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| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard |
Original |
aod484aod484lo-252 | |
BCT25245Contextual Info: SN54BCT25245, SN74BCT25245 25-Ω OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS053B – MAY 1990 – REVISED APRIL 1994 • • • • • SN54BCT25245 . . . JT OR W PACKAGE SN74BCT25245 . . . DW OR NT PACKAGE TOP VIEW State-of-the-Art BiCMOS Design |
Original |
sn54bct25245sn74bct25245scbs053bmil-std-883c+5 | |
AOD484Contextual Info: AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
Original |
aod484aod484lo-252 | |
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Contextual Info: AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD484/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. AOD484 |
Original |
aod484aod484/laod484l-aod484l+1 |