260000 MHZ Search Results

specification of rs 485 cable modbus

Abstract: microprocessor block diagram of plc plc ladder diagram of clock BL2500 ladder diagram plc 8 input 6 output plc controller plc programming languages plc structured text rabbit processor IEC61131-3
Contextual Info: Embedded PLC Application Kit Key Features • An ISaGRAF 32 I/O V3.50 Workbench • A fully featured BL2500 • Embedded PLC Kernel for BL2500 • Prototyping wires, connectors and terminals • Programming cable and documentation ISaGRAF 32 Workbench ISaGRAF V3.50 supports the

B10T

Abstract: 1008ls of coilcraft 0603CS 0402CS 80500 1812LS-224
Contextual Info: Document 158-1 Modeling Coilcraft RF Inductors This data allows you to create a model that adequately simulates the behavior of Coilcraft RF inductors from 1 MHz to 1.8 GHz. PSpice Equivalent of Circuit An equivalent PSpice® model of a practical inductor is

0805CS-060

Abstract: 330E03
Contextual Info: Document 158-1 Modeling Coilcraft RF Inductors This data allows you to create a model that adequately simulates the behavior of Coilcraft RF inductors from 1 MHz to 1.8 GHz. PSpice Equivalent of Circuit An equivalent PSpice® model of a practical inductor is

630E03

Contextual Info: Document 158-1 Modeling Coilcraft RF Inductors This data allows you to create a model that adequately simulates the behavior of Coilcraft RF inductors from 1 MHz to 1.8 GHz. PSpice Equivalent of Circuit An equivalent PSpice® model of a practical inductor is

Contextual Info: SEPTEMBER 1993 DS3820 - 2.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. The unique architecture allows

MUX2T01

Abstract: MUX4T01
Contextual Info: •JUL J Ü 9 S3- GEC PLES S EY J U N E 1993 S E M I C O N D U C T O R S DS3820 - 1.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density

DS3820

Contextual Info: S i GEC PLESS EY SEPTEMBER 1993 S E M I C O N D U C T O R S DS3820 - 2.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS IN T R O D U C T IO N ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density

BMA16X16

Contextual Info: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with

hp 4552

Abstract: O2-A2 CQFP100 PSOP24-MP0816 CLT84 gh 312 clt82xxx CQFP44 diode gp 421 PS-3306 Series
Contextual Info: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

CQFP44

Abstract: hp 4552 CLA80000 Series MQFP52 clt82xxx O2-A2 CQFP100 gh 312 PS-3306 Series cqfp120
Contextual Info: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

Power Supply PS-613 uk

Abstract: CQFP44 GP141 DS3820 mux2*1 hp 4552 PSOP28-MP0818 cla85xxx PS-3306 Series Mitel Semiconductor process flow
Contextual Info: CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Mitel Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

quicklogic pasic

Contextual Info: WS * 3 1391 pASIC 1 FAMILY V iaLink™ Technology V ery H igh Speed CMOS FPGAs PRELIMINARY DATA FAMILY HIGHLIGHTS B May 1991 Very High Speed - ViaLink™ Metal-to-metal programmable-via antifuse technology, ensures counter speeds over 100 MHz, and logic

EN29LV640T

Abstract: 29LV A0-A21 EN29LV640 SA124-SA126 EN29LV640B
Contextual Info: EN29LV640T/B EN29LV640T/B 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Standard DATA# polling and toggle bits

Contextual Info: Features • 1.65V - 1.95V Read/Write • High Performance • • • • • • • • • • • – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Burst Frequency – 66 MHz – Configurable Burst Operation Sector Erase Architecture

2452D

Abstract: AT49BV3218 AT49BV3218T
Contextual Info: Features • 2.65V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

EN29LV640AT

Contextual Info: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single p wer supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

AT49LV3218

Abstract: nc 555 AT49BV3218 AT49BV3218T AT49LV3218T
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout

AT49BV3218

Abstract: AT49BV3218T AT49LV3218 AT49LV3218T
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout

cFeon

Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Contextual Info: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

3214T

Contextual Info: Features • 2.65V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

EN29LV640AB

Abstract: EN29LV640AT marking SG32 66-SA 56-SA 60-SA 76-SA 88-SA en29lv640A 68-SA
Contextual Info: EN29LV640A EN29LV640A 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • JEDEC Standard compatible • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations

Contextual Info: EN29LV640T/B EN29LV640T/B 64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns

28F008SA

Abstract: C1995 MCM28F064ACH 4F0000 6A0000 4D0000 76FFFF
Contextual Info: July 1995 MCM28F064ACH 64-Mbit 8-Mbit x 8 Flash Memory Module with Internal Decoding and Quiet Series I O Buffers General Description Features The MCM28F064ACH is a 67 108 864-bit flash memory module organized as 8 pages with 1 048 576 bytes per page Utilizing Intel’s FlashFileTM