260PS Search Results
260PS Price and Stock
TT electronics / BI Technologies P260P-S1BS3CA10KRes Conductive Plastic POT 10K Ohm 10% 0.5W(1/2W) 1(Elec)/1(Mech)Turn 6.35mm (31.2 X 12.7 X 13.3mm) Pin Panel Mount/Through Hole |
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P260P-S1BS3CA10K |
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ADLINK Technology Inc 4GB DDR4 2133 260P SO-DIMM- Bulk (Alt: 4GB DDR4 2133 260P SO-DIMM) |
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4GB DDR4 2133 260P SO-DIMM | Bulk | 13 Weeks | 1 |
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Phoenix Contact 1933260 (PST 1 3/10-5 0)PIN STRIP, PST 1.3/10-5.0. 10 POSITION, COMBICON PST 1.3, BLACK |
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1933260 (PST 1 3/10-5 0) | Bulk | 25 | 3 Weeks | 1 |
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Pilz International 312260 (PSSU E F AI I)ELECTRONIC MODULE ANALOGUE INPUTS AND OUTPUTS, 1 INPUT (0 - 25 MA), PASSIVE. |
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312260 (PSSU E F AI I) | Bulk | 2 | 4 Weeks | 1 |
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nVent ERIFLEX 551260 (PS1000X250X3MM)PROTECTION SCREEN, TOP MOUNT, 9.843IN X 39.37IN |
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551260 (PS1000X250X3MM) | Bulk | 2 | 1 |
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260PS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HEL07
Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR XEL07
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sy10el07sy100el07260pssy10/100el07+8 | |
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Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates. |
OCR Scan |
sy10el07sy100el07260ps00el07+1 | |
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Contextual Info: ' - Y ' ij E L 0 7 SYNERGY I NPUT X OR XrJOF-' ! Y I ill.lE t.0 7 VilC O N D U C JO R B S Ü 1 FEATURES • ■ ■ ■ ■ 260ps propagation delay High bandwidth output transitions Internal 75KÎ2 input pull-down resistors ESD protection of 2000V Available in S-pin SOIC package |
OCR Scan |
260pssy10/100el07sy10el07zcsy10el07zctr+2 | |
TC170G35
Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
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OCR Scan |
tc170g5vtc170g260pstc160g+6 | |
MICREL marking
Abstract: XEL07
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sy10el07sy100el07260pssy10/100el07+2 | |
E107
Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR EL07
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sy10el07sy100el07260pssy10/100el07+6 | |
018U
Abstract: SY58016L SY58017U SY58018U SY58018UMI SY58018UMITR SY58019U SY58025U
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sy58018u260ps110ps800mv+8 | |
TC170G35Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate |
OCR Scan |
tc170g260pstc160gt0t7247+2 | |
AZ100EL07
Abstract: AZ100EL07D AZ10EL07 AZ10EL07D E107 MC100EL07 MC10EL07
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az10el07az100el07260psmc10el07+5 | |
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Contextual Info: «0» SYNERGY PRELIMINARY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay The SY10EL/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With |
OCR Scan |
sy10el07sy100el07260pssy10el/100el07+2 | |
E107
Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR
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sy10el07sy100el07260pssy10/100el07+5 | |
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Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates. |
OCR Scan |
sy10el07sy100el07260ps00el07+1 | |
LP 3405
Abstract: AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
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az10el07az100el07260psmc10el07+8 | |
AZ100EL07
Abstract: AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
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az10el07az100el07260psmc10el07+7 | |
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Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR S E M IC O N D U C T O R FEATURES DESCRIPTION • 260ps propagation delay T he S Y 1 0/1 0 0 E L 0 7 are 2 -in p u t X O R /X N O R gates. T hese devices are fu n ction a lly eq u iva le nt to the E107 d e vice s, w ith h ig h e r p e rfo rm a n ce ca p a b ilitie s . |
OCR Scan |
sy10el07sy100el07260pstyp14+2 | |
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Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES • 260ps propagation delay The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With |
OCR Scan |
sy10el07sy100el07260pssy10/100el07+1 | |
AZ10EL07DR2
Abstract: AZ10EL07T MC100EL07 MC10EL07 AZ100EL07 AZ100EL07D AZ100EL07DR1 AZ100EL07DR2 AZ10EL07 AZ10EL07D
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az10el07az100el07260psmc10el07+8 | |
2-input-XOR
Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR
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OCR Scan |
sy10el07sy100el07260pssy10/100el07+8 | |
LM120 model SPICE
Abstract: crystal Oscillator AGC MOTOROLA ECL DS26C32 SO space qualified synthesizer mil national semiconductor cmos databook LP2953* spice 0.35 micron amps MODEL PARAMETERS SPICE CLC409 CLC520
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lm120lm136lm137lm140+16 | |
012U
Abstract: SY58012U SY58012UMG SY58012UMGTR SY58012UMI SY58012UMITR SY58013U MLF16
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sy58012u800mv110ps260ps+10 | |
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Contextual Info: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func tions together with high-speed switch |
OCR Scan |
bq2004e150-milol-18dg01f+1 | |
018U
Abstract: SY58017U SY58018U SY58018UMG SY58018UMGTR SY58018UMI SY58018UMITR SY58019U
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sy58018u260ps110ps10pspp+10 | |
vmd 185 020 at
Abstract: MAX3286CTI T
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25gbps/2max3286/max3296780nm850nm+6 | |
EN-60825-2
Abstract: SPBD-1250E4Q1RT EIA-JESD22-A114 GR-468 RIN12OMA 1600nm Transceiver
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spbd-1250e4q1rtsff-84721310nm1480nm+10 | |