2600 SIGNETICS Search Results

harris 201

Abstract: H12-200-2 rc4558 H1200 HA-2650 Signetics 2605 HI-5051 dg506 HI5043 DG507
Contextual Info: PART NUMBER M ANUFACTURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM /R C1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM /RC4132 HA-2700/2705 RM/RC4531 H A-2500/2505 RM /RC4558 HA-2650/2655 111/211/311 H A -2 1 11/2211/2311

H12-200

Abstract: h1-5051 HI-5046 RC4531
Contextual Info: PA R T N U M BER M AN UFAC TURER Raytheon Signetics Silicon General Siliconix H A R R IS E Q U IV A L E N T RM/RC1556A HA-2600/2605 RM/RC4131 HA-2600/2605 RM/RC4132 HA-2700/2705 RM/RC4531 HA-2500/2505 RM/RC4558 HA-2650/2655 111/211/311 HA-2111/2211/2311 1488

Signetics 2518

Abstract: 415v scr CIRCUIT DIAGRAM Signetics 2519 Shift Registers 26 SIGNETICS 40bit DIP
Contextual Info: s iijn o tic s H E X 32 - B l T A n d 4 ü -ö IT STATIC SHIFT REGISTERS SILICON GATE MOS 2500 SERIES DESCRIPTION 2518 2519 P IN C O N F IG U R A T IO N Top View Thasa Signetics 2600 Series hex 3 2-bit and hex 40-bit recirculating static s h ift registers consist o f enhancement

Binary to hexadecimal

Abstract: Signetics 2608 rom 1024 1024x8 TEN 8 Series 2608 rom 1024x8 1024X8
Contextual Info: sjgnotics 1024X8 STATIC READ ONLY MEMORY 12608 2608 1 N CHANNEL SILICON GATE MOS 2600 SERIES PIN C O N F IG U R A T IO N D ESCRIPTIO N The 2608 is a fu lly decoded, static, mask programmable read-only memory. It has a capacity of 8192 bits organized 1024 X 8. The 2608 is fabricated with low threshold

lm 4046 IC

Abstract: tic 2630 TIC 2060 TIC 2060 D lr 2905 z a2700 D1488 pinout of CA3130 1488h 75109
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:

rc4558 opamp schematic

Abstract: CD4046 AD7512 MC1554 MPCBD XR215 HA-2500 HA-2502 AD509 HA-2512
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, HA-2500, HA-2502, HA-2510, HA-2512, HA-2520, HA-2522, HA-2600, HA-2602, HA-2620, HA-2622, HA-2050, HA-2050A, HA-2060, HA-2060A TO-99 H < a "1 3 j— N OTES: T a = +125°C R- = 1 M e g o h m C-] = 0.01 jUF, 1 0 0 V HA-2000 NOTES:

ci 1458 texas

Abstract: ca3130 replacement 1488 1489 standard philbrick amp op 2060 pe 2520 linear encoder ca3130 equivalent TELEDYNE PHILBRICK 5558 op amp MA776
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A TO-99 H < a j— N O TES: T a = + 1 2 5 °C R- = 1 M egohm C-] = 0.01 jU F, 1 0 0 V HA-2000

2602B

Abstract: A 2602 16 pin
Contextual Info: q s n n n t s n q a iy iiL iib a f u l l y decoded random a c c e s s o c n o 10 2 4 -b it s t a t i c m em ory Z b U Z SILICON GATE MOS 2600 SERIES DESCRIPTION PIN CO N FIG U RA TIO N The Signetics 2602 is a medium speed, static random access memory offering a 1024x1 organization. Fabricated with

MC1554

Abstract: hi pot test sheets lm 1456 n H12-200 mA702 Signetics 2650 5558 op amp HA-2502 HA-2510 HA-2520
Contextual Info: BURN-IN CIRCUITS HA-909 HA-909, H A-2500, HA-2502, HA-2510, HA-2512, H A-2520, HA-2522, HA-2600, HA-2602, HA-2620, H A-2622, HA -2050, HA-2050A , HA-2060, HA-2060A H <a "1 TO-99 3 j— N OTES: T a = + 1 2 5 °C R- = 1 M egoh m C-] = 0 .0 1 jU F, 1 0 0 V HA-2000

HA2-2055-5

Abstract: rc4558 preamp H12-200 RC1556 MA727 MC1554 ram 2111 signetics 3507J h1200 38 Li-49
Contextual Info: BURN-IN CIRCUITS H A-909 H A-909, H A-2500, H A-2502, H A-2510, HA-2512, H A-2520, H A-2522, H A-2600, H A-2602, HA-2620, H A-2622, H A-2050, H A -2050A , H A-2060, HA-2060A TO-99 H < a "1 3 j— N O TES: T a = + 1 2 5 °C R- = 1 M ego hm C-] = 0 .0 1 jU F , 1 0 0 V

EA4900

Abstract: EA4600 til 071 Signetics TTL 2600 signetics
Contextual Info: S ig n e tic s M e m o rie s-M O S R O M 260016384-Bit Static MOS ROM 2048 x 8 C O N N E C TIO N D IA G R A M GNO Q T G E N E R A L DE SC R IPTIO N The 2600 o utputs appear and remain in a steady state c o n d itio n u n til a new address is read. The 16,384 bits are

CA3084

Abstract: LM 358 opamp PMI OP AMP MAX9698 CTS0032 lm 3906 1339 teledyne Teledyne 1339 CTS0033 motorola s200
Contextual Info: ELANTEC INC MIE D 312^557 ODDIIbb ö « E L A Analog that’s ahead o f the times. P R O D U C T L IN E M A R C H 1991 A m p lif ie r s V id e o S p e c i f ic P r o d u c t s EHA2400/EHA2400A 4 Channel Programmable Amp EL2082/EL2082C 200 MHz Variable Gain Amp

ck2605

Abstract: ck2678 PLHS16L8AN P16L8 PLS100 fpla plhs18p8an P16V8 82S155 F16L8 PLS154
Contextual Info: Philips Components-Signetics Third-party software support Programmable Logic Devices Data I/O Corporation 10525 Willows Road N E. P.O. Box 97046 Redmond, WA 98073-9746 Telephone: 206 881-6444 PART NUMBER 10020EV8 10H20EV8 10H20EV8 CK2605 CK2678 PHD16N8 PHD16N8

Contextual Info: * 4-STAGE COUNTER/ SHIFT REGISTER SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1lOOps ■ lEEmln. of -170mA ■ ESD protection of 2000V ■ Internal 75KO input pull-down resistors ■ Industry standard 100K ECL levels

Contextual Info: £* 4-STAGE COUNTER/ SHIFTREGISTER SYNERGY SEMICONDUCTOR SY100S336 SY101S336 PRELIMINARY DESCRIPTION FEATURES The SY100/101S336 functions either as a modulo-16 up/down counter or as 4-bit bidirectional shift register and is designed for use in high performance E C L systems. Three Select inputs Sn

Q002

Abstract: F100K SY100S336
Contextual Info: * 4-STAGE COUNTER/ SHIFT REGISTER SYNERGY SY100S336 S E M IC O N D U C T O R DESCRIPTION FEATURES • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ I ee min. o f-1 7 0 m A ■ ESD protection of 2000V ■ Internal 75K Q input pull-down resistors

F100K

Abstract: SY100S336
Contextual Info: * 4-STAGE COUNTER/ SHIFT REGISTER SYNERGY S EM IC O N D U C TO R FEATURES D E S C R IP T IO N I l I I I I I Max. shift frequency of 700MHz Clock to Q delay max. of 1lOOps lE E m ln . of -170mA ESD protection of 2000V Internal 75KÎ2 input pull-down resistors

Contextual Info: * Î S TAG E C O U N T E R SY N E R G Y S H IF T R E G IS T E R 3* 1003336 S E M IC O N D U C T O R FEATURES DESCRIPTION • Max. shift frequency of 700MHz ■ Clock to Q delay max. of 1100ps ■ Iee min. o f-170m A ■ Internal 75KQ input pull-down resistors

Philips SPA 1100

Abstract: contactless Functional Specification
Contextual Info: INTEGRATED CIRCUITS UBB1000 Contactless chip-card interface Preliminary specification File under Integrated circuits, IC18 July 1991 Philips Semiconductors PHILIPS PHILIPS Preliminary specification Philips Semiconductors Contactless chip-card interface UBB1000

Contextual Info: * 4-STAGE CO U N TER / SHIFT REGISTER SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION The SY100S336 functions either as a m odulo-16 up/ down counter or as a 4-bit bidirectional shift register and is designed for use in high-perform ance ECL system s. Three Select inputs Sn are provided fo r determ ining the mode of

Contextual Info: * 4-STAGE COUNTER/ SHIFT REGISTER SYNERGY SY100S336 SEMICONDUCTOR FEATURES DESCRIPTION Max. shift frequency of 700MHz Clock to Q delay max. of 1100ps I e e min. of -170mA T h e S Y 1 0 0 S 3 3 6 fu n c tio n s e ith e r as a m o d u lo -1 6 u p/ dow n c o u n te r o r as a 4 -b it b id ire c tio n a l s h ift re g is te r and is

IP4T

Abstract: diagram pulsa 41bv relai 2511A
Contextual Info: S ilM D tlC S •J TRI-STATE OUTPUT dual 5 u :j BIT STATIC SHIFT REuiiltnS OcnQ Z0US S ILIC O N G ATE M OS 2500 SERIES 2510 2511 -D E S C R IP T IO N These Signetics 2500 Series Dual 60, 100, and 2 00 b it recir­ culating static sh ift registers consist o f enhancement mode

AM9216

Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Contextual Info: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E