25SN Search Results

Contextual Info: DR12-25SN

25SN

Contextual Info: Datasheet for part number DBMN-25SN-K126 Our Catalog Part Number: DBMN-25S-N-K126 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*M Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement Dielectric Withstanding Voltage

Contextual Info: Datasheet for part number DBMZ-25SN-K126 Our Catalog Part Number: DBMZ-25S-N-K126 Our Global Manufacturing Part Number: 053513-2279 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*M Product Datasheet General Wire Gauge Range AWG Mating Cycles

Contextual Info: DR15-25SN-R

Brimar 13D3

Abstract: 6sn7gt 6sn7gt* brimar Double Triode 6SN7 brimar 6Sn7-GT Scans-0017293
Contextual Info: 13hl I3D2 In d u strial T ype IID! TYPE I3D I Previously Coded 25SN7GT (O CTAL BASE) DO UBLE TR IO D E (SEPARATE C A T H O D ES) H g MAX' CHARACTERISTICS B R I M A R ty p e I 3 D I h as been sp e cia lly d e sig n e d fo r u se in a ircra ft and In d u st r ia l e q u ip m e n t w h e r e

Contextual Info: DR15-25SN

ESM 498

Contextual Info: TDK Power Transformers, Power Inductors PQ26/25 CORE TYPE 90W, 50kHz SHAPES AND DIMENSIONS PIN CONFIGURATION D (Pin terminals) E (Primary: pin terminals, secondary: lead wires) 9.0 (.354) 6-01.2 [.047] 7-01.2 (.047) f 4 -V s ¿- -9 - <► — 1- —

TC558128AJ-20

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC558128AJ-15/20 PRELIMINARY SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS STATIC RAM Description The TC558128AJ is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

Contextual Info: MITSUBISHI LSIs M 5 M 5 2 5 8 E J - 1 0 ,- 1 2 p f t E lA .„p iw » ft * . wrtvrts £0*0 P»iB 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5258E is a family of 65536-word by 4-bit static RAMs, fabricated with the high-performance C M O S silicon-gate MOS

Contextual Info: _ CYM1620 SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1620 is a very high performance 1-megabit static RAM module organized as 64K words by 16 bits. The module is

Contextual Info: CXK5164P/J 25/30/35 SONY* 65,536-word X 1-bit High Speed CMOS Static RAM Description C X K 5 1 6 4 P /J are 6 5 ,5 3 6 bits high speed CMOS sta tic RAMs organized as 65,536 w ords by 1 b it and operate fro m a single 5V supply. These devices have separate Data in p u t and

TC551664J-15

Abstract: cs40
Contextual Info: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The T C 5 M 6 6 4 J is a 1.048.576 bit high speed C M O S static random acce ss m em ory organized as 6 5 ,5 3 6 w o rd s by 16 bits and operated trorn a single 5V supply. Toshiba's advanced C M O S tech nolog y and circuit design enable high speed operation.

T5N630 ABB

Abstract: bs 1600 pir sensor T5N630 1SDA054396R1 1SDA05 magnetic Contactor abb a9-30-10 ABB 145 PM 40-20 Breaker T5N400 ABB 1SDA054404R1 S202MC6
Contextual Info: Low Voltage Equipment Innovative Products for the Electrical Contractor - April 2006 Contractor Products Welcome The 5th Edition 1 Welcome to the fifth edition Epack Catalogue which continues to combine a range of products from ABB specially selected for the electrical contractor.

ADBZ25S0L2

Abstract: K707 DCMZ37SNA197 DAMZ15SNA197 ADAZ15SOL2 DBMZ25SNA197 DCMV37PNK87 ADDZ50SOL2 DAMZ15PNK87 adez9s0l2
Contextual Info: Straight D AD* and D*M Perform ance and M ate rial S p ecifications MATERIALS AND FINISHES MECHANICAL FEATURES PERFORMANCE SPECIFICATIONS Shell Steel, Tin Plated Coupling Friction and lock accessories Temperature Range - 5 5 'C to 1 0 5 X Insulator Glass Filled Thermoplastic, UL 94V-0

Contextual Info: Al * & D*M Straight D Performance and Material Specifications MATERIALS AND FINISHES MECHANICAL FEATURES PERFORMANCE SPECIFICATIONS Shell Steel, Tin Plated Coupling Friction and lock accessories Temperature Range Insulator Glass Filled Thermoplastic, U l 94V-0

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: 8,192 W O R D X 8 B IT CM O S STA TIC R A M DESCRIPTIO N The TC5588P/J is a 65,536 bits high speed static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit from provides high speed feature.

Contextual Info: I N T E G R A T E D DEVIC E 47E D • 4Ö25771 GQIDOTQ b ■ IDT IDT7MP4036 64K x 32 BiCMOS/CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High density 2 megabit static RAM module • Low profile 64 pin ZIP Zig-zag In-line vertical Package or 64 pin SIMM (Single In-line Memory Module)

Contextual Info: High Reliability, Military D Subminiature Solder Cup Crimp See page 276 (See page 277) Printed Circuit Contact Arrangements_ Face View Pin Insert 78 9 iO 1 ’ 20 21 71 23 24 25 Shell Size Contact Arrangement Contact Size

C55A

Abstract: pd4311c NEC 20PIN DIP
Contextual Info: NEC //PD4311 1 6 ,3 8 4 x 1-BIT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configuration The //PD4311 is a 16,384-word by 1-bit static random acce ss m em ory fabricated with advanced silicon-gate technology. Its unique circuitry, u sin g C M O S peri­

escc 3401 026

Abstract: 340100501B esa scc 3401 005 26SNMB-FR022-F0 340100201B 340100507B
Contextual Info: DSubminiature Space Connectors General High performance D Subminiature connectors, ESA or MIL qualified, for space applications. Space/High reliability D*M and D*MA connectors meet stringent tests for outgassing and residual magnetism and are suitable for use in space, medical, and high

Contextual Info: FILTERED " D " C O N N EC TO R S LOW CO ST C U B N 0 9 & 2 5 SERIES DIMENSIONS: in. mm PIN SO C K E T RIGHT ANGLE (STANDARD) RIGHT ANGLE (NORTH AMERICAN FOOTPRINT) RIGHT ANGLE (STANDARD) ♦CUBM25SG *C UB M 25PG RIGHT ANGLE (NORTH AMERICAN FOOTPRINT) CUB M 25PN

Contextual Info: MITSUBISHI LSIs N » N *V M * . !. 1\C H<’’' nata"'«'"11 c,0ftie Pá 5 M 5 1 0 0 4 C J - 1 2 ,- 1 5 ,- 2 0 1048576-BIT 262144-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 51004C J are a fa m ily o f 2 62 144-w ord by 4 -b it static PIN CONFIGURATION (TOP VIEW)

star delta FORWARD REVERSE STARTER

Abstract: BS88-6 gec switchgear 100AXTN2 automatic star delta starter using timer BS5419 100KXTNC2F IEC 60269 SIBA wiring diagram for single phase dol motor starter HRC fuse gg GEC
Contextual Info: MEMா Enclosed Switchgear and Motor Control • Fuse-switch-disconnectors & switch disconnectors • Enclosed busbar chambers • HRC distribution fuseboards & fuses Designed with the needs of the installer and building owner in mind • Load break switches