25P 03L Search Results

25P 03L

Abstract: 25P03L NTD25P03LG
Contextual Info: NTD25P03L Power MOSFET −25 A, −30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

Contextual Info: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: 369D AN569 NTD25P03L NTD25P03L1 NTD25P03LG NTD25P03LT4 25P 03L
Contextual Info: NTD25P03L Power MOSFET −25 A, −30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: 25p03lg 03lg 369D AN569 NTD25P03L NTD25P03L1 NTD25P03L1G NTD25P03LG NTD25P03LT4G
Contextual Info: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25p03lg

Abstract: 03LG NTD25P03LT4G 25p03l NTD25P03LG 03LG Power MOSFET DPak Package size
Contextual Info: NTD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

STD25P03LT4G

Abstract: dpak mosfet 25p03lg STD25P03L NTD25P03
Contextual Info: NTD25P03L, STD25P03L Power MOSFET −25 Amp, −30 Volt Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

25P03L

Abstract: 369D AN569 NTD25P03L NTD25P03L1 NTD25P03LT4 25p03
Contextual Info: NTD25P03L Power MOSFET 25 A, 30 V, Logic Level P−Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

684J

Abstract: ms16224 M83446/04 183j 226 35K M83446/08 R 226 35k 029 MS 75084 ms16225 19f 104j
Contextual Info: PREVIOUS CURRENT PREVIOUS CURRENT PREVIOUS a ic hn CURRENT c Te MIL STANDARD to Delevan Conversion Chart PREVIOUS CURRENT l N TA RD -24 -25 -26 -27 -28 -29 -30 -31 -32 -33 -34 -35 -36 -37 -38 -39 -40 -41 -42 -43 -44 -45 -46 -47 -48 -49 375 376 377 378 379

25P03L

Abstract: AN569 NTD25P03L NTD25P03L1 NTD25P03LT4
Contextual Info: NTD25P03LT4 Advance Information Power MOSFET 25 Amps, 30 Volts, Logic Level P-Channel DPAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast

atf22v

Contextual Info: Features • Industry Standard Architecture - Low-cost Easy-to-use Software Tools • High-speed, Electrically-erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-pin Delay • Several Power Saving Options Device lcc, Standby lcc, Active A T F22V 10B

75G4

Contextual Info: CYPRESS F e a tu re s • W indowed for reprogram m ability • C M O S for optim um speed/pow er • H igh speed — 25 ns m ilitary Low power — 660 mW (com m ercial and m ilitary) • 2K X 8 Reprogrammable PROM • D irect replacem ent for b ipolar PR O M s

7C245A

Abstract: CY7C245A
Contextual Info: CY7C245A V CYPRESS Features • 5V ± 10% Vcc? com m ercial and m ilitary • T T L -com patible I/O • D irect replacem ent for b ipolar PR O M s • C apable o f w ith stan d in g greater than 2001V static d isch arge • W indowed for reprogram m ability

Glenair 06324

Abstract: 06324 Glenair 407 as 048 Glenair arinc 600 620 mt 1389 FE USB CONNECTOR QQB575R QQB575R36T125 Glenair micro mt 1389 fe 240-033-2-25PSCDP 33E12
Contextual Info: EMI/EMP Filter Connectors High-Reliability Military Standard and Commercial Connectors for EMI Suppression United States  United Kingdom  Germany  France  Nordic  Italy 2nd Edition • September 2008  Spain  Japan 1000 Hour Grey TM The Advanced Formula

PT1000 CONVERSION TABLE

Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Contextual Info: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680

tm 48f 038 transformer

Abstract: 2j 103k 51f smd
Contextual Info: Custom Solutions & Manufacturing Excellence From the day our company opened for business in 1947, our continuous growth as a U.S. manufacturer has been a great source of pride. We have accomplished this, in part, by providing custom solutions for your challenging circuit designs. Our products are