25X25X0 Search Results

vc 125a

Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 _ -FEATURES 500mW POWER DISSIPATION * * * * lc C O N T I.5 A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed)

FT-210

Abstract: ZUMT618 ZUMT718 DSA003732
Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.25A 3A Peak Pulse Current Excellent HFE Characteristics Up to 3A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat)

FCX619

Abstract: FCX720 PARTMARKING 619 FCX619 equivalent
Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

Contextual Info: QSX2 Datasheet NPN 5.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 5.0A TSMT6 6 (5) (4) (1) (2) (3) QSX2 (SC-95) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QST3 3) Low VCE(sat) VCE(sat)= 0.25V(Max.) (IC/IB= 2A / 40mA)

Contextual Info: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709

ZUMT617

Abstract: ZUMT717 DSA003732
Contextual Info: Super323  SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT717 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * * IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

Contextual Info:
Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

t718

Abstract: t618
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )

1N5817 523

Abstract: 896KB
Contextual Info: 19-1459; Rev 2; 3/02 KIT ATION EVALU E L B AVAILA ±5V, 1Gsps, 8-Bit ADC with On-Chip 2.2GHz Track/Hold Amplifier The MAX104 PECL-compatible, 1Gsps, 8-bit analog-todigital converter ADC allows accurate digitizing of analog signals with bandwidths to 2.2GHz. Fabricated

Contextual Info: 2SD2673 Datasheet NPN 3.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 3A TSMT3 Collector Base Emitter 2SD2673 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1708 3) Low VCE(sat) VCE(sat)=0.25V(Max.)

IC 1A datasheet

Abstract: ZUMT618 ZUMT718 DSA003732
Contextual Info:
Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

Contextual Info: QSX2 Datasheet NPN 5.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 5.0A TSMT6 6 (5) (4) (1) (2) (3) QSX2 (SC-95) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QST3 3) Low VCE(sat) VCE(sat)= 0.25V(Max.) (IC/IB= 2A / 40mA)

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

ZUMT720

Abstract: ZUMT619 DSA003732
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

npn switching transistor Ic 100mA

Abstract: ZUMT619 ZUMT720
Contextual Info: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)

ZUMT618

Abstract: ZUMT718
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZUMT718 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat)

Contextual Info: 2SD2703 / 2SD2675 Datasheet NPN 1.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 30V 1.0A Base Base Emitter Emitter 2SD2675 SC-96 2SD2703 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1733, 2SB1710

Contextual Info: QST3 Datasheet PNP -5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5A TSMT6 6 (5) (4) (1) (2) (3) QST3 (SC-95) lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low VCE(sat) VCE(sat)= -0.25V(Max.)

Contextual Info: 2SD2703 / 2SD2675 Datasheet NPN 1.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 30V 1.0A Base Base Emitter Emitter 2SD2675 SC-96 2SD2703 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1733, 2SB1710

ZUMT617

Abstract: ZUMT717 DSA003732
Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * * * * IC CONT 1.5A 5A Peak Pulse Current Excellent HFE Characteristics Up To 5A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat)

Contextual Info: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2 W POWER D ISSIPA TION * * * * * 6A PEAK PULSE CURRENT EXCELLENT h FE CHARACTERISTICS UP TO 6 Am ps EXTREM ELY LOW SATURATION VOLTAGE e.g. 13m V typ. EXTREM ELY LOW EQUIVALENT ON-RESISTANCE;