25P03 Search Results

25P04Q

Contextual Info: SCHOTTKY BARRIER DIODE C 25P03Q C 25 P04Q 2 7 .7 A / 3 0 ~ 4 0 V FEATURES °Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 20 Volts thru 100 Volts Types Available

25P03L

Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G
Contextual Info: 25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: AN569 NTD25P03L NTD25P03L1 NTD25P03LT4
Contextual Info: 25P03LT4 Advance Information Power MOSFET 25 Amps, 30 Volts, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast

Contextual Info: 25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

STD25P03LT4G

Abstract: dpak mosfet 25p03lg STD25P03L NTD25P03
Contextual Info: 25P03L, 25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P 03L

Abstract: 25P03L NTD25P03LG
Contextual Info: 25P03L Power MOSFET −25 A, −30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: 369D AN569 NTD25P03L NTD25P03L1 NTD25P03LG NTD25P03LT4 25P 03L
Contextual Info: 25P03L Power MOSFET −25 A, −30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25p04

Abstract: 25P05
Contextual Info: 25P03C THRU SF25P05C Glass Passivated Super Fast Recovery Rectifier YENYO Voltage Range 200 to 400 V Current 25.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current

25P03L

Abstract: 369D AN569 NTD25P03L NTD25P03L1 NTD25P03LT4 25p03
Contextual Info: 25P03L Power MOSFET 25 A, 30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25p03lg

Abstract: 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size
Contextual Info: 25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast