Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    25P DIODE Search Results

    25P DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    25P DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    25p05

    Abstract: 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189
    Contextual Info: M O T OR OL A SC X S T R S /R IM E 0 I F MOTOROLA b3fc>7554 O G flT llS b | -r-3 • I SEM ICONDUCTOR TECHNICAL DATA M T H 25P 05 M T H 25P 06 M TM 25P05 M TM 25P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate T M O S


    OCR Scan     		25P05 25P06 25P06 Motorola 3-351 MOSFET S 1550 N motorola diode 739 SC189 PDF

    Contextual Info: 1N3847 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.50m Total Cap. (F)25p Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium


    Original     		1N3847 Ipeak510m StyleDO-25var PDF

    Contextual Info: 1N3717 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium


    Original     		1N3717 Vp65m Vv355m Ipeak510m StyleDO-17 PDF

    Contextual Info: CKV2020-49 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio1.8 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StyleChip


    Original     		CKV2020-49 Voltage15 PDF

    Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance


    Original     		PSMN004-25B, PSMN004-25P PSMN004-25P O220AB) PSMN004-25B OT404 PDF

    Contextual Info: 1N2969 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.2m Peak Curr. Tol.20m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq2.5G Series Induct. (H)4.0n R(series) (Ohms)1.0 Neg Resist.62 Semiconductor MaterialGermanium


    Original     		1N2969 Vp65m Vv350m Ipeak500m StyleTO-18 PDF

    Contextual Info: DKV6534-18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StyleAxial


    Original     		DKV6534-18 Voltage22 PDF

    Contextual Info: PH1227-3 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.15G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		PH1227-3 Voltage24 PDF

    Contextual Info: PL0137-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		PL0137-2 PDF

    Contextual Info: PH1217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		PH1217-2 Voltage15 PDF

    Contextual Info: PL0147-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		PL0147-2 PDF

    Contextual Info: PL0157-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		PL0157-2 PDF

    Contextual Info: D4217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS


    Original     		D4217-2 Voltage15 PDF

    PSMN004-25

    Abstract: SOT404 channel p PSMN004-25B PSMN004-25P
    Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance


    Original     		PSMN004-25B, PSMN004-25P PSMN004-25P O220AB) PSMN004-25B OT404 PSMN004-25 SOT404 channel p PDF

    Contextual Info: MA4950B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage240 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)35 Semiconductor MaterialSilicon Package StyleStR-10 Mounting StyleT


    Original     		MA4950B Voltage240 StyleStR-10 PDF

    Contextual Info: PL0107-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		PL0107-2 PDF

    Contextual Info: PL0127-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		PL0127-2 PDF

    Contextual Info: D4817-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)4.5 Semiconductor MaterialSilicon Package StyleFuse Mounting StyleT


    Original     		D4817-2 Voltage15 PDF

    Contextual Info: D4837-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)4.5 Semiconductor MaterialSilicon Package StyleFuse Mounting StyleT


    Original     		D4837-2 Voltage30 PDF

    Contextual Info: D4667-3 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.5.0G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C Mounting StyleS


    Original     		D4667-3 Voltage90 PDF

    PSMN004-25B

    Abstract: PSMN004-25P
    Contextual Info: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance


    Original     		PSMN004-25B, PSMN004-25P PSMN004-25P O220AB) PSMN004-25B OT404 PDF

    Contextual Info: DKV3802-51 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio4.9 V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StylePill-B


    Original     		DKV3802-51 Voltage22 PDF

    Contextual Info: DKV3802-49 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio1.8 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)200m Semiconductor MaterialSilicon Package StylePill-B


    Original     		DKV3802-49 Voltage15 PDF

    Contextual Info: MA4950A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage240 Q Factor Min. f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)35 Semiconductor MaterialSilicon Package StyleStR-10 Mounting StyleT


    Original     		MA4950A Voltage240 StyleStR-10 PDF