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    25UL Search Results

    25UL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10131931-225ULF
    		Amphenol Communications Solutions Minitek®, Board to Board, Receptacle, Surface Mount, Single row, 25 Positions, 2mm (0.079inch), horizontal. PDF
    10072353-S01-25ULF
    		Amphenol Communications Solutions Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Through Hole - Double row - 50 Positions - 2mm (0.079inch) - Right Angle PDF
    10072353-F01-25ULF
    		Amphenol Communications Solutions Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Through Hole - Double row - 50 Positions - 2mm (0.079inch) - Right Angle PDF
    10131930-925ULF
    		Amphenol Communications Solutions Minitek®, Board to Board, Receptacle, Through Mount, Single row, 25 Positions, 2mm (0.079inch), horizontal. PDF
    57102-S04-25ULF
    		Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, Unshrouded Vertical Header, Through Hole, Double Row, 50 Positions, 2.00mm (0.078in) Pitch.. PDF
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    25UL Price and Stock

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    Altech Corporation CTL2.5U(L)/110

    Conn Terminal Block 6 POS Screw DIN Rail 25A
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    Master Electronics CTL2.5U(L)/110
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    Powell Electronics CTL2.5U(L)/110 198 50
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    Altech Corporation KEA3125UL

    Altech KEA3125UL nnect Switch Aluminum Enclosed Motor 125 A/600 V Black Handle KEA Series
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    Master Electronics KEA3125UL
    • 1 $698.70
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    Newark KEA3125UL Bulk 1
    • 1 $697.04
    • 10 $683.10
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    Powell Electronics KEA3125UL 3 1
    • 1 $838.45
    • 10 $838.45
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    Amphenol FCi 10131935-925ULF

    PCB Receptacle - Board to Board - Female Socket - 25 Position - 1 Row - 0.079 (2.00mm) Pitch - Solder Termination - Surface Mount.
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    Master Electronics 10131935-925ULF
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    Powell Electronics 10131935-925ULF 407 90
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    Altech Corporation CTL2.5U(L)/24

    Conn Terminal Block 6 POS Screw DIN Rail 25A
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    Master Electronics CTL2.5U(L)/24
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    • 100 $7.28
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    Newark CTL2.5U(L)/24 Bulk 50
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    • 1000 $7.09
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    RS CTL2.5U(L)/24 Bulk 20 11 Weeks 1
    • 1 $9.39
    • 10 $9.39
    • 100 $9.39
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    Powell Electronics CTL2.5U(L)/24 135 50
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    Neutron USA CTL2.5U(L)/24
    • 1 $39.99
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    Altech Corporation KER425UL-Y/R

    ENCL.DISC.SWITCH STAINLES
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    Master Electronics KER425UL-Y/R
    • 1 $555.62
    • 10 $532.29
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    Find more 25UL price and stock on Findchips.com

    25UL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TIM6472-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim6472-25ul PDF

    TIM6472-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		tim6472-25ul PDF

    Contextual Info: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim3742-25ul95ghz PDF

    TIM7785-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim7785-25ul PDF

    TIM5964-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim5964-25ul15ghz PDF

    TIM6472-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim6472-25ul PDF

    TIM3742-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim3742-25ul95ghz PDF

    Contextual Info: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		tim7785-25ul PDF

    TIM6472-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM6472-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz „ HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim6472-25ul PDF

    TIM7785-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim7785-25ul PDF

    TIM5964-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim5964-25ul15ghz PDF

    TIM7179-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim7179-25ul PDF

    Contextual Info: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		tim5964-25ul-47ds15ghz PDF

    25ul

    Contextual Info: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim3742-25ul95ghz25ul PDF

    TIM4450-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim4450-25ul PDF

    TIM4450-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim4450-25ul PDF

    TIM7785-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7785-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=8.5dB at 7.7GHz to 8.5GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim7785-25ul PDF

    TIM5964-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM5964-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim5964-25ul15ghz PDF

    TIM7179-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		tim7179-25ul PDF

    Contextual Info: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim4450-25ul PDF

    TIM3742-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz „ HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim3742-25ul95ghz PDF

    TIM7179-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM7179-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz „ HIGH GAIN G1dB=8.5dB at 7.1GHz to 7.9GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		tim7179-25ul PDF

    TIM4450-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		tim4450-25ul PDF

    TIM3742-25UL

    Contextual Info: MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		tim3742-25ul95ghz PDF