FGB40N6S2
Abstract: 40N6S2 FGH40N6S2 FGH50N6S2D FGP40N6S2 T125 TA49438
Contextual Info: FGH40N6S2, FGP40N6S2, FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2, and FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with
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30A, 600v DIODE
Abstract: fairchild Igbts guide 40n6s2
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay
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ISL9H2060EG3
Abstract: LD26 igbt 400V 20A
Contextual Info: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS
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40N6S2
Abstract: FGB40N6S2 FGH40N6S2 FGH40N6S2D FGP40N6S2 LD26 TA49438
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay
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40N6S2
Abstract: FGH40N6S2 FGH40N6S2D FGP40N6S2 TA49438 FGB40N6S2 FGB40N6S2T
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay
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40N6S2D
Abstract: FGH40N6S2D LD26
Contextual Info: FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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40n6s2d
Abstract: FGH40N6S2D LD26 TA49391
Contextual Info: FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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40n6s2d
Abstract: FGH40N6S2D LD26 T125 TA49438
Contextual Info: FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge,
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40n6s2d
Abstract: TA49438 FGH40N6S2D LD26
Contextual Info: FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge,
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TA49438
Abstract: ISL9G2060EG3 ISL9G2060EP3 ISL9G2060ES3 TO247
Contextual Info: ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT Features Tfairchildhe ISL9G2060EG3, ISL9G2060EP3, and ISLPG2060ES3 are a Low Gate Charge LGC SMPS II IGBT combine the fast switching speed of the SMPS IGBTs
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ISL9G2060EG3
Abstract: ISL9G2060EP3 ISL9G2060ES3 TA49438
Contextual Info: ISL9G2060EG3, ISL9G2060EP3, ISL9G2060ES3 Data Sheet [ /Title ISL9 G2060 EG3, ISL9G 2060E P3, ISL9G 2060E S3 /Subjec t (600V, SMPS II LGC Series NChann el IGBT) /Autho r () /Keyw ords (Intersi l Corpor ation, Semico nducto r 600V, SMPS II LGC Series NChann
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FGH40N6S2
Abstract: FGH40N6S2D FGP40N6S2 LD26 TA49438 40N6S2 FGB40N6S2
Contextual Info: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay
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2SK2677
Abstract: FP10W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2677 N-Channel Enhancement type OUTLINE DIMENSIONS FP10W90HVX2 Case : ITO-3P (Unit : mm) 900V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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ISL9H2060EG3
Abstract: LD26
Contextual Info: ISL9H2060EG3 Data Sheet January 2002 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and avalanche
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2SK2676
Abstract: F10W90HVX2 26mJ 2SK2676 equivalent
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2676 F10W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2676
Abstract: F10W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2676 F10W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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40n6s2d
Contextual Info: FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode General Description Features The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge,
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2sk2677
Abstract: FP10W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2677 N-Channel Enhancement type OUTLINE DIMENSIONS FP10W90HVX2 Case : ITO-3P (Unit : mm) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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3N0404
Abstract: infineon smd package
Contextual Info: Preliminary Data Sheet IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.9 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1
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