25OCA Search Results

marking A07

Abstract: BAS116
Contextual Info: BAS116 0.225mW Surface Mount Switching Diode Pb RoHS SOT-23 COMPLIANCE Features — — — Low leakage current applications Medium speed witching times Marking: JV Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified.

BZX85C

Contextual Info: Preliminary BZX85C SERIES 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features — — — Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix

Contextual Info: BAT42WS/BAT43WS Pb 0.2W Surface Mount Flat Lead Fast Switching Schottky Barrier Diode RoHS COMPLIANCE SOD-323F Features — — — — — — — — Low forward voltage drop Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1

RS606

Abstract: DATA SHEET rs607 RS601 RS602 RS603 RS604 RS605 RS607
Contextual Info: RS601 THRU RS607 SINGLE – PHASE BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 6.0 Amperes RS-6 Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Plastic material has Underwriters Laboratory Flammability

surge 105

Abstract: MBRF5100
Contextual Info: MBRF5100 - MBRF5200 Pb RoHS Isolation 5.0 AMPS. Schottky Barrier Rectifiers ITO-220AC COMPLIANCE Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction

Contextual Info: BAV100/101/102/103 500mW.Hermetically Sealed Glass High Voltage Switching Dides MINI MELF Features — — — — — — — — — High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction

15822

Abstract: low barrier schottky
Contextual Info: BAS85 Silicon Schottky Barrier Diode MINI MELF Features — For general applications — Low turn-on voltage — PN junction guard ring Mechanical Data Dimension in millimeters — Glass case — Weight: 0.05g approx Maximum Ratings and Electrical Characteristics

BZX85C

Abstract: BZX85C12 BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1
Contextual Info: BZX85C3V3 - BZX85C 5 6 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features — — — — — — — — — — Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix

202E

Contextual Info: 1A1 THRU 1A7 SILICON RECTIFIERS Voltage Range – 50 to 1000 Volts Current – 1.0 Amperes Features • High reliability • Low leakage • Low forward voltage drop • High current capability Mechanical Data • Case: Molded plastic black body • Lead: MIL-STD 202E method 208C guaranteed.

Contextual Info: BAV100/101/102/103 500mW Hermetically Sealed Glass High Voltage Switching Diodes Pb RoHS MINI MELF COMPLIANCE Features ­ ­ ­ ­ ­ ­ ­ ­ ­ High Voltage Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction

202E

Abstract: 1a5s
Contextual Info: 1A1S THRU 1A7S SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • • • • High reliability Low leakage Low forward voltage drop High current capability Mechanical Data • Case: Molded plastic black body

Contextual Info: PRELIMINARY SSRAM AS5SS128K32 128K x 32 4Mb Synchronous Flow-Through Static Ram FEATURES GENERAL DESCRIPTION • Available in Mil-Temp*, Enhanced & Industrial Ranges • Clock frequency up to 117MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: BAV19WS/BAV20WS/BAV21WS Pb RoHS COMPLIANCE 0.2W Surface Mount Flat Lead High Voltage Switching Diode SOD-323F Features — — — — — — — Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1 Clip bonding construction, good thermal

diode RGP 20

Abstract: diode RGP 10j diode RGP 202E RGP10A RGP10M
Contextual Info: RGP10A THRU RGP10M FAST RECOVERY PLASTIC RECTIFIERS SINTERED GLASS JUNCTION Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • High temperature metallurgically bonded construction Sintered glass cavity free junction. • Capability of meeting environmental standard of

"clip bonding"

Abstract: BAT42WS BAT43WS IRV500
Contextual Info: BAT42WS/BAT43WS Pb 0.2W Surface Mount Flat Lead Fast Switching Schottky Barrier Diode RoHS COMPLIANCE SOD-323F Features — — — — — — — — Low forward voltage drop Flat Lead SOD-323F small outline plastic package Surface device type mounting Moisture sensitivity level 1

MELF Package

Abstract: LL4448
Contextual Info: LL4448 500mW Hermetically Sealed Glass Fast Switching Diodes Pb RoHS MINI MELF COMPLIANCE Features — — — — — — Fast Switching Device Mini Melf package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surface are corrosion

Contextual Info: SS13M/SS14M/SS16M Pb RoHS 1.0Amp Surface Mount Schottky Barrier Rectifier COMPLIANCE MicroSMA Features — — — — — Very low profile typical height of 0.60mm Ideal for automated placement Low forward voltage drop, low power losses, high efficiency. Meets MSL level 1, per J-STD-020C, lead free

BAT42

Abstract: BAT43
Contextual Info: BAT42 / BAT43 Pb RoHS COMPLIANCE 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode DO-35 Features — — — — — — — — Low forward voltage drop DO-35 package JEDEC Through-hole device type mounting Hermetically sealed glass Compression bonded construction

marking a6

Abstract: bas16 a6 marking A07 BAS16
Contextual Info: BAS16 Surface Mount Switching Diode Pb RoHS SOT-23 COMPLIANCE Features — — — — Fast switching speed For general purpose switching applications High conductance Marking: A6 Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics

W005M

Abstract: W01M W02M W04M W06M W08M W10M
Contextual Info: W005M THRU W10M 1.5A SINGLE-PHASE SILICON BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.5 Amperes Features • Surge overload rating – 50 amperes peak • Ideal for printed circuit boards • Reliable low cost construction utilizing molded

Contextual Info: BAT42 / BAT43 Pb RoHS COMPLIANCE 200 mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diode DO-35 Features ­ ­ ­ ­ ­ ­ ­ ­ Low forward voltage drop DO-35 package JEDEC Through-hole device type mounting Hermetically sealed glass Compression bonded construction

AS5LC512K16

Contextual Info: PRELIMINARY SRAM AS5LC512K16 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY PIN CONFIGURATIONS 44-pin TSOPII DGC & DGCR FEATURES • High-speed access time: 10, 15 & 20ns • Available in Mil-Temp*, Enhanced & Industrial Ranges • High-performance, low-power CMOS process

202E

Contextual Info: 1A1S THRU 1A7S SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Amperes Features • • • • High reliability Low leakage Low forward voltage drop High current capability Mechanical Data • Case: Molded plastic black body

JESD22-B102D

Abstract: J-STD-002B JESD22-B102
Contextual Info: SSL13M Pb RoHS 1.0Amp Surface Mount Schottky Barrier Rectifier COMPLIANCE MicroSMA Features — — — — — Very low profile typical height of 0.60mm Ideal for automated placement Low forward voltage drop, low power losses, high efficiency. Meets MSL level 1, per J-STD-020C, lead free