lm136lm137lm140+16lm185lm2940lm2941lm2990lm2991lm3940lm120 model spicecrystal oscillator agcmotorola eclds26c32 sospace qualified synthesizer milnational semiconductor cmos databooklp2953* spice0.35 micron amps model parameters spiceclc409clc520 PDF

    012U

    Abstract: SY58012U SY58012UMG SY58012UMGTR SY58012UMI SY58012UMITR SY58013U MLF16
    Contextual Info: Micrel, Inc. Precision Edge 5GHz, 1:2 LVPECL FANOUT ® SY58012U Precision Edge BUFFER/TRANSLATOR SY58012U WITH INTERNAL INPUT TERMINATION FEATURES Precision 1:2, 800mV LVPECL fanout buffer Guaranteed AC performance over temperature/ voltage: • > 5GHz fMAX clock


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    sy58012u800mv110ps260ps+1010pspp100mvm9999-020207012usy58012umgsy58012umgtrsy58012umisy58012umitrsy58013umlf16 PDF

    Contextual Info: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func­ tions together with high-speed switch­


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    bq2004e150-milol-18dg01f+116-pin PDF

    018U

    Abstract: SY58017U SY58018U SY58018UMG SY58018UMGTR SY58018UMI SY58018UMITR SY58019U
    Contextual Info: ULTRA-PRECISION DIFFERENTIAL LVPECL 2:1 MUX with INTERNAL TERMINATION Micrel, Inc. Precision Edge SY58018U ® Precision Edge SY58018U FEATURES • Guaranteed AC performance over temperature and voltage: • DC to 5Gbps data throughput • DC to > 4GHz fMAX clock


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    sy58018u260ps110ps10pspp+10800mv16-pinm9999-020207018usy58017usy58018umgsy58018umgtrsy58018umisy58018umitrsy58019u PDF

    vmd 185 020 at

    Abstract: MAX3286CTI T
    Contextual Info: 19-1550; Rev 6; 11/04 3.0V to 5.5V, 1.25Gbps/2.5Gbps LAN Laser Drivers PIN-PACKAGE MAX3286CTI+ 0°C to +70°C 28 Thin QFN 5mm x 5mm * MAX3286CGI 0°C to +70°C 28 QFN (5mm x 5mm)* MAX3286CHJ 0°C to +70°C 32 TQFP (5mm x 5mm) Ordering Information continued at end of data sheet.


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    25gbps/2max3286/max3296780nm850nm+61300nmh32-2f21-0110bmax3286cvmd 185 020 atmax3286cti t PDF

    EN-60825-2

    Abstract: SPBD-1250E4Q1RT EIA-JESD22-A114 GR-468 RIN12OMA 1600nm Transceiver
    Contextual Info: SPBD-1250E4Q1RT Intelligent SFP Bi-Directional Transceiver Module for Gigabit Ethernet and Fast Ethernet FEATURES RoHS compliant Digital Diagnostic SFF-8472, Rev. 9.5 MSA compliant Support Multi-Rate for Gigabit Ethernet and Fast Ethernet Simplex LC connector with 1310nm


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    spbd-1250e4q1rtsff-84721310nm1480nm+101600nmgr-468spbd-1250xxxx1250mbit/secr5003247121cfren-60825-2eia-jesd22-a114rin12oma1600nm transceiver PDF